T3329 Search Results

2SD683A

Abstract: 2SD683
Contextual Info: TOSHIBA íDISCRETE/OPTO} 9097250 TOSHIBA Tb CD IS C R E T E / OPT O dT I t OITESO 0D077SD ^ 2SD683 .2SD683A, SILICON NPN TR IP LE DIFFUSED TYPE _ DARLINGTON POWER)_ INDUSTRIAL APPLICATIONS Unit in mm HIGH VOLTAGE AND HIGH POWER SWITCHING APPLICATIONS.

c2689

Abstract: C2689 equivalent automotive ignition tip162 T1P160 equivalent to tip162
Contextual Info: TEXAS INSTR ÌOPTO> d ìT | 8961 72 6 TEXAS INSTR OPTO 003^.^30 62C 36938 TIPI 60, TIPI 61, TIPI 62 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V ISE D O C T O B E R 1 9 84 50 W at 100°C Case Temperature T-33-29 10 A Rated Continuous Collector Current

2sd1087

Contextual Info: 5b ^ M r m í ^ E TE/0PT<>} 2SD1087 9097250 TOSHIBA <DISCRETE/OPTO DE I TCH7E5G ^ 56C 07 859 D T-33-29 SILICON NPN TRIPLE DIFFUSED TYPE _ DARLINGTON POWER)_ INDUSTRIAL APPLICATIONS •- • Unit in tnm 3 4.3 MAX HIGH CURRENT SUITCHItlG APPLICATIONS.

Contextual Info: TOSHIBA It { D I S C R E T E / OPTO} de T| TOT^SSO □007747 1 5òC 0 7 747 DISCRETE/OPTO T-33-29 SILICON NPN TRIPLE DIFFUSED TYPE _ (DARLINGTON POWER) U n it in mm HIGH POWER SWITCHING APPLICATIONS. FEA TU R ES: • High DC Current Gain : hFE=2000(Min.)(VCE=3V, IC=3A)

A04A ic

Abstract: FE600 600V NPN 2A 2sd684a D1.5B IGNITER
Contextual Info: ~5b TOSHIBA {DISCRETE/OPTO} Î Ë 1 SOTTESO 0D077S3 4 : 56C 077 S’3 9097250 TOSHIBA DISCRETE/OPTO 0r T-33-29 SILICON NPN TRIPLE DIFFUSED TYPE _ (DARLINGTON POWER) INDUSTRIAL A P P L I C A T I ^ in IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS.

DOO1

Abstract: 2SB997 2SB998 2SB999 2SD1357 2SD1358 2SD1359
Contextual Info: TOSHIBA D eT J S O T T E S O {DISCRETE/OPTO> O O C m a b SILICON NPN TRIPLE DIFFUSED TYPE _ DARLINGTON POWER . r.-~ 9097250 TOSHIBA 56C CD ISCR ETE/O PTO ) T-33-29 0792ó INDUSTRIAL APPLICATIONS ' Unit in mm HIGH POWER SWITCHING APPLICATIONS. • '

3067

Abstract: BD677A BD679A BD675A BD676A BD678A BD680A
Contextual Info: P h ilip s S e m icon d u ctors Prelim inary sp ecification Silicon Darlington power transistors PHILIPS INTERNATIONAL D ESCRIPTION 711002b 004BT7S bBl WÊ PHIN r -3 3 -z * f Q U IC K R E F E R E N C E DATA NPN epitaxial base transistors in a monolithic Darlington circuit in a

LB 124 transistor

Abstract: LB 124 d MPQ6427 transistor BC 236 16-SOIC 2N6427 MMBT6427
Contextual Info: 2N6427/MMBT6427/MPQ6427 NATL SEMICOND OISCRETE 11E: D | k 501130 T-33-21 5 ^ N a tio n a l J l A S e m ic o n d u c to r 2N6427 E llllll Ull MMBT6427 MPQ6427* TO “ 236 S O T - 23 T O -9 2 ^ | C =E 10-116 TL/G/10100-7 TL/Q/10100-5 Bc TUG/10100-1 NPN Darlington Transistor

Contextual Info: TOSHIBA {DIS CR ET E/ OPT O} 9097250 TOSHIBA Sb DIS CR E TE /O PT O Î>Ë~| ACHTESD DDG7ñbE T J 5 òC T-33-29 07862 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) _ INUÜbTKiAL APPLICATIONS IG N IT E R A P P L IC A T IO N S . Unit in mm

BUT35

Abstract: transistors but35 CM4050
Contextual Info: MOTO RO LA SC XSTRS/R F 12E D | b3L75S4 00840130 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 40 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 2 5 0 WATTS

WESTINGHOUSE DIODE

Abstract: WT600 westinghouse transistors WT635-01D westcode sw Westcode T-635
Contextual Info: 9709955 dESTCODE W ESTCODE S EM IC O N D U C TO R S _ 3 4 C T SEMICONDUCTORS m De J 01741 TTD'^ SS _D' T - 33-29 D0D1741 Technical WESTCODE SEMICONDUCTORS Publication WT600 Issue 1 December 1980 Discrete Power Darlington Transistor Types WT635-01 & WT635-02

transistor BD 677

Abstract: BD 675 BD675 677d
Contextual Info: ES C T> m ÔEBSbOS 00043^5 b H S I E 6 NPN Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF Î5C °*395 T-33-29 ~ BD 675 BD 677 D BD 679 Epibase power darlington transistors 40 W BD 675, BD 677, and BD 679 are monolithic NPN silicon epibase power darlington

Contextual Info: 7^2^237 GG2R1S1 ö • V'33'Z^ SCS-THOMSON SGSD00055 IM 3DE D S G S-THOMSON HIGH VOLTAGE FAST SWITCHING NPN DARLINGTON ADVANCE DATA ■ ■ ■ ■ HIGH VOLTAGE HIGH GAIN FAST SWITCHING GOOD RBSOA IN TERN AL SC H EM A TIC DIAGRAM D ESCRIPTIO N The SGSD00055 is a silicon multiepitaxial planar

Contextual Info: • TqgqSB? D056M57 5 ■ " T '3 3>-Z.°\ f Z T SGS-THOMSON BDX33/33A/33B/33C ^ 7 # MÛi [i[Li©ir[B ô [MQ©S BDX34/34A/34B/34C 3GE D S G S-THOMSON HIGH GAIN GENERAL PURPOSE DESC RIPTIO N The BDX33, BDX33A, BDX33B and BDX33C are silicon epitaxial-base NPN transistors in monolithic

mj4030

Contextual Info: 7 ^ 5 3 7 QQgqob? a m 3 3 - 2P\ SCS-THOMSON H MJ4030/112 MJ4033/4/5 i S G S- TH O MS O N 3GE D GENERAL PURPOSE DESCRIPTION The MJ4030/31/32/33/34/35 are medium-power si­ licon NPN Darlington in Jedec TO-3 metal case, in­ tended for use in general purpose and amplifier ap­

Contextual Info: 7=12=1237 002^201 T • T -3»3 -Z P \ SGS-THOMSON poæiItLgOTiMOi TIP140T/141T/142T TIP145T/146T/147T S 6 S-TH0MS0N 3DE » LOW VOLTAGE HIGH CURRENT POWER DARLINGTON ADVANCE DATA ■ MONOLITHIC DARLINGTON CONFIGURA­ TION ■ LOW VOLTAGE « HIGH CURRENT ■ HIGH GAIN

silicon power 2GB

Abstract: DG432
Contextual Info: BDT63F; BDT63AF ^DTBSBF; BDT63CF 1 PHILIPS INTERNATIONAL SbE D • 7 1 1 0 0 2 b Q 0 4 3 2 b b «îM *1 H P H I N T -3 3 -2 ^ SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a SOT186 envelope with an electrically insulated mounting

sc 6038

Abstract: N6039 2N603 LT 7706 Motorola Mc 1461 to225aa 2N 6036 2N6037
Contextual Info: MOTOROLA •SC XSTRS/R F 15E D I t3b75SM OOflMSflO Ì | T~33 ü j 2N602Ô thru MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP NPN 2N6034 2N6035 2N6036 2N6037 2N6038 2N6039 PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 4-AMPERE . . . designed for general-purpose amplifier and low-speed switching

transistor 1BT

Abstract: BDT62C PHILIPS npn 1bt BDT63B
Contextual Info: BDT63; 63A BDT63B; 63C _ PHILIPS "INTERNATIONAL" StEB A • v _ 7110flEb 0043551, TTT - PHIN T - J J - Z 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general

bdt65b

Contextual Info: BDT65; 65A BDT65B; 65C V PHILIPS INTERNATIONAL SbE D • 7 1 I G Ö 5 L □ □ 4 3 2 ‘ia Ibfl « P H I N SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general purpose am plifier and switching applications. T 0-2 2 0 plastic envelope. PNP complements are

transistor kt 801

Abstract: S/transistor kt 801 KT 802 transistor a05 801
Contextual Info: SAMSUNG S E MI CONDUCTOR INC MJE800/801/802/803 IME O | 7^4145 000770b NPN EPITAXIAL r - 33 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hpE—750 @ lc= —1.5 and -2 .0 A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complementary to MJE700/701/702/703

Contextual Info: BEE D • flEBbBBG 0G17203 *\ «SIP NPN Silicon Darlington Transistors P ZTA 13; P Z TA 14 “ SIEMENS/ SPCL-i SEMICONDS • • • • For general A F applications High collector current High current gain Complementary types: PZ TA 63 / 64 PNP Type M arking

D40C2

Contextual Info: CENTRAL SEMICONDUCTOR fc,l D | nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE -6 5 °to + 1 5 0 °C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C

BUT35

Abstract: THT bsc 25 transistors but35 ASX 12 D transistor CM4050
Contextual Info: MO T O R O L A SC XST RS /R 12E D I b3b75S4 DDaMflbfl T | F MOTOROLA SEM ICON DUCTOR TECHNICAL DATA 40 AMPERES NPN SILICON POW ER DARLINGTON TRAN SISTO RS SW ITCHM ODE SER IES NPN SILICON POW ER DARLINGTON TRAN SISTO RS WITH BASE-EM ITTER SPEEDU P DIODE 1000 VOLTS