DOO1 Search Results

Contextual Info: intJ. 2-MBIT 128K x 16, 256K x 8 LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 28F200BL-T/B, 28F002BL-T/B m Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.0V-3.6 V • Automatic Power Savings Feature — 0.8 mA Typical Ice Active Current in

Contextual Info: !» GEC P L E S S E Y S e p te m b e r 1995 PRELIMINARY INFORMATION SEMICONDUCTORS DS3112-2.0 P1480 LAN CAM 1kx64-BIT CMOS CONTENT-ADDRESSABLE MEMORY S u p e rs e d e s F e b ru a ry 1 9 9 2 ed itio n The P1480 LAN CAM is a 1K X 64-bit fixed-widlh CMOS Content-addressable Memory (CAM aimed at address

Contextual Info: w t GEC P LESS EY S I M I C O N I I I O K S P1480 LAN CAM 1KX64-BIT CMOS CONTENT-ADDRESSABLE MEMORY (SUPERSEDES SEPTEMBER 1993 EDITIO N The P1480 LAN CAM is a 1K X 64-bit fixed-width CMOS Content-addressable Memory (CAM) aimed at address filtering applications in Local-area Network (LAN) bridges

DLS FT 031

Abstract: fa 5571 44PIN DL10 SM5837AF SICK
Contextual Info: fc T HH o a 3 •^f-t ¿ v$ 4 B? rx si ä mí 4d £ Ota M; 1 ~r a w rr\ 4^ g A “if k . 3| V m e> <i *0 U1 v' H \Ji H A r fX u M» V v. ~7* I /• ~r Ml I EE V. V CJ1 >- > to EEm H \ < oo la % <' Ml Ml □ìli 4 ~\ Moto m V g V Ml Ä I X HS i s *21 SS » V Ml

Contextual Info: OKI Sem iconductor MSM5416273 P relim inary 262,144 -Word x 16 Bits Multiport DRAM_ Rev.t.o GENERAL DESCRIPTION* The MSM5416273 is a 4-Mbit CMOS m ultiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-words by 16-bits SAM. Its RAM and SAM operate independently and

A15A

Abstract: A15B EDI8L21664V MO-151 TMS320C54X 9704
Contextual Info: ^EDI EDI8L21664V M ELECTRONIC DESIGNS. INC 2x64Kx16SRAM TMS320C54X External SRAM Memory Solution Features The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM DSP Memory Solution constructed w ith two 64Kx16 die mounted on a m ulti­ • Texas Instruments TMS320C54x

Contextual Info: " H Y U H D A I — • HYM5V64404C K-Series Unbuffered 4Mx64 bit EDO DRAM MODULE based on 4Mx4 DRAM, 3.3V, 4K-Refresh GENERAL DESCRIPTION The HYM5V64404C K-Series is a 4Mx64-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY51V16404C in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy

Contextual Info: E2L0036-17-Y1 O K I Semiconductor P revious version: Dec. 1996 MSM548332 278,400-Word x 12-Bit Field Memory DESCRIPTION The MSM548332 is a 3.3-Mbit, 960 bits x 290 lines, Field Memory. Access is done line by line. The line address m ust be set each time a line is changed.

Contextual Info: Preliminary Technical Data v0.4, July, 1999 HITACHI MDS/R4212A_ 12-channel Optical Interconnect Modules Preliminary Product Disclaimer This preliminary data sheet is provided to assist you in the evaluation of functional samples of

TE28F160B3B120

Abstract: 29058
Contextual Info: intei PRELIMINARY SMART 3 ADVANCED BOOT BLOCK 4-MBIT, 8-MBIT, 16-MBIT FLASH MEMORY FAMILY 28F400B3, 28F800B3, 28F160B3 • Flexible SmartVoltage Technology — 2.7V-3.6V Program/Erase — 2.7V-3.6V Read Operation — 12V V pp Fast Programming ■ 2.7V or 1.8V I/O Option

Contextual Info: “HYUNDAI HY514370B JSeries 256K X 16-blt CMOS ORAM with 2 WE & WPB PRELIMINARY DESCRIPTION The HY514370B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access

Contextual Info: •an ‘AHlSnaN I S0IN0H10313 N O U V I A V NVdVP 9SE00LPS I CA3U ‘EOOZ O) IHOIHAdOO 33dd •AdViaiddOdd -Aia H0103NNOO 3VP ( 1 H0 I3M)¥1 •QddV ( ’ON ONIMVaa)^-#MH CO 'QddV 0 0 2 Id-L N - 0 9 d A - d * - d M • a n ‘A H i s n a N i S0IN0dl0313

SIR312P

Abstract: SIR312 3000W with PCB SIR222 250V 30A PCB RELAY SIF312 24V 5A VDE RELAY SIR222P SEV 1011 socket 16a 16a gg
Contextual Info: 6*5= 6DIHW\ ZLWKRXWFRPSURPLVH 5HOD\GDWD *HQHUDOGDWD 'LDJUDPPHV  3&%UHOD\ZLWKIRUFLEO\JXLGHGFRQWDFWV  3URWHFWLYHVHSDUDWLRQEHWZHHQFRLODQG FRQWDFWV OHDNDJHDQGFUHHSLQJGLVWDQFHV !PP SURWHFWLYHVHSDUDWLRQGLDJRQDOO\ EHWZHHQOHIWDQGULJKWFRQWDFWVLGH OHDNDJH

JEDECMO-151

Abstract: A15B
Contextual Info: ^EDI EDI8L21664V h ELECTRONIC DESIGNS, INC 2xS4Kx1SSRAM TMS320C54X External SRAM Memory Solution Features The E D I8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM DSP Memory Solution constructed w ith tw o 64Kx16 die mounted on a m ulti­ • Texas Instruments TMS320C54x

Contextual Info: 0 M F (f3 [M Æ n r0 ® K ] in te i A28F200BX-T/B 2-MBIT (128K x 16,256K x 8 BOOT BLOCK FLASH MEMORY FAMILY Automotive x8/x16 Input/Output Architecture — A28F200BX-T, A28F200BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs Optimized High Density Blocked

Contextual Info: E2L0037-17-Y1 O K I Semiconductor Previous version: Dec. 1996 M S M 548331 222,720-Word x 12-Bit Field Memory DESCRIPTION The MSM548331 is a 2.7-Mbit, 768 bits x 290 lines, Field Memory. Access is done line by line. The line address m ust be set each time a line is changed.

Contextual Info: P1480 LAN CAM CHAPTER 1 INTRODUCTION 1.1 GENERAL DESCRIPTION The P1480 LAN CAM is a 1K x 64-bit Content-addressable Memory CAM which is targeted at address filtering applications in Local Area Network (LAN) Bridges. Although some of the aspects of this device are tuned specifically to

Contextual Info: O K I Semiconductor MSM548331 222,720-W ord x 12-Bit Field M em ory DESCRIPTION The MSM548331 is a 2.7-Mbit, 768bits x 290lines, Field Memory. Access is done line by line. The line address must be set each time a line is changed. More than two MSM548331s can be cascaded directly without any delay devices between them.

CO2P

Abstract: Hitachi DSA0092 PDF00002 hitachi labeling
Contextual Info: Preliminary Technical Data v0.4, July, 1999 MDS/R4212A 12-channel Optical Interconnect Modules Preliminary Product Disclaimer This preliminary data sheet is provided to assist you in the evaluation of functional samples of the products which are under development and for which reliability testing has not been

D010

Abstract: DIN11 MSM548331 MSM548331TS-K
Contextual Info: E2L0037-17-Y1 O K I Semiconductor P re v io u s version: Dec. 1996 MSM548331 ~ 222,720-Word x 12-Bit Field Memory DESCRIPTION The MSM548331 is a 2.7-Mbit, 768 bits x 290 lines, Field Memory. Access is done line by line. The line ad d ress m ust be set each tim e a line is changed.

MSM5416273

Contextual Info: OKI Semiconductor MSM 5 4 1 6 2 7 3 P relim inary 262,144 -Word x 16 Bits Multiport DRAM Rev.t.o GENERAL DESCRIPTION* The MSM5416273 is a 4-Mbit CMOS m ultiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-words by 16-bits SAM. Its RAM and SAM operate independently and

sicet 110

Abstract: D716 d717 id46 11 0741 ami 8121 B121 S332 d715 132121
Contextual Info: SD-39B60-01L 5.00 [.2001 V 0 1 .4 0 I .0 5 5 1 RECOMMENDED PLATED THRU HOLE PATTERN SCALE 2; I N0TE5: MATERIAL* 5EE TABLE r N(-SI-E9,: SEE TABLE PRODUCT SPECIFICATION* NOT REQUIRED PACKAGING: NOT REQUIRED MATE5 WITH* NOf€ "XX* REFERS TO THE QUANTITY OF CIRCUIT POSITIONS.

Contextual Info: GEC PLESSEY S IM I ( \ I) ma3175i Memory Management Unit & Block Protect Unit I: (Advanced data) S10212ADF Issue 1.1 December 1990 Features Block Diagram M A 31751 • Radiation Hard CMOS/SOS Technology CPU B U SSES • User Configurable as Either a Memory

Contextual Info: HYUNDAI H Y 5 1 1 6 8 1 S e r i e s 2M x 8-bit CMOS DRAM with WPB DESCRIPTION The HY5116810 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5116810 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide