silicon power 2GB
Abstract: DG432
Contextual Info: BDT63F; BDT63AF ^DTBSBF; BDT63CF 1 PHILIPS INTERNATIONAL SbE D • 7 1 1 0 0 2 b Q 0 4 3 2 b b «îM *1 H P H I N T -3 3 -2 ^ SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a SOT186 envelope with an electrically insulated mounting
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bdt63fbdt63afbdt63cfot186+4t62bft62cfsilicon power 2gbdg432
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Contextual Info: BDT63F; BDT63AF BDT63BF; BDT63CF SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a S0T186 envelope with an electrically insulated mounting base. The devices are designed fo r audio output stages and general amplifier and switching applications.
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bdt63fbdt63afbdt63bfbdt63cf+5s0t186bdt62fbdt62afbdt62bfbdt62cf
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silicon power 2GB
Abstract: 63BF CT54 BDT63CF D 711 N 60 T D04-3 bdt63b npn BDT63F 63CF BDT62AF
Contextual Info: BDT63F; BDT63AF VBDT63BF; BDT63CF j SbE T> PHILIPS INTERNATIONAL m 711002b 00432bb • PHIN SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a SO T186 envelope w ith an electrically insulated mounting base. The devices are designed fo r audio output stages and general am plifier and switching applications.
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bdt63fbdt63afybdt63bfbdt63cf+130043sbbot186bdt62fbdt62afbdt62bfbdt62cfsilicon power 2gb63bfct54d 711 n 60 td04-3bdt63b npn63cf
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BDT63BF
Abstract: BDT62AF 3SM diode 62AF BDT62BF BDT62CF BDT62F BDT63AF BDT63CF BDT63F
Contextual Info: BDT62F; BDT62AF ^BDT62BF; BDT62CF PHILIPS I N T E R NA TI O NA L SbE D 711DöBb 0 0 4 3 2 4 fl SILICON DARLINGTON POWER TRANSISTORS 23 B T P lTlÑ ” T-33-3/ PNP silicon darlington power transistors in a SOT186 envelope w ith an electrically insulated mounting
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bdt62fbdt62afbdt62bfbdt62cf+10711052k354fit-33-3/ot186bdt63fbdt63afbdt63bf3sm diode62afbdt63cf
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BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
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2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171buv48ibu808dxibd699buv18abd241cfitransistor 2sa1046buw52ibu808dfi equivalentbu724as2sa1046
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BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey
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bs9000d3007he4000b80ribution+10bpw22acm .02m z5u 1kvpin configuration of bfw10la4347b2x84tda3653 equivalenttriac tag 9322hef40106bp equivalentfx4054 coredsq8
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
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sc08btransistor f6 13003equivalent transistor bj 131-6transistor eb 13003 bm+7bb112smd transistor code marking 2f 6na1211 lgcqy58bu705transistor 131-6 bj 026philips om350
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Contextual Info: BDT62F; BDT62AF BDT62BF; BDT62CF SILICON DARLINGTON POWER TRANSISTORS PNP silicon darlington power transistors in a SOT 186 envelope with an electrically insulated mounting base. The devices are designed fo r audio output stages and general amplifier and switching applications.
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bdt62fbdt62afbdt62bfbdt62cf+5bdt63fbdt63afbdt63bfbdt63cf003m70s
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BDT*63CF
Abstract: 721H t63f
Contextual Info: BDT62F; BDT62AF _ ^B D T 6 2 B F ; BDT62CF PHILIPS INTERN AT IO NA L SbE D 711DöEb 0043B4Ö SILICON DARLINGTON POWER TRANSISTORS p'h x n " T -3 3 -3 / PNP silicon darlington power transistors in a SOT 186 envelope with an electrically insulated mounting
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bdt62fbdt62afbdt62cf0043b4+6bdt63bfbdt63cfot186bdt*63cf721ht63f
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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lcd01bgy41bfw10 fet transistorcqy58+7germaniumrx101equivalent components fet bfw10bd643bf199283 to92 600a transistorzener phc
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BDT63BF
Abstract: 63BF BDT*63CF BDT63CF BDT63F 63CF AI mm sot 553 BDT62AF BDT62BF BDT62CF
Contextual Info: BDT63F; BDT63AF I ^BDT63BF; BPT63CF SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a S 0 T 1 8 6 envelope w ith an electrically insulated mounting base. Th e devices are designed fo r audio output stages and general am plifier and switching applications.
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bdt63fbdt63afbdt63bfbdt63cf+9s0t186bdt62fbdt62afbdt62bfbdt62cf63bfbdt*63cf63cfai mm sot 553
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FET BFW10
Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI
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ba220ba221ba223ba281+16ba314ba315ba316ba317ba318ba423fet bfw10kp101afet bfw11bdx38kpz20gcqy58abfw10 fetrpw100b0943of fet bfw11
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