36N60 Search Results

36N60

Abstract: 32N60 IXFN SOT227 fast diode SOT-227 D-68623
Contextual Info: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS on t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK)

Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 36N60P IXFT 36N60P IXFK 36N60P VDSS ID25 RDS on t rr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 600 V = 36 A ≤ 190 mΩ Ω ≤ 250 ns Preliminary Data Sheet Symbol

Contextual Info: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS on t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK)

Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFK 36N60Q IXFX 36N60Q VDSS ID25 = 600 V = 36 A Ω = 165 mΩ Q-CLASS RDS on Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Symbol Test Conditions

Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFH 36N60P IXFK 36N60P IXFT 36N60P VDSS = 600 V ID25 = 36 A Ω RDS on ≤ 190 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C

M 727 36A

Abstract: ISOPLUS247
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFR 36N60P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ

Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFR 36N60P VDSS ID25 = = ≤ ≤ RDS on trr (Electrically Isolated Back Surface) 600 20 200 200 V A Ω mΩ ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C

36N60

Abstract: IXFN36N60
Contextual Info: HiPerFETTM Power MOSFET IXFN 36N60 VDSS 3 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family 2 4 Preliminary data * 1 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 600 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous

36N60P

Abstract: 247 AA
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFH 36N60P IXFK 36N60P IXFT 36N60P VDSS = 600 V ID25 = 36 A Ω RDS on ≤ 190 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C

Contextual Info: HiPerFET Power MOSFETs IXFK / IXFN 32N60 IXFK / IXFN 36N60 V DSS ^D25 600 V 600 V 32 A 36 A D DS on 0.25 Q 0.18 Q N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK

Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs Q-Class IXFN 36N60Q VDSS ID25 RDS on Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr D G Preliminary data sheet Symbol VDSS = 600 V = 36 A Ω = 165 mΩ S Test Conditions

ISOPLUS247

Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 36N60P VDSS ID25 = 600 V = 20 A ≤ 200 mΩ Ω ≤ 250 ns RDS on t rr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Preliminary Data Sheet

32n60

Contextual Info: HiPerFET Power MOSFETs IXFK/IXFN 32N60 IXFK/ IXFN 36N60 Test Conditions T j = 25° C to 150° C 600 600 V VDQR T j = 25° C to 150° C; RGS= 1 Mi2 600 600 V Vos Continuous ±20 120 V vGSM Transient ±30 ±30 V ^D25 T c = 25° C, Chip capability 32N60 36N60

36N60

Abstract: 32N60 D-68623 ld25 sot-223
Contextual Info: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data IXFK/FN 36N60 IXFK/FN 32N60 HiPerFET Power MOSFET D vv DSS ^D25 600V 600V 36A 32A DS on 0.18Q 0.25Q 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions

mosfet 4400

Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
Contextual Info: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,

75N1

Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
Contextual Info: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH

40n80

Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18

ixys ixfn 55n50

Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
Contextual Info: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01

2n60p

Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
Contextual Info: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

IXfk 75 N 50

Abstract: 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30
Contextual Info: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode Type DSS 0 25 DS(on) max. C lss typ. Tc = 25°C New Tc = 25°C n C rss typ. max. qb max. thJC max. D max. pF PF ns nC K/W W IXFH 76N06-11 IXFH 76N06-12 60 76 0.011 0.012 4400

mosfet 4800

Abstract: ixfn27n80 150N10 IXFN44N50 RD5A Co701 4800 power mosfet IXFN36n60 ixfm40n30 ixfm35n30
Contextual Info: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode T jm = 150°C >- New V DSS max. V P ' d 25 Tc = 25°C A DS(on) Tc = 25°C Q typ. C rss typ. max. ° 9 typ. PF pF rts nC C iss p thJC PD max. K/W W 7 >- IXFN 200N06 60 200 0.0055

Contextual Info: HiPerFET TM Power MOSFETs 36N60Q VDSS ID25 Q-CLASS RDS on Single MOSFET Die = 600 V = 36 A Ω = 170 mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C