2SK2715 Search Results

Contextual Info: Transistors Small switching 500V, 2A 2SK2715 •F e a tu re s •E x te rn a l dimensions (Units: mm) 1) Low on-resistance. 2) High-speed switching. 2 3) Wide SOA (safe operating area). 4) Gate-source voltage guaranteed at Vgss = ±30V . o +0.2 0.1 — 0.5±0.1

Contextual Info: Transistors Small switching 500V, 2A 2SK2715 •F e a tu re s 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) G ate-source voltage guaranteed at V gss = ± 3 0 V . •E x te rn a l dimensions (Units: mm) 5) Easily designed drive circuits.

2SK2715

Contextual Info: 2SK2715 Transistors Small switching 500V, 2A 2SK2715 !External dimensions (Units : mm) 6.5±0.2 5.1 +0.2 −0.1 C0.5 9.5±0.5 2.5 1.5 0.65±0.1 0.75 2.3 +0.2 −0.1 0.5±0.1 0.9 5.5 +0.3 −0.1 1.5±0.3 !Features 1) Low on-resistance. 2) Fast switching speed.

UEI 410

Abstract: 2SK2715
Contextual Info: Transistors Small switching 500V, 2A 2SK2715 • Features • E x te rn a l dim ensions (Units: mm) 1 ) Low on-resistance. 2) High-speed switching. 6.5±0.2 5 1+02 r i, f V 3) W ide SOA (safe operating area). 4) G a te -so u rce vo lta g e guara ntee d at Voss = ± 3 0 V .

2SK2715

Abstract: 500V2a parallel mosfet 500v 2A mosfet
Contextual Info: Transistors Switching 500V, 2A 2SK2715 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure

fet N-Channel transistor 250V DS

Contextual Info: Transistors Small switching 500V, 2A 2SK2715 •F e a tu re s 1) Lowon-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) Gate-source voltage guaranteed at Voss = ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel.

2SK2715

Abstract: circuit of electronic toys
Contextual Info: Transistors Switching 500V, 2A 2SK2715 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure

k2715

Abstract: 2SK2715
Contextual Info: 2SK2715 Transistors 10V Drive Nch MOS FET 2SK2715 zExternal dimensions Unit : mm zStructure Silicon N-channel MOSFET CPT3 6.5 5.1 2.3 0.75 0.65 0.9 (1)Gate 2.3 (1) (2)Drain (2) (3) 2.3 0.8Min. 2.5 0.9 1.5 5.5 zFeatures 1) Low on-resistance. 2) Fast switching speed.

2SK2715

Abstract: mosfet low vgs 1A
Contextual Info: IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK2715 Features TO-252 Unit: mm Low on-resistance. Fast switching speed. +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1

Contextual Info: IC MOSFET SMD Type Product specification 2SK2715 Features TO-252 Unit: mm Low on-resistance. Fast switching speed. +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1

k2715

Contextual Info: 2SK2715 Transistors 10V Drive Nch MOS FET 2SK2715 zExternal dimensions Unit : mm zStructure Silicon N-channel MOSFET CPT3 6.5 5.1 2.3 0.75 0.65 0.9 (1)Gate 2.3 (1) (2)Drain (2) (3) 2.3 0.8Min. 2.5 0.9 1.5 5.5 zFeatures 1) Low on-resistance. 2) Fast switching speed.

Contextual Info: Transistors Small switching 200V, 3A 2SK2887 •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) L o w o n -re sista n ce . 2) H ig h -s p e e d s w itc h in g . 3) W id e S O A (safe o p e ra tin g area). 4) G a te -s o u rc e v o lta g e g u a ra n te e d

Contextual Info: Transistors Small switching 200V, 3A 2SK2887 • F e a tu re s ►External dim en sio n s (U n its: m m) 1) Low o n -resistan ce. 2 ) H igh-speed sw itch in g . 3 ) W ide SO A (safe operating a re a ). 4 ) G ate-so u rce vo ltag e guaranteed at V gss = ± 3 0 V .

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

d2396

Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
Contextual Info: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .

rkm 21 transistor

Abstract: RK7002 equivalent 2SK3016 rkm sot-23 rkm transistor sot23 a02 Transistor rkm 45 transistor 2SK2460 rkm 15 transistor RKM SOT
Contextual Info: IN- Transistors n MOS FET 1. Can be used with automatic placement machine. AvarIable In a wade variety o f p a c k a g e s . L i k e b i p o l a r transrstors, taprng versron placement system. IS a l s o available for lines using the automatic 2. MOS FETs operating from 4 volts

2SK2503

Abstract: 2A 500V MOSFET 500v 2A mosfet transistors mosfet 500v 2A 100V 8A N-Channel MOSFET
Contextual Info: Transistors Small switching 60V, 2A 2SK2094 FFeatures 1) Low on-resistance. 2) Fast switchig speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET

2SA2160

Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Contextual Info: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series

TO 252 dimensions

Abstract: 2SK series TO252 TO-252
Contextual Info: N CHANNEL POWER MOSFETS 2SK SERIES • LOW ON RESISTANCE, HIGH SPEED SWITCHING AND A WIDE SAFE OPERATING AREA • IDEAL FOR MOTOR AND SOLENOID CONTROLS AND SWITCH MODE POWER SUPPLIES N CHANNEL POWER MOSFETS 2SK SERIES • New Product TA = 25˚C Absolute max ratings

2sk3808

Abstract: 2SK3807 2sk3805 2sk3806 Shortform Transistor Guide sp8m3 RSQ035P03 RTQ035P02 FET SP8M4 sp8m5
Contextual Info: Transistors MOS FET 1. Can be used with automatic placement machines. Available in a wide variety of packages. Like bipolar transistors, taped MOS FETs are available for assembly lines using automatic placement equipment. 2. MOS FETs operating from 4 volts and 2.5 volts

Contextual Info: Transistors Small switching 200V, 3A 2SK2887 •E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) Low on-resistance. 2) High-speed switching. 6 .5 ± 0.2 4) 2.3 2 ,+ o .a 3) W ide SOA (safe operating area). Gate-source voltage guaranteed at V gss= ± 3 0 V .

251C

Abstract: 2SK2715 2SK2887
Contextual Info: Transistors Small switching 200V, 3A 2SK2887 •E x te rn a l dim ensions (Units: mm) •F e a tu re s 1 ) Low on-res¡stance. 2) High-speed switching. 6) Easy to use in parallel. 0.5±0.1 V CO-»i? at V gss = ± 3 0 V . Easily designed drive circuits. - 0.1

rds035

Abstract: rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198
Contextual Info: Standard Transistor Product Solutions www.rohm.co.uk www.rohm.co.uk Small signal type MOSFET RHU002N06 Medium Power Bipolar Transistors 0.5W-1.2W MPT3 Package Description CPT3 MPT3 Item Application Driver Low VCE (sat) High hFE High voltage SW High voltage-High speed SW