2SD196 Search Results

2SB1308

Abstract: 2SD1963 T100
Contextual Info: 2SB1308 Transistors Power transistor −50V, −3A 2SB1308 zFeatures 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SD1963. zExternal dimensions (Unit : mm)

Contextual Info: Power Transistors 2SD1964 2SD1964 Silicon NPN Epitaxial Planar Type Package Dimensions Power Switching U n it * mir • Features 4.4m ax. 10.2m ax. r 5.7m ax, • L o w c o l l e c t o r - e m i t t e r s a tu r a t io n v o lta g e VcEtsao 2.9max.f • G o o d lin e a r ity o f D C c u r r e n t g a in ( h tt )

c 5802 transistor

Abstract: 2SD1961 TO-92U D45 TRANSISTOR ic 6802 l04c 2SD1962M 2SD2098 TRANSISTOR c 5802 2SD2097
Contextual Info: h ~7> V 7s $ / T ransistors 2SD1961 /2SD1962M/2SD2097/2SD2098 2SD1961 /2SD1962M 2SD2097/2SD2098 NPN V U =l > h 7 > y X $ Epitaxial Planar NPN Silicon Transistor • rliÈ U /D im en sio n s Unit: mm 1) VcE(sat) VcE(sat)=1V (Max.) Ic / I b = 4 A / 0.1 A tlT ^ - S o

2SD1959

Abstract: 2SB1301 2SD1951 2SD1941 2sd1944 2SD1948 2SD1940 2SD1943 2SD1946 2SD1947
Contextual Info: - 274 - m. 2SD1940 2SD1941 2SD1943 2SD1944 2SD1946 2SD1947 2SD1948 2SD1949 2SD1950 2SD1951 2SD1952 2SD1953 2SD1955 2SD1956 z&umï 2SD1958 2SD1959 2SD1961 2SD1962M 2SD1964 2SD197Q 2SD1971 2SD1972 2SD1974 2SD1975 2SD1976 2SD1977 2SD1978 2SD1979 2SD1981 2SD1983

2SD1964

Abstract: tf 130
Contextual Info: Power Transistors 2SD1964 Silicon NPN epitaxial planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 130 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open)

2SD1964

Contextual Info: Power Transistors 2SD1964 Silicon NPN epitaxial planar type For power switching Unit: mm • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage

2SD1963

Contextual Info: .$/ T ransistors 2SD1963 h -7 > V 7 I 9 w w Epitaxial Planar NPN Silicon Transistor Ü ÎJ i  ïi2 J * lltiÆ l/L o w Freq. Power Amp. ^ h P # 7 7 7 v a ffl/S tr o b o Flash. • W f*\T jS 0 /D im e n s io n s Unit : mm) 1 ) VcE (sat) A ' f t l / 'o V c e (sat)=0.45V (Max.)

Contextual Info: 2SD1961 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

TRANSISTOR D401

Abstract: D401 -y 2SD1963 D4011
Contextual Info: h 7 > S' 7 $ /Transistors O “ C m Q A * • ^ w w 2SD1963 it f ^ ^ '> 7 ^ y u - ^ 0 N P N y ,; n > K 7 > y ^ ^ Epitaxial Planar NPN Silicon Transistor fé S â fc ï^ J iflte ffl/L o w Freq. Power Amp. 7 s h P ? K 7 7 7 V j- f f l/S t r o b o Flash. • 51-JB‘T a i a / Dimensions Unit : mm)

f 4558

Abstract: 4558 fa 4558 2SC4588 4558, 4556 2SD2076 4558 nec 2SC4420 NEC 4559 2SC3425
Contextual Info: - m € Type No. € tt Manuf. 2SC 4548 / 2SC 4549 > H # o m. p B $ B S B 8 2SC 4550 2SC 4551 2SC 4552 H # SANYO *£ M TOSHIBA 2SD127D 2SD1271 2SC3748 2SC3709 2SÜ2151 2SC3710 2SD1964 2SD1947 2SD1271 2SC 4555 = 2SC 4556 1 t'y'T'y 2SC4162 2SC3626 y -ytry 2SC4459

1271A

Abstract: nec 1251 2SB2198 2SD1227M 2sd1070 2SC4008 2SD2394 2SD1593 2sd1855 2sd1944
Contextual Info: - S « Type No. tt 2SD 1243 » 2SD 1243A T 2SD 1245 fé fé fé 2S0 1246 H W 2SD 1247 y =- 2SD 1248 . 2SD 1244 « Manuf. H n SANYO T 2SD1064 T 2SD1064 Ä $ TOSHIBA a NEC B ÌL HITACHI □ MITSUBISHI h, ROHM 2SD1962M 2SC32S6 2SD1196 i 2SD1227M 2SD965 2SD1513

2sd1960

Abstract: 2sd1960 transistor 2SD196
Contextual Info: 2SD1960 h 7 > V 7s £ /Transistors 2SD 1960 Epitaxial Planar NPN Silicon Transistor /Medium Power Amp. • « * /Dim ensions Unit : mm 1) V c e (sat) 2) • Features 1) Extremely Low collector saturation voltage (Vce (sat) 2) Compact but possible to drive large

2SD1961

Abstract: C45A
Contextual Info: h 7 > y X $ / T ransistors 2SD1961 /2SD1962M/2SD2097/2SD2098 2SD1961/2SD1962M 2SD2097/2SD2098 NPN '> • ;= ! > Epitaxial Planar NPN Silicon Transistor • W f2\ti±E 3/D im ensio ns Unit: mm M,a n » oc /mv> • • iffiftlilfcJElte/Absolute Maximum Ratings (Ta=25°C)

Contextual Info: Transistors IC SMD Type Product specification 2SD1963 Features Low saturation voltage. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO

2sd1960 transistor

Abstract: 2sd1960 transistor 2SD1960 2SD 92 M transistor 2 SC 359 NPN TRANSISTOR 2sD1960
Contextual Info: 2SD1960 Transistor, NPN Features Dimensions Units : mm • available in TO-92 (SC-43) package • extremely low collector saturation voltage, typically VCE(8at) = 0.3 V at lc/lB = 4 A/0.1 A compact but possible to drive large current, typically l C ( m a x ) = 5 A

B204

Abstract: 2SB1308 2SD1963 rohm d204 D204
Contextual Info: Transistors 2SB1308 2SD1963 94S-166-B204 (94S-342-D204) 290 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the

BF239

Abstract: 2SD1963 RC244
Contextual Info: SPICE PARAMETER 2SD1963 by ROHM TR Div. * 2SD1963 NPN BJT model * Date: 2006/11/14 .MODEL 2SD1963 NPN + IS=700.00E-15 + BF=239.68 + VAF=3.5571 + IKF=15.353 + ISE=700.00E-15 + NE=1.6035 + BR=88.202 + VAR=100 + IKR=.35583 + ISC=228.00E-12 + NC=1.6682 + NK=.81465

2SD1961

Abstract: transistor 2097
Contextual Info: 2SD1961 /2S D 1962M /2S D 2097 h z 7 > y X ^ r /"Transistors 2SD1961 /2SD1962M /2SD2097 Epitaxial Planar NPN Silicon Transistor • 1 W fé ^ Ü E I/ D im e n s io n s Unit: mm & & 1) V cE (sa t)tfr '> '° V c E (s a t)= 1 V (M ax.) (I c / I b = 4 A / 0 . 1 A )

2SD1963

Abstract: 2SB1308 T100 RS Marking
Contextual Info: 2SD1963 Transistors Power transistor 50V, 3A 2SD1963 zFeatures 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SB1308. zExternal dimensions (Unit : mm)

T272i

Abstract: 2SC 5802 2SD1961 R2713 c 5802 transistor L2000 mrrr 2SD1962M 2SD2097 2SD2098
Contextual Info: ROHM CO L T » h7 40E /Transistors » Bi 7 Û S Ô ci ci cî OOObDST ö «RHM 2SD1961/2SD1962M/2SD2097/2SD2098 2 S D 1 S 6 1 /2 S D 1 962M S S 2 S D 2 C 9 7 /2 S ÎD 2 C 9 3 Vt>4V:'A'vJ|*J' NPN y y a > Epitaxial Planar NPN Silicon Transistor 1W f i xt'iiEl/'Dlm ensions Unît; mm

2SD1964

Abstract: 2SD196
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1964 Silicon NPN epitaxial planar type Unit: mm 10.0±0.2 4.2±0.2 5.5±0.2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

2SD1963

Abstract: B204 2SB1308 94S-166-B204 D204
Contextual Info: Transistors 2SB1308 2SD1963 94S-166-B204 (94S-342-D204) 290

transistor marking DG

Abstract: 2SD1963 low power TRANSISTOR SMD
Contextual Info: Transistors SMD Type Power Transistor 2SD1963 Features Low saturation voltage. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage

2SD1960

Abstract: 2sd1960 transistor 2SD1765 2SD2398 100V 2A MPT3 2SB1287 2SB1316 2SB1567 2SB1580 2SD1867
Contextual Info: 2SB1580 / 2SB1316 / 2SB1567 / 2SB12B7 2SD2195 / 2SD1960 / 2SD1867 / 2SD2398 / 2SD1765 Transistors I Power Transistor —100V, —2A 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 •F e a tu re s •A b s o lu te maximum ratings (Ta=25'C ) 1 ) Darlington connection for high DC current gain.