2SA214 Search Results

2SA2140

Abstract: 2SA214
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C

A2142

Abstract: 2SA2142
Contextual Info: 2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −600 V Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO

A2142

Abstract: 2SA2142
Contextual Info: 2SA2142 東芝トランジスタ シリコンPNP三重拡散形 2SA2142 ○ 高電圧スイッチング用 • 単位: mm 高耐圧です。: VCEO = −600 V 絶対最大定格 Ta = 25°C 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧

A2142

Abstract: 2SA2142 2SA21
Contextual Info: 2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −600 V Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO −600 V

Contextual Info: 'J , Unc. C/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA2140 DESCRIPTION 1 • Collector-Emitter Breakdown Voltage:V(BR)CEo=-180V(Min) • Good Linearity of hFE

Contextual Info: 2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −600 V Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO

Contextual Info: 2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −600 V Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO

C5935

Abstract: 2SA2140 2SC5993
Contextual Info: Product News Delivering high breakdown voltage plus high frequency characteristics. High-fT Transistors 2SA2140/2SC5993 „ Overview 2SA2140/2SC5993 high-fT transistors deliver a typical fT value of 100MHz or higher at VCEO of 180V while featuring high-speed switching and low-saturation voltage

SJD00316AED

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Parameter

2SA2140

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 15.0±0.5 • Satisfactory linearity of forward current transfer ratio hFE

Contextual Info: 2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −600 V Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO

A2142

Abstract: 2SA2142
Contextual Info: 2SA2142 東芝トランジスタ シリコンPNP三重拡散形 2SA2142 ○ 高電圧スイッチング用 • 単位: mm 高耐圧です。: VCEO = −600 V 絶対最大定格 Ta = 25°C 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧

TV power transistor datasheet

Abstract: 2SA2140
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2140 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min) ·Good Linearity of hFE APPLICATIONS ·Designed for power amplification and for TV VM circuit.

2SA2142

Abstract: A2142 2SA21 PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A
Contextual Info: 2SA2142 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2142 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −600 V Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO

2SA2140

Abstract: 2SA21
Contextual Info: Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SA124

Abstract: OC343 2SA123 MA520 TF65 OC54 t1826 2n1750 2SA37 OC56
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current