SJD00316AED Search Results

2SA2140

Abstract: 2SA214
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C

SJD00316AED

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Parameter

2SA2140

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 15.0±0.5 • Satisfactory linearity of forward current transfer ratio hFE

2SA2140

Abstract: 2SA21
Contextual Info: Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm For power amplification For TV VM circuit 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO