TO252 Search Results

4N06L30

Abstract: IPD25N06S4L-30 4N06L
Contextual Info: IPD25N06S4L-30 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 30 mΩ ID 25 A Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)

Contextual Info: PACKAGE DIMENSIONS TO252 5Pin -DL3 2.29±0 .09 1.14 ± 0. 13 6. 54 ±0.19 0.52 ±0. 06 6 .04 ± 0.0 6 5 .34 ±0.1 2 0 . 5 ± 0. 1 2 1 . 27 0 .52 ±0.0 6 0. 51 2.5 ± 0. 5 0 ～0.2 5 MI N4.15 (1.7) (1.4) (0.9) 5. 34 ±0.12 (2.5) (4.8) GD-X00501M-0 Ver.2005-03-15

Contextual Info: パッケージ外形図 TO252 3Pin 1 . 14 ± 0. 1 3 6 . 5 4 ±0. 1 9 0.52 ±0 . 0 6 1 (0 ～ 10ﾟ) 3 0.76 ±0 . 1 2 0 . 52 ±0 . 0 6 2.28 0. 51 2 0.76 ±0. 12 0 ～0 . 2 5 2.5±0.5 0.83 ±0.19 6 . 0 4 ±0 . 06 5 . 3 4 ±0 . 1 2 2.29±0 . 0 9 2 .2 8 4.15 ～4.50

Contextual Info: Package : TO252-5 1. Embossed Carrier Tape 1.5 0 13.5 2.9 Max 1.5 Min Material : Polycarbonate + Carbon Static Protection : Conductive 16.0 ±0.3 +0.1 2.0 ±0.1 10.5 ±0.1 0.3 ±0.05 1.75 ±0.1 4.0 ±0.1 7.5 ±0.1 2.7 ±0.1 (Unit : mm) 8.0 ±0.1 6.9 ±0.1

04N80C3

Abstract: PG-TO252-3-11 Q47040-S4563 SPD04N80C3 INFINEON marking
Contextual Info: SPD04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 1.3 Ω ID 4 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

00bc0w

Abstract: BA50BC0FP ba50bc0 BA33BC0FP 18bc0w 50bc0w BA33BC0 33bc0w BA30BC0 ba60bc0
Contextual Info: BA BC0 series Regulator ICs 1A Low-Dropout Voltage Regulator with Low Saturation BA BC0 series BA BC0 series offers a line of low saturation type regulators that can supply as low output current as 1A. The output voltage precision appears ±2%. By the lineup of output voltage, the package lineup of surface mounted TO252 and

SP*02N60

Abstract: P-TO252 SPD02N60 SPU02N60
Contextual Info: SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated Type VDS ID SPD02N60 600 V 2 A SPU02N60 Pin 1 Pin 2 Pin 3 G D S RDS on @ VGS Package VGS = 10 V P-TO252 5.5 Ω P-TO251 Maximum Ratings, at T j = 25 °C, unless otherwise specified

1117-33

Abstract: regulator 17-33 1117-3.3 1117 3.3 1117-ADJ AP1117 AP1117-ADJ 1117 voltage regulator
Contextual Info: AP1117 1A Low Dropout Positive Adjustable or Fixed-Mode Regulator „ Features „ General Description - 1.4V maximum dropout at full load current - Fast transient response - Output current limiting - Built-in thermal shutdown - Packages: SOT223, TO263, TO252, TO220,

DXT2010

Abstract: DXT2010P5 DXT2010P5-13
Contextual Info: A Product Line of Diodes Incorporated DXT2010P5 ADVANCE INFORMATION 60V NPN MEDIUM POWER TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W

DXT2012

Abstract: DXT2012P5 DXT2012P5-13 sot223 code r1k
Contextual Info: A Product Line of Diodes Incorporated DXT2012P5 ADVANCE INFORMATION 60V PNP MEDIUM POWER TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W

DTP3200B

Abstract: DXTP03200BP5 DXTP03200BP5-13
Contextual Info: A Product Line of Diodes Incorporated DXTP03200BP5 ADVANCE INFORMATION 200V PNP HIGH VOLTAGE TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W

3010KM

Abstract: SI-3012KM SI-3018KM SI-3025KM SI-3033KM
Contextual Info: 1-1-1 Linear Regulator ICs SI-3000KM Series Surface Mount, Low Current Consumption, Low Dropout Voltage Linear Regulator ICs •Features ■Absolute Maximum Ratings Ta=25°C • Compact surface mount package (TO252-5) Ratings Parameter • Low dropout voltage: VDIF ≤ 0.6 V (at IO = 1.0

AN 7274

Abstract: Q67006-A9728 AEB03613 AEP02281 AEP02512 P-TO252-3-11
Contextual Info: 5-V Low Drop Voltage Regulator TLE 7274 Features • • • • • • Output voltage 5 V ±2% Ultra low current consumption: typ. 20µA 300 mA current capability Very low-drop voltage Short-circuit-proof Suitable for use in automotive electronics P-TO252-3-1

16cn10n

Abstract: 16cn10 IPP16CN10N D53A PG-TO220-3 16CN1
Contextual Info: OptiMOS 2 Power-Transistor IPB16CN10N G IPD16CN10N G IPI16CN10N G IPP16CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)

f100 150 5

Contextual Info: 1-1-1 Linear Regulator ICs SI-3000KM Series Surface Mount, Low Current Consumption, Low Dropout Voltage Linear Regulator ICs •Features ■Absolute Maximum Ratings Ta=25°C • Compact surface mount package (TO252-5) Ratings Parameter • Low dropout voltage: VDIF ≤ 0.6 V (at IO = 1.0

2N0640

Abstract: BSPD25N06S2-40 SPD25N06S2-40 a6024
Contextual Info: SPD25N06S2-40 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 40 m ID 29 A P- TO252 -3-11 Type Package Ordering Code SPD25N06S2-40 P- TO252 -3-11 Q67060-S7427

TO252C-3

Contextual Info: TO252C-3 LSI Assembly Units : mm • TO252C-3 1.5 6.5 5.1 5.5 FIN 0.65 2 3 0.8 1 0.65 0.75 2.3 2.3 H=1.3Max. The contents described herein are subject to change without notice. Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any

04N60C3

Abstract: 04N60C 04N60 SPU04N60C3 P-TO252 SDP06S60 SPD04N60C3
Contextual Info: SPD04N60C3 SPU04N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • High peak current capability

02N60C3

Abstract: 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6
Contextual Info: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances

Contextual Info: パッケージ外形図 1 . 1 4 ±0 . 1 3 TO252 3Pin 6 .5 4 ± 0. 1 9 0.52 ±0.06 1 ( 0 ~ 10 ﾟ) 3 0.76 ± 0 . 1 2 0.52 ±0.06 2.28 0. 51 2 0.76 ±0.12 0 ∼0.25 2.5±0.5 0.83 ± 0.1 9 6.04 ±0.06 5.34 ±0.12 2.29±0.09 2.28 MIN4.15 ( 1. 7) ( 1. 4) ( 0. 9)

IEC61249-2-21

Abstract: IPP26CNE8N 25CNE8N
Contextual Info: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)

IPB26CN10NG

Abstract: IPI26CN10NG IPP26CN10NG IEC61249-2-21 IPB26CN10N IPI26CN10N IPP26CN10N ds 1-08 diode
Contextual Info: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)

Contextual Info: SPD30N03S2L-10 OptiMOS =Power-Transistor Product Summary Feature
N-Channel
Enhancement mode
Logic Level VDS 30 V R DS on 10 m
ID 30 A P- TO252 -3-11
Low On-Resistance RDS(on)
Excellent Gate Charge x RDS(on) product (FOM)
Superior thermal resistance

g51 smd

Abstract: 3N06L08 PG-TO252-3-11 ANPS071E IPD50N06S3L-08 GD15-0 3N06L
Contextual Info: IPD50N06S3L-08 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 7.8 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature