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IPD25CNE8N Datasheets (3)

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Infineon Technologies

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IPD25CNE8NG		Infineon Technologies	OptiMOS 2 Power-Transistor	Original	PDF	658.95KB	13
IPD25CNE8NG		Infineon Technologies	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 85V 35A TO252-3	Original	PDF		13
IPD25CNE8N G		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 85V 35A TO252-3	Original	PDF	619.27KB

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Infineon Technologies AG


Infineon Technologies AG IPD25CNE8NG Power Field-Effect Transistor, 35A I(D), 85V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	IPD25CNE8NG		10,006			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IPD25CNE8N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IEC61249-2-21 Abstract: IPP26CNE8N 25CNE8N Contextual Info: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	ipb26cne8n ipd25cne8n ipi26cne8n ipp26cne8n +3ipu25cne8n iec61249-2-21 25cne8n	PDF
IPP26CNE8N Abstract: d35 marking marking d35 25CNE8N Contextual Info: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	ipb26cne8n ipd25cne8n ipi26cne8n ipp26cne8n +4ipu25cne8n d35 marking marking d35 25cne8n	PDF
Contextual Info: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO252) 25 m: ID 35 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)	Original	ipb26cne8n ipd25cne8n ipi26cne8n ipp26cne8n +1ipu25cne8n	PDF
IPP26CNE8N Abstract: D35AV marking d35 25CNE8N 26CNE8N c25 diode to220 Contextual Info: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	ipb26cne8n ipd25cne8n ipi26cne8n ipp26cne8n +6ipu25cne8n d35av marking d35 25cne8n 26cne8n c25 diode to220	PDF
IPP26CNE8N Abstract: ATO-251 Contextual Info: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	ipb26cne8n ipd25cne8n ipi26cne8n ipp26cne8n +2ipu25cne8n ato-251	PDF
DD40 Contextual Info: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	ipb26cne8n ipd25cne8n ipi26cne8n ipp26cne8n +2ipu25cne8n dd40	PDF
S 170 MOSFET TRANSISTOR Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book Contextual Info: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and	Original	b152-h8203-g4-x-7600 s 170 mosfet transistor 8203 dual mosfet s 170 mosfet +7sot323 mosfet p mosfet switching frequency ips09n03la p-channel power mosfet so-8 tda21102 mosfet all mosfet equivalent book	PDF
3bs02 Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather	Original	infineo866-95 b152-h8926-g2-x-7600 nb08-1069 3bs02 +92bs01 08p06p tda 16888 ice2pcs02 tda16846 ice3b1565j mosfet 18p06p tda4605 ice3b0365j	PDF