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Infineon Technologies AG


Infineon Technologies AG IPP26CNE8NG Power Field-Effect Transistor, 35A I(D), 85V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	IPP26CNE8NG		300			1 - 10 - 100 - 1000 - 10000 -	Get Quote

26CNE8N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IEC61249-2-21 Abstract: IPP26CNE8N 25CNE8N Contextual Info: 26CNE8N G IPD25CNE8N G 26CNE8N G 26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	ipb26cne8n ipd25cne8n ipi26cne8n ipp26cne8n +3ipu25cne8n iec61249-2-21 25cne8n	PDF
IPP26CNE8N Abstract: d35 marking marking d35 25CNE8N Contextual Info: 26CNE8N G IPD25CNE8N G 26CNE8N G 26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	ipb26cne8n ipd25cne8n ipi26cne8n ipp26cne8n +4ipu25cne8n d35 marking marking d35 25cne8n	PDF
Contextual Info: 26CNE8N G IPD25CNE8N G 26CNE8N G 26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO252) 25 m: ID 35 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)	Original	ipb26cne8n ipd25cne8n ipi26cne8n ipp26cne8n +1ipu25cne8n	PDF
IPP26CNE8N Abstract: D35AV marking d35 25CNE8N 26CNE8N c25 diode to220 Contextual Info: 26CNE8N G IPD25CNE8N G 26CNE8N G 26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	ipb26cne8n ipd25cne8n ipi26cne8n ipp26cne8n +6ipu25cne8n d35av marking d35 25cne8n 26cne8n c25 diode to220	PDF
IPP26CNE8N Abstract: ATO-251 Contextual Info: 26CNE8N G IPD25CNE8N G 26CNE8N G 26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	ipb26cne8n ipd25cne8n ipi26cne8n ipp26cne8n +2ipu25cne8n ato-251	PDF
DD40 Contextual Info: 26CNE8N G IPD25CNE8N G 26CNE8N G 26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	ipb26cne8n ipd25cne8n ipi26cne8n ipp26cne8n +2ipu25cne8n dd40	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	b192-h6780-g10-x-7600 sp000012954 sp000013610 sp000017969 +13sp000014627 sp000018085 sp000018086 pef 24628 psb 21493 siemens pmb 6610 47n60c3 psb 21553 pmb7725 pef 22628 pmb6610 psb 50505 pmb 6819	PDF