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IPU25CNE8N Datasheets (1)

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Infineon Technologies

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IPU25CNE8NG		Infineon Technologies	Transistor Mosfet N-CH 85V 35A PG-TO251-3	Original	PDF	658.94KB	13

IPU25CNE8N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IEC61249-2-21 Abstract: IPP26CNE8N 25CNE8N Contextual Info: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	ipb26cne8n ipd25cne8n ipi26cne8n ipp26cne8n +3ipu25cne8n iec61249-2-21 25cne8n	PDF
IPP26CNE8N Abstract: d35 marking marking d35 25CNE8N Contextual Info: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	ipb26cne8n ipd25cne8n ipi26cne8n ipp26cne8n +4ipu25cne8n d35 marking marking d35 25cne8n	PDF
Contextual Info: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO252) 25 m: ID 35 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)	Original	ipb26cne8n ipd25cne8n ipi26cne8n ipp26cne8n +1ipu25cne8n	PDF
IPP26CNE8N Abstract: D35AV marking d35 25CNE8N 26CNE8N c25 diode to220 Contextual Info: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	ipb26cne8n ipd25cne8n ipi26cne8n ipp26cne8n +6ipu25cne8n d35av marking d35 25cne8n 26cne8n c25 diode to220	PDF
IPP26CNE8N Abstract: ATO-251 Contextual Info: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	ipb26cne8n ipd25cne8n ipi26cne8n ipp26cne8n +2ipu25cne8n ato-251	PDF
DD40 Contextual Info: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	ipb26cne8n ipd25cne8n ipi26cne8n ipp26cne8n +2ipu25cne8n dd40	PDF