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    SMC Corporation of America MHZ2-16CN1

    GRIPPER, PARALLEL STYLE AIR, MHZ SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS MHZ2-16CN1 Bulk 1
    • 1 $229.98
    • 10 $229.98
    • 100 $229.98
    • 1000 $229.98
    • 10000 $229.98
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    SOURIAU-SUNBANK 06F4019S1316CN-109

    ALUMINUM & BRONZE BACKSHELLS
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    RS 06F4019S1316CN-109 Bulk 16 Weeks 50
    • 1 -
    • 10 -
    • 100 $79.39
    • 1000 $76.89
    • 10000 $76.89
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    SOURIAU-SUNBANK 06A1019S1216CN-109

    ALUMINUM & BRONZE BACKSHELLS
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    RS 06A1019S1216CN-109 Bulk 16 Weeks 50
    • 1 -
    • 10 -
    • 100 $79.85
    • 1000 $77.32
    • 10000 $77.32
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    SOURIAU-SUNBANK 06F4019A1916CN-122

    ALUMINUM & BRONZE BACKSHELLS
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    RS 06F4019A1916CN-122 Bulk 16 Weeks 50
    • 1 -
    • 10 -
    • 100 $200.69
    • 1000 $194.29
    • 10000 $194.29
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    SOURIAU-SUNBANK 06F4019R1916CN-122

    ALUMINUM & BRONZE BACKSHELLS
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    RS 06F4019R1916CN-122 Bulk 16 Weeks 50
    • 1 -
    • 10 -
    • 100 $254.94
    • 1000 $246.81
    • 10000 $246.81
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    16CN1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    16cn10n

    Abstract: 16cn10 IPP16CN10N D53A PG-TO220-3 16CN1
    Contextual Info: OptiMOS 2 Power-Transistor 16CN10N G 16CN10N G 16CN10N G 16CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)


    Original     		ipb16cn10nipi16cn10nipd16cn10nipp16cn10n+7pg-to263-3pg-to252-316cn10n16cn10d53apg-to220-316cn1 PDF

    16cn10n

    Abstract: 16cn10 IPB16CN10N 16CN1
    Contextual Info: OptiMOS 2 Power-Transistor 16CN10N G 16CN10N G 16CN10N G 16CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)


    Original     		ipb16cn10nipi16cn10nipd16cn10nipp16cn10n+4pg-to263-316cn10n16cn1016cn1 PDF

    16cn10l

    Abstract: diode d54 JESD22 PG-TO220-3 IPP16CN10L G d54 marking IPP16CN10L
    Contextual Info: 16CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 15.7 mΩ ID 54 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		ipp16cn10lpg-to220-316cn10ldiode d54+3jesd22ipp16cn10l gd54 marking PDF

    16cn10n

    Abstract: IEC61249-2-21 IPP16CN10N PG-TO220-3 infineon marking TO-252
    Contextual Info: 16CN10N G 16CN10N G 16CN10N G 16CN10N G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO252) 16 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 53 A • Very low on-resistance R DS(on)


    Original     		ipb16cn10nipd16cn10nipi16cn10nipp16cn10n+5iec61249-2-21pg-to263-316cn10npg-to220-3infineon marking to-252 PDF

    IPP16CN10N

    Contextual Info: OptiMOS 2 Power-Transistor 16CN10N G 16CN10N G 16CN10N G 16CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)


    Original     		ipb16cn10nipi16cn10nipd16cn10nipp16cn10n+2pg-to263-316cn10n PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		b192-h6780-g10-x-7600sp000012954sp000013610sp000017969+13sp000014627sp000018085sp000018086pef 24628psb 21493siemens pmb 661047n60c3psb 21553pmb7725pef 22628pmb6610psb 50505pmb 6819 PDF

    16cn10n

    Abstract: IPP16CN10N PG-TO220-3
    Contextual Info: OptiMOS 2 Power-Transistor 16CN10N G 16CN10N G 16CN10N G 16CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)


    Original     		ipb16cn10nipi16cn10nipd16cn10nipp16cn10n+4pg-to263-3pg-to252-316cn10npg-to220-3 PDF