2SD1407A Search Results

2SD1407A Datasheets (10)

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Toshiba

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SD1407A	Toshiba	Low-Frequency Power Transistors (2SB Series, 2SD Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: Low-Frequency Power Transistor; Part Number: 2SB1016A	Original	PDF	129.33KB	4
2SD1407A	Toshiba	Silicon NPN triple diffused type transistor for power amplifier applications	Scan	PDF	172.51KB	3
2SD1407A	Toshiba		Scan	PDF	151.3KB	2
2SD1407A	Toshiba	TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE	Scan	PDF	173.27KB	3
2SD1407A-O	Toshiba	2SD1407 - TRANSISTOR 5 A, 100 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-10R1A, 3 PIN, BIP General Purpose Power	Original	PDF	129.35KB	4
2SD1407A-O(F)	Toshiba	2SD1407A - TRANS NPN 100V 5A 2-10R1A	Original	PDF	129.35KB	4
2SD1407A-R	Toshiba	2SD1407 - TRANSISTOR 5 A, 100 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-10R1A, 3 PIN, BIP General Purpose Power	Original	PDF	129.35KB	4
2SD1407A-Y	Toshiba	2SD1407 - TRANSISTOR 5 A, 100 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-10R1A, 3 PIN, BIP General Purpose Power	Original	PDF	129.35KB	4
2SD1407A-Y(F)	Toshiba	2SD1407A - TRANS NPN 100V 5A 2-10R1A	Original	PDF	129.35KB	4
2SD1407A-YF	Toshiba	2SD1407A - Trans GP BJT NPN 100V 5A 3-Pin(3+Tab) TO-220NIS	Original	PDF	147.96KB	4

2SD1407A Price and Stock

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Toshiba America Electronic Components


Toshiba America Electronic Components 2SD1407A-Y(F)
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Quest Components	2SD1407A-Y(F)		12,160			1 $2.44 10 $2.44 100 $2.44 1000 $0.86 10000 $0.73	Buy Now

2SD1407A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SD1407 Abstract: 2SB1016A toshiba 2sd1407 2SD1407A Contextual Info: TOSHIBA 2SB1016A TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE 2 S B 1 0 1 6A Unit in mm High Breakdown Voltage : V q e O = —100V Low Collector-Emitter Saturation Voltage : VCE s a t = -2-0V (Max.) Complementary to 2SD1407A	OCR Scan	2sb1016a --100v 2sd1407a 2sd1407 +1toshiba 2sd1407	PDF
2SB1016A Abstract: 2SD1407A Contextual Info: TO SHIBA 2SD1407A 2SD1407A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PO W ER AM PLIFIER APPLICATIONS • • • High Breakdown Voltage : VCEO“ 100V Low Collector Saturation Voltage : V qe sat = 2.0V (Max.) Complementary to 2SB1016A r 2 '^ "<v>0	OCR Scan	2sd1407a 2sb1016a	PDF
toshiba 2sd1407a Abstract: 2SB1016A 2SD1407A Contextual Info: TOSHIBA 2SD1407A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD1407A POWER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VCEO = 100V Low Collector Saturation Voltage : V qe sat -2.0V (Max.) Complementary to 2SB1016A	OCR Scan	2sd1407a 2sb1016a toshiba 2sd1407a	PDF
B1016A Contextual Info: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE sat = −2.0 V (max) • Complementary to 2SD1407A Absolute Maximum Ratings (Tc = 25°C)	Original	2sb1016a 2sd1407a 2-10r1a b1016a	PDF
Contextual Info: 2SD1407A TO SHIBA 2SD1407A TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE POWER AM PLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : V q e q = 100V Low Collector Saturation Voltage : V ^ g s a t ~ 2.0V (Max.)	OCR Scan	2sd1407a 2sb1016a	PDF
Contextual Info: TOSHIBA 2SD1407A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE AÍ17A PO W ER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS High. Breakdown Voltage : V£ e o = 100V Low Collector Saturation Voltage : V q e gat = 2.0V (Max.) Complementary to 2SB1016A	OCR Scan	2sd1407a 2sb1016a 10hts	PDF
D1407 Contextual Info: 2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE sat = 2.0 V (max) • Complementary to 2SB1016A	Original	2sd1407a 2sb1016a 2-10r1a d1407	PDF
2SB1016A Abstract: toshiba 2sd1407 2SD1407A Contextual Info: 2SB1016A TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 0 1 6A POWER AMPLIFIER APPLICATIONS Unit in mm • High Breakdown Voltage : V q e O = —100V • Low Colleetor-Emitter Saturation Voltage : VCE sat = —2.0V (Max.) • Complementary to 2SD1407A	OCR Scan	2sb1016a --100v 2sd1407a toshiba 2sd1407	PDF
D1407A Abstract: D1407 2SD1407A 2SB1016A Contextual Info: 2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE sat = 2.0 V (max) • Complementary to 2SB1016A	Original	2sd1407a 2sb1016a d1407a d1407	PDF
D1407 Abstract: D1407A 2SB1016A 2SD1407A Contextual Info: 2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE sat = 2.0 V (max) • Complementary to 2SB1016A	Original	2sd1407a 2sb1016a d1407 d1407a	PDF
D1407A Abstract: D1407 2SD1407A 2SB1016A Contextual Info: 2SD1407A 東芝トランジスタシリコンNPN三重拡散 2SD1407A 通信工業用 ○ 電力増幅用 • 単位: mm : VCEO = 100 V 高耐圧です。 • 飽和電圧が小さい。 : VCE sat = 2.0 V (最大) • 2SB1016A とコンプリメンタリになります。	Original	2sd1407a 2sb1016a 2-10r1a d1407a +1d1407	PDF
2SB1016A Abstract: 2SD1407A Contextual Info: 2SD1407A TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD1407A POWER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VCEO = 100V Low Collector Saturation Voltage : V qe sat -2.0V (Max.) Complementary to 2SB1016A	OCR Scan	2sd1407a 2sb1016a	PDF
B1016A Abstract: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SD1407A Contextual Info: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE sat = −2.0 V (max) • Complementary to 2SD1407A Maximum Ratings (Tc = 25°C)	Original	2sb1016a 2sd1407a b1016a toshiba transistor silicon pnp epitaxial type	PDF
2SB1016A Abstract: 2SD1407A B1016A Contextual Info: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications • Unit: mm High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE sat = −2.0 V (max) • Complementary to 2SD1407A Absolute Maximum Ratings (Tc = 25°C)	Original	2sb1016a 2sd1407a b1016a	PDF

SB1016A Abstract: 2SB1016A 2SD1407A Contextual Info: TO SH IBA 2SB1016A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 0 1 6A POWER AMPLIFIER APPLICATIONS Unit in mm • High Breakdown Voltage : V q e O = —100V • Low Colleetor-Emitter Saturation Voltage : VCE sat = —2.0V (Max.) • Complementary to 2SD1407A	OCR Scan	2sb1016a --100v 2sd1407a sb1016a	PDF
smd transistor h2a Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output	Original	bce0016c e-28831 bce0016d smd transistor h2a +9smd transistor h2a npn transistor smd h2a 2sa1943 amplifier circuit diagram tpcp8l01 2sc5200, 2sa1943 h2a transistor smd 2sc5200 power amplifiers diagram marking smd pnp transistor h2a smd h2a	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9sce0004k sc-43 2sc1815 700the +10gt30f124 tpcp8r01 gt30j124 japanese 2sc transistor 2010 smd transistor h2a smd marking 8l01 tk25e06k3 gt45f122 gt30g124 gt30f123	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	sc-43 2sc1815 tps615 tps616 +11tps610 transistor bc 245 247y smd transistor h2a gt30g122 gt35j321 gt45f123 marking smd pnp transistor h2a gt45f122 gt45f122 series gt30f122	PDF
2SA1941 amp circuit Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including	Original	bce0016f 2sa1941 amp circuit 2sc3303 2sd880 +7to3p package 2sa114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 toshiba bipolar power transistor amplifier design tta1943	PDF
2SK1045 Abstract: 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373 Contextual Info: STI Type: 2SC642A Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 800 ICEV: ICEV A: hFE: 30 hFE A: 150m VCE: VBE: IC: COB: fT: 2.0 Case Style: TO-204AA/TO-3: Industry Type: 2SC642A STI Type: 2SC643 Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 1100	Original	2sc642a o-204aa/to-3 2sc643 2n4030die +122c4030 2sc643a 2sk1045 2sk1048 2sk1050 2sk1044 2sd2791 2sk1011 2sd2498 2sd299 2sd300 2sd373	PDF
Contextual Info: T O S H IB A 2SB1016A TO SH IBA TRANSISTO R SILICON PNP EPITAXIAL TYPE 2 S B 1 0 1 6A PO W ER AM PLIFIER APPLICATIO NS U n it in m m 10 ±0.3 • High Breakdown Voltage : V q e q = —100V • Low Collector-Emitter Saturation Voltage 2.7±0.2 $ 5 : v C E s a t = - 2'° v (Max.)	OCR Scan	2sb1016a 2sd1407a	PDF
2sC5200, 2SA1943 Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N Contextual Info: 製品カタログ 2010-4 東芝半導体製品カタログパワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4	Original	ttc003 sc-64 bcj0016f bcj0016e +92sc5200, 2sa1943 tpcp8l01 tpcp8602 2sc5200 2sa1943 2sc5200 2sc4793 2sa1837 2sc5200, 2sa1943, 2sc5198 ttc13003l 2sc3180n	PDF
2SA1930 2sc5171 Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228	Original	sc-63/64 sc-62 sc-59 ot-23 +162sa1483 2sc3803 2sa1426 2sa1204 2sa1734 2sa2065 2sa1930 2sc5171 tpc8107 equivalent tpc8107 application circuit 2sc4157 equivalent 2sa1930 transistor equivalent 2sa949 equivalent 2sd880 equivalent equivalent 2sc5200 2sk2865 equivalent marking 4d npn	PDF
transistor Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220 Contextual Info: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N	Original	2sd1160 2sd1140 2sd1224 2sd1508 +162sd1631 2sd1784 2sd2481 2sb907 2sd1222 2sd1412a transistor power transistor npn to-220 pnp power transistor to220 transistor pnp damper diode darlington transistor 2sd2206a power transistor npn darlington transistor to220	PDF

2SD1407A Search Results

2SD1407A Datasheets (10)

2SD1407A Price and Stock

Toshiba America Electronic Components 2SD1407A-Y(F)

2SD1407A Datasheets Context Search

2SD1407

2SB1016A

toshiba 2sd1407a

B1016A

D1407

2SB1016A

D1407A

D1407

D1407A

2SB1016A

B1016A

2SB1016A

SB1016A

smd transistor h2a

GT30F124

transistor bc 245

2SA1941 amp circuit

2SK1045

2sC5200, 2SA1943

2SA1930 2sc5171

transistor