2SB1016A Search Results

2SD1407

Abstract: 2SB1016A toshiba 2sd1407 2SD1407A
Contextual Info: TOSHIBA 2SB1016A TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE 2 S B 1 0 1 6A Unit in mm High Breakdown Voltage : V q e O = —100V Low Collector-Emitter Saturation Voltage : VCE s a t = -2-0V (Max.) Complementary to 2SD1407A

2SB1016A

Abstract: 2SD1407A
Contextual Info: TO SHIBA 2SD1407A 2SD1407A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PO W ER AM PLIFIER APPLICATIONS • • • High Breakdown Voltage : VCEO“ 100V Low Collector Saturation Voltage : V qe sat = 2.0V (Max.) Complementary to 2SB1016A r 2 '^ "<v>0

toshiba 2sd1407a

Abstract: 2SB1016A 2SD1407A
Contextual Info: TOSHIBA 2SD1407A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD1407A POWER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VCEO = 100V Low Collector Saturation Voltage : V qe sat -2.0V (Max.) Complementary to 2SB1016A

B1016A

Contextual Info: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE sat = −2.0 V (max) • Complementary to 2SD1407A Absolute Maximum Ratings (Tc = 25°C)

2SB1016A

Abstract: B1016 B1016A
Contextual Info: 2SB1016A 東芝トランジスタ シリコンPNP三重拡散形 2SB1016A ○ 電力増幅用 単位: mm • 高耐圧です。 • 飽和電圧が小さい。: VCE sat = −2.0 V (最大) : VCEO = 100 V 絶対最大定格 (Tc = 25°C) 項 目 記 号 定

Contextual Info: TOSHIBA 2SD1407A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE AÍ17A PO W ER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS High. Breakdown Voltage : V£ e o = 100V Low Collector Saturation Voltage : V q e gat = 2.0V (Max.) Complementary to 2SB1016A

D1407

Contextual Info: 2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE sat = 2.0 V (max) • Complementary to 2SB1016A

2SB1016A

Abstract: toshiba 2sd1407 2SD1407A
Contextual Info: 2SB1016A TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 0 1 6A POWER AMPLIFIER APPLICATIONS Unit in mm • High Breakdown Voltage : V q e O = —100V • Low Colleetor-Emitter Saturation Voltage : VCE sat = —2.0V (Max.) • Complementary to 2SD1407A

D1407A

Abstract: D1407 2SD1407A 2SB1016A
Contextual Info: 2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE sat = 2.0 V (max) • Complementary to 2SB1016A

D1407

Abstract: D1407A 2SB1016A 2SD1407A
Contextual Info: 2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE sat = 2.0 V (max) • Complementary to 2SB1016A

D1407A

Abstract: D1407 2SD1407A 2SB1016A
Contextual Info: 2SD1407A 東芝トランジスタ シリコンNPN三重拡散 2SD1407A 通 信 工 業 用 ○ 電力増幅用 • 単位: mm : VCEO = 100 V 高耐圧です。 • 飽和電圧が小さい。 : VCE sat = 2.0 V (最大) • 2SB1016A とコンプリメンタリになります。

2SB1016A

Abstract: 2SD1407A
Contextual Info: 2SD1407A TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD1407A POWER AMPLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VCEO = 100V Low Collector Saturation Voltage : V qe sat -2.0V (Max.) Complementary to 2SB1016A

Contextual Info: T O S H IB A 2SB1016A TO SH IBA TRANSISTO R SILICON PNP EPITAXIAL TYPE 2 S B 1 0 1 6A PO W ER AM PLIFIER APPLICATIO NS U n it in m m 10 ±0.3 • High Breakdown Voltage : V q e q = —100V • Low Collector-Emitter Saturation Voltage 2.7±0.2 $ 5 : v C E s a t = - 2'° v (Max.)

B1016A

Abstract: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SD1407A
Contextual Info: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE sat = −2.0 V (max) • Complementary to 2SD1407A Maximum Ratings (Tc = 25°C)

Contextual Info: TOSHIBA 2SB1016A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 0 1 6A POWER AMPLIFIER APPLICATIONS U n it in mm • • High Breakdown Voltage : V cEO “ —100V Low Collector-Emitter Saturation Voltage : VCE sat = -2.0V (Max.) • Com plem entary to 2SD1407A

SB1016A

Abstract: 2SB1016A 2SD1407A
Contextual Info: TO SH IBA 2SB1016A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 0 1 6A POWER AMPLIFIER APPLICATIONS Unit in mm • High Breakdown Voltage : V q e O = —100V • Low Colleetor-Emitter Saturation Voltage : VCE sat = —2.0V (Max.) • Complementary to 2SD1407A

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

Contextual Info: 2SD1407A TO SHIBA 2SD1407A TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE POWER AM PLIFIER APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : V q e q = 100V Low Collector Saturation Voltage : V ^ g s a t ~ 2.0V (Max.)

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

2sC5200, 2SA1943

Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
Contextual Info: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

transistor

Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
Contextual Info: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N