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TDK Corporation B78304B1016A003 XFMR DC/DC CONV 4.3MH SMD
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DigiKey	B78304B1016A003	Tape & Reel			900	1 - 10 - 100 - 1000 $4.63 10000 $4.63	Buy Now
Mouser Electronics	B78304B1016A003					1 $6.72 10 $5.36 100 $4.50 1000 $4.30 10000 $4.30	Get Quote
ABB Low Voltage Products and Systems EPD24-TB-101-6A Industrial Surge Protectors EPD LOAD PROTCT 24VDC,W SIGNAL OUT
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Mouser Electronics	EPD24-TB-101-6A					1 $168.91 10 $161.37 100 $161.37 1000 $161.37 10000 $161.37	Get Quote
RS	EPD24-TB-101-6A	Bulk			1	1 $203.84 10 $193.65 100 $183.46 1000 $183.46 10000 $183.46	Get Quote
Grayhill Inc 84BLN-BB1-016AN Keypads Keypad,4x4, backlit, red, mounting nuts
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Mouser Electronics	84BLN-BB1-016AN					1 - 10 - 100 $97.39 1000 $97.39 10000 $97.39	Get Quote
Sager	84BLN-BB1-016AN					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Grayhill Inc 84BL-BB1-016AN Keypads Keypad, 4x4, backlit, red
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Mouser Electronics	84BL-BB1-016AN					1 - 10 - 100 $99.22 1000 $99.22 10000 $99.22	Get Quote
Sager	84BL-BB1-016AN					1 - 10 - 100 - 1000 - 10000 -	Buy Now
SMC CYLINDERS CJ2B10-16AZ ROUND BODY CYLINDER, AIR, CJ2-Z SERIES
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RS	CJ2B10-16AZ	Bulk		5 Weeks	1	1 $35.29 10 $34.23 100 $34.23 1000 $34.23 10000 $34.23	Get Quote

B1016A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
B1016A Contextual Info: B1016A TOSHIBA Transistor Silicon PNP Epitaxial Type B1016A Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE sat = −2.0 V (max) • Complementary to 2SD1407A Absolute Maximum Ratings (Tc = 25°C)	Original	2SB1016A 2SD1407A 2-10R1A B1016A	PDF
2SB1016A Abstract: B1016 B1016A Contextual Info: B1016A 東芝トランジスタシリコンPNP三重拡散形 B1016A ○ 電力増幅用単位: mm • 高耐圧です。 • 飽和電圧が小さい。: VCE sat = −2.0 V (最大) : VCEO = 100 V 絶対最大定格 (Tc = 25°C) 項目記号定	Original	2SB1016A 2-10R1A 20070701-JA 2SB1016A B1016 B1016A	PDF
B1016A Abstract: 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SD1407A Contextual Info: B1016A TOSHIBA Transistor Silicon PNP Epitaxial Type B1016A Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE sat = −2.0 V (max) • Complementary to 2SD1407A Maximum Ratings (Tc = 25°C)	Original	2SB1016A 2SD1407A B1016A 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type 2SD1407A	PDF
2SB1016A Abstract: 2SD1407A B1016A Contextual Info: B1016A TOSHIBA Transistor Silicon PNP Epitaxial Type B1016A Power Amplifier Applications • Unit: mm High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE sat = −2.0 V (max) • Complementary to 2SD1407A Absolute Maximum Ratings (Tc = 25°C)	Original	2SB1016A 2SD1407A 2SB1016A 2SD1407A B1016A	PDF