2SC3216
Abstract: 2SC3217-M 2SC3214 2SA1295 2SC3264 2SC3217 2sc3246 2SC3264 2SC3215 2SA1285 2SC3251
Contextual Info: - 150 - Ta=25t , *EPÍÍTc=25t;) m 2SC3214 2SC3215 2SC3216 2SC3217—M 2SC3218-M 2SC3225 2SC3233 2SC3242 2SC3242A 2SC3243 2SC3244 2SC3245 2SC3245A 2SC3246 2SC3247 2SC3249 2SC3250 2SC3251 2SC3253 2SC3254 2SC3255 2SC3256 2SC3257 2SC3258 2SC3263 2SC3264 2SC3265
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eptttc-252sc32142sc32152sc3216+112sc3217-m800mhz2sc3218-m2sc32252sc32332sa1295 2sc32642sc32172sc32462sc32642sa12852sc3251
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2SA1285
Abstract: 2SC3245 2SA1285 2SC3245 2SA1285A 2SC3245A
Contextual Info: 2SC3245, 2SC3245A - f 'i V 2 SC 3 2 4 5 , r 2SC 3245AÜ , 3 > N P N X + ^ P ’C 'ïo i^IÍJEE. itihpE-T, h^ i : K , t t íS g t í j h f f i ^ 3 > N P N i t ° * IJ ¿ í j f T* í i ^ <, C o b * î/J N2 * < ix ft. H iF i ^ * 7 — 7 ^ ÿ ,oC0'7°V K
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2sc32452sc3245au15tft2sa1285+72sa1285a200mhzvceo-120v900mwta-255c2sa1285 2sc32452sc3245a
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2SA1281
Abstract: 2SA1277 2SA1273 2sa1274 2SA1251 2SA1218 2SA1236 2sc3248 2sa1229 2SA1267
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA1201 -120 -5 -800 500 150 140 -5 -100 120* 27 2SA1202 -80 -5 -400
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2sa12012sa12022sa12032sa1204+162sa12052sa12062sa12072sa12082sa12092sa12102sa12812sa12772sa12732sa12742sa12512sa12182sa12362sc32482sa12292sa1267
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marking CODE n3 6PIN
Abstract: MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7
Contextual Info: ２０１０年３月版 Sales Guide セールスガイド 小信号トランジスタダイオード/リニアIC Small Signal TransistorＤiodes / Linear IC 目次 INDEX 形名について The Type Name of the Transistor ･･･････････････････････････････ 2
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2sa1235marking code n3 6pinmosfet transistor smd marking code nhink0001ac+7rt8h2sa798 equivalent2sc2259marking code nj smd transistormc931 diodesmd transistor marking a7 p7transistor smd marking ka p7
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2SC2720
Abstract: 2SC2720-A 2SD772 nec 2SC3S31 2SC3098 2SC3358 2SC3531 2SC1730 nec 2sd772 2SC3110
Contextual Info: - M £ tt € Manuf. Type No. 2SC 3786 / H 2SC 3 7 8 7 / " = 2SC 3788 = ft ft 2SC 3 7 8 9 ^ = 2SC 3790 = B * SANYO TOSHIBA 'S NEC B tL HITACHI ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — b. ROHM 2MJ1Z7Ö 2SD1692 $ * 173 2SC1953 2SC3620 2SC2682 2SC2258
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2sd16922sd12762sc19532sc3620+152sc26822sc22582sc3271f2sc26882sc15012sc27202sc2720-a2sd772 nec2sc3s312sc30982sc33582sc35312sc1730nec 2sd7722sc3110
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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2sc738
Abstract: 2SA1993 2SA1994 2SA1285 2SA904A 2sc3246 2sc2603 2SA847
Contextual Info: SILICON TRANSISTORS • S M A L L -S IG N A L TRANSISTORS C onsum er e le c tro n ic e q u ip m en ts <Ta = 25 C> Max. ratings Electrical characteristics Bias Type No. Application Structure VcBO Vi loaoimax »T v œo Vrao M (V) ¡0 ; {mA! Pc Ti (mW) Vœ
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2sa847a2sa904a2sa9992sa999l+122sai2822sa1282a2sa12832sa12s42sa12852sa1285a2sc7382sa19932sa19942sc32462sc26032sa847
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TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2n1092n13042n13052n1307+162n16132n17112n18932n21022n21482n2165transistor datasheet d1555d1555 transistortransistor d1651d1555d1557d1554d1651transistor s1854transistor d1555transistor d1878
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2SA1285
Abstract: 2SC3245 2SA1285A 2SC3245A
Contextual Info: 25A1285, 2SA1285A y°' 7'ffl V m . i; □ > p n p x t 0^ ' > 7 )\*m m 2SA1285. 2 S A 1 2 8 5 A U . f â m M l t Ï Ï $ < D > V 3 > P N P J . b° ^ * ^ r h t: Ä 7 ^ X # - r '- r o <. h FE r \ C o b * T/j ' ^ £>1\ H i F i ^ 0l7 — r > 7 ° 7 Û|J K' ÿ A "7'lê,
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2sa1285a2sa12852sa1285au2sc3245+32sc3245a200mhz900mw
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2SA1309
Abstract: 2SA1307 2sc3180n 2SA1286 2SA1295 2SA1285 2SA1263N 2SA1264N sa1312 2SC3280
Contextual Info: - 28 - M % Ta=25t , *E[KäTc=25cC) m. 2SA1262 2SA1263N 2SA1264N 2SA1265N 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 2SA1287 2SA1289 2SA1290 2SA1291 2SA1292 2SA1293 2SA1294 2SA1295 2SA1296 2SA1297 2SA1298 2SA1299 2SA1300 2SA1301 2SA1302 2SA1303
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ta-25cc2sa12622sa1263n2sa1264n+142sa1265n2sa12822sa1282a2sa1283o-92jf2sa13002sa13092sa13072sc3180n2sa12862sa12952sa1285sa13122sc3280
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sc 3228
Abstract: C3468 2SD2159 2SC 3205 2SD880 2SC3296 2sc3192 2SC2320 c2981 2SD1812
Contextual Info: - 15 6 - §ä « T y p e No. a « Manuf. 2SC 3186 •tf-VÍTV 2SC 3187 ✓ tö T 2SC 3189 = 2SC 3190 *' »H m ? nam ? »am ? ita -?«a«? »a«? ttS « T 2SC 3191 2SC 3192 * ' 2SC 3193 / 2SC 3194 2SC 3195 ¿ 2 SC 3196 h n T O S HIBA «am i »am ? 2SC 3199 X
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2sc31862sc31872sc31892sc3190+152sc31912sc31922sc31932sc31942sd10852sc3468sc 3228c34682sd21592sc 32052sd8802sc32962sc2320c29812sd1812
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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2SC3245
Abstract: 2SA1285 2SC3245A
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3245,2SC3245A FOR PRE-DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC3245.2SC3245A is a silicon NPN epitaxial type transistor. «&5.1MAX Designed with high voltage, high hFE, high fr, low Cob and excellent hFE
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2sc32452sc3245a2sa12852sa1285a+4200mhz150to800900mw270hz
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transistor eb 2030
Abstract: 2SA1285 Tone Control amp OC120
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1285, 2SA1285A FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SA1285, 2SA1285A is a silicon PN P epitaxial type transistor. ¿5 .1 M A X Designed with high voltage, high hFE, high fr, small Cob and excellent hFE
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2sa12852sa1285a2sc32452sc3245a+6200mhz900mw270hztransistor eb 2030tone control ampoc120
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2SC772
Abstract: 2SC614 2sc1216 2SC111 500N 50P 2SC645 nec RF package SOT89 2SC3245af 2sc206 2SC2705
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 10 2N4961 2N4963 2N3723 2SC1218 2SC1218 JC546 SE6021 BSS64R TMPT3798A BFY45 15 2SC1775 2SC2853 2SC2855 5 >= 20 25 30 35 >= 40 45 V(BR)CEO 50 2N6220 A5T5059 2N6219 A5T5058 A5T5058 2N6218 SO 65 70 75
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2n49612n49632n37232sc1218+15jc546se6021bss64rtmpt3798abfy452sc7722sc6142sc12162sc111500n 50p2sc645nec rf package sot892sc3245af2sc2062sc2705
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