2SB726 Search Results

Contextual Info: Panasonic Transistor 2SB726 Silicon PNP epitaxial planer type For general am plification • Features • High foward current transfer ratio hpE. • High collector to emitter voltage V c e o A bsolute M axim um Ratings Parameter Collector to base voltage

Contextual Info: Transistor 2SB0726 2SB726 Silicon PNP epitaxial planer type For general amplification M Di ain sc te on na tin nc ue e/ d Unit: mm 5.0±0.2 High foward current transfer ratio hFE. High collector to emitter voltage VCEO. • Absolute Maximum Ratings Parameter

Contextual Info: Transistor 2SB0726 2SB726 Silicon PNP epitaxial planer type For general amplification Unit: mm 5.0±0.2 High foward current transfer ratio hFE. High collector to emitter voltage VCEO. 0.7±0.2 ● • Absolute Maximum Ratings Symbol (Ta=25˚C) Ratings Unit

2SB726

Contextual Info: Transistor 2SB726 Silicon PNP epitaxial planer type For general amplification Unit: mm 5.0±0.2 High foward current transfer ratio hFE. High collector to emitter voltage VCEO. • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage

184 transistor

Abstract: 2SB0726 2SB726
Contextual Info: Transistor 2SB0726 2SB726 Silicon PNP epitaxial planer type For general amplification Unit: mm 5.0±0.2 High foward current transfer ratio hFE. High collector to emitter voltage VCEO. 0.7±0.2 ● • Absolute Maximum Ratings 12.9±0.5 0.7±0.1 (Ta=25˚C)

2SB0726

Abstract: 2SB726
Contextual Info: Transistor 2SB0726 2SB726 Silicon PNP epitaxial planer type For general amplification M Di ain sc te on na tin nc ue e/ d Unit: mm ● 5.1±0.2 High foward current transfer ratio hFE. High collector to emitter voltage VCEO. 0.7±0.2 ● • Absolute Maximum Ratings

2SB726

Abstract: 2SB0726
Contextual Info: Transistor 2SB0726 2SB726 Silicon PNP epitaxial planer type For general amplification Unit: mm 5.0±0.2 High foward current transfer ratio hFE. High collector to emitter voltage VCEO. • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

2SD836

Abstract: 2SB750 2SB750A 2SB710A 2SD602 2sd836a 2SB71 2SB710 2SB726 2SD602A
Contextual Info: PA NASONIC INDL/ELEK-CSEMI} 75C D | ^ 3 5 0 5 4 h * T - • ^ * 1 5 0000045 4 2SB710, 2SB710A 2SB710, 2SB710A '> U Z] > P N P x tf £ ¿ r ì / T — Si P N P Epitaxial Planar — Ä S IM te ffl/ G e n e r a l A m p l i f i e r 2SD 602, 2SD 602A t > Z f l S > 2 ')/

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

2SB737

Abstract: 2SB694H 2SB709 2SB718 2SB747 2sb707 2SD601 2SD756 2SD756A 2SB698
Contextual Info: - 58 - n Ta=25*C,*EP(iTc=25t5 2SB694H B Ä L F PA/PStf VcBO VcEO (V) (V) Ice D C) (A) Pe Pe* (W) m ^ fó 4# te (Ta=25°C) (max) ( u Pí) VcB (V) (min) (max) Vc e (V) Ic /I e (A) -0.05 LF PA/LS PSW -0.5 -1.5 LF PA/LS PSW -0.5 -1.5 -0.5 2SB703A LF PA/LS PSW

2SB737

Abstract: 2SA1038 2sa1015 2SB873 2SA999 2SA1104 2SA847 2SA1015 ba 2SA1232 2SA933S
Contextual Info: - 22 m - s tt 2 SA 1078 ^ 2SA 1079 2SA 1080 . 2SA 2SA 2SA 2SA 2SA 2SA 2SA 1081 _ 10 82 1083 1084 , 1085 ^ 1090 ' 1091 2SA 1092 -• 2SA 1093 2SA 1094 .» 2SA 1 095 . 2SA 10 9 6 ^ m 1096A 0 ÍL 0 ÍL 0 ÍL 0 it * 2 S 3? fé T sí 2 S * ^ fé T = m 11 02 - v-y'ry

2SB701

Abstract: 2SB773A 2SB773 2SB758A 2SD1033 2SB722 2SB714 2SB756 2SB737 2SB758
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Pc (mA) (mW) Electrical characteristics (Ta=25ºC) DC Current Gain fab/ft* Cob hFE VCE Ic (ºC) (MHz) (pF) (V) (mA) Tj 120W 150 (Tc=25ºC) 125W 150 (Tc=25ºC) 125W 150 (Tc=25ºC) 40W 150

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

2SA1315-Y

Abstract: 2SB560 2SA785 2N4033 2SA817Y LOW-POWER SILICON PNP 2SA1315Y 2SA1316GR 2SA1316-GR TXD10K40.80
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 768 V BR CEO hFE (V) V(BR)CEO 5 Manufacturer >= Ie Max (A) fT (Hz) Cobo V(BR)CBO Max PD Max Toper Max Package Style 70 V, (Cont'd) lOOn lOOn 100M 100M BC448A

2SC5224

Abstract: 2SA1949 2SB1573 2SD2407 A1534A 2SB0774 2SB1576 2SB946 T0-92N 2SA1951
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions U Type (D36) TO-126 (D49 * , D50) MT3 Type (D40) MT4 Type (D41) TO-202 (D51) T0-220(a) (D52) TO-220F (D55) 2SC1398A

D1274A

Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Contextual Info: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691