2SB71 Search Results

2SB710A

Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SB710A SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Large collector current IC. 1 0.55 insertion through the tape packing and the magazine packing. +0.1 1.3-0.1 +0.1 2.4-0.1 Mini type package, allowing downsizing of the equipment and automatic

2SB713

Abstract: transistor npn 100w amplifier 2SD751
Contextual Info: PANASONIC INDL/ELEK -CIO 15E D • t,=132852 0DlD4tl 1 Silicon Epitaxal Base Mesa Transistor 2SB713 PNP 2SD751 (NPN) TOP-3 Package (See Page 36 For Dimensions) 2SB713 (PNP) Absolute Maximum Ratings (Ta=25°C) Hem Collector-Base Voltage Collector-Emitter Voltage

2SD756

Abstract: 2sd756a 2SB716 Hitachi DSA0097 2SD756 equivalent 2SB715 2SB716A 2SD755
Contextual Info: 2SD755, 2SD756, 2SD756A Silicon NPN Epitaxial Application • Low frequency high voltage amplifier • Complementary pair with 2SB715, 2SB716 and 2SB716A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD755, 2SD756, 2SD756A Absolute Maximum Ratings Ta = 25°C

2SD756A

Abstract: 2SB716 2SD756 2SB716A 2SD75 2SD755
Contextual Info: HITACHI 2SD755, 2SD756, 2SD756A SILICON NPN EPITAXIAL LOW FREQ UENCY HIGH VOLTAGE AMPLIFIER Com plem entary pair with 2 S 3 7 I5 , 2 S 0 7 1 6 and 2SB716A T " Si n : C p!j a |_ l r "1 _ 1. Emitter 2. Cal leerer 3. D im >i‘- JEDEC TO-92 MOD. M AXIM UM CO LLECTO R DISSIPATIO N

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0710 (2SB710), 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) Unit: mm 0.40+0.10 –0.05 • Features

BSW45A

Abstract: LOW-POWER SILICON PNP p60n 2SA1299E BC212BP
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 BC212LA BCW86 BCW86 BCW86 2SB637K 2SB710A 2SA891 2SA891 2SA891 2SB621A >= Manufacturer V(BR)CEO fr (V) (Hz) See Index Micro Elecs Semi Inc Advncd Semi

2SB710A

Contextual Info: Transistor 2SB710, 2SB710A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD602 and 2SD602A Unit: mm • Features Collector to 2SB710 emitter voltage 2SB710A –25 –50 VEBO –5 V Peak collector current ICP –1 A Collector current

Contextual Info: Product specification 2SB710A SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Large collector current IC. 1 0.55 insertion through the tape packing and the magazine packing. +0.1 1.3-0.1 +0.1 2.4-0.1 Mini type package, allowing downsizing of the equipment and automatic

2SB713

Contextual Info: JMnic Product Specification 2SB713 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Wide area of safe operation ・Excellent good linearity of hFE APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SB710

Abstract: marking CQ
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SB710 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 insertion through the tape packing and the magazine packing. 0.55 Mini type package, allowing downsizing of the equipment and automatic

2SB713

Contextual Info: Inchange Semiconductor Product Specification 2SB713 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Wide area of safe operation ・Excellent good linearity of hFE APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION

2SD2458

Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
Contextual Info: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type

2SB717

Abstract: 2SB718 2SD757 2SD758 TO202AA
Contextual Info: 2SB717.2SB718 y i j a > PN P X tf £ * V 7 M I _ _ SILIC O N PN P EPIT A X IA L f i ü & ¡ g E E iS íIJ B 2SD757, 2SD758 ¿ 3 LO W F R E Q U E N C Y HIGH VO LTA G E A M P LIFIER Complementary pair with 2SD757 and 2SD758 * >$ U ^ T 1. ^ — X

Contextual Info: Transistors 2SB0710 2SB710 , 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2SB0710A Collector-emitter voltage 2SB0710

2SB0710A

Abstract: 2SB0710 2SB710 2SB710A 2SD0602 2SD0602A 2SD602 2SD602A
Contextual Info: Transistor 2SB0710, 2SB0710A 2SB710, 2SB710A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0602 (2SD602) and 2SD0602A (2SD602A) Unit: mm • Features Collector to 2SB0710 emitter voltage 2SB0710A –25 –50 VEBO –5 V

transistor npn 100w amplifier

Contextual Info: PANASONIC INDL/ELEK -CIO 12E D t.T3aäSa OD ID Mbl 1 Silicon Epitaxal Base Mesa Transistor T - 33-2.1 2SB713 PNP 2SD751 (NPN) TOP-3 Package (See Page 36 For Dimensions) 2SB713 (PNP) Absolute Maximum Ratings (Ta=25°C) Hem Collector-Base Voltage Collector-Emitter Voltage

WR1 marking code

Abstract: transistor marking wr1 sot-23 2SD602 2SD602A WR1 SOT23 transistor marking wr1 2SB710 2SB710A marking code WR1
Contextual Info: 2SD602, 602A NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z SOT-23 3 Collector For general amplification Complementary to 2SB710 and 2SB710A Low collector to emitter saturation voltage VCE sat

2SB716

Abstract: 2SD756 2SB715 2SB716A 2SD755 2SD756A DSA003732
Contextual Info: 2SB715, 2SB716, 2SB716A Silicon PNP Epitaxial Application • Low frequency high voltage amplifier • Complementary pair with 2SD755, 2SD756 and 2SD756A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB715, 2SB716, 2SB716A Absolute Maximum Ratings Ta = 25°C

2SD756

Abstract: 2SD756A 2sd756 e Hitachi DSA002756
Contextual Info: 2SD755, 2SD756, 2SD756A Silicon NPN Epitaxial Application • Low frequency high voltage amplifier • Complementary pair with 2SB715, 2SB716 and 2SB716A Outline 2SD755, 2SD756, 2SD756A Absolute Maximum Ratings Ta = 25°C Item Symbol 2SD755 2SD756 2SD756A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0602A (2SD602A) Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0710A (2SB710A) Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95)

2SD602

Abstract: 2SB710A SD602A 2SB710 2SD602A K150 SC-59A ice5 2SB710 S 2SB710 R
Contextual Info: 2SB710, 2SB710A 2 S B 7 1 0 , 2 S B 7 1 0 A \/~ ? is — j - ] f 2 / S i PNP Epitaxial Planar v ij zi y PN P x fcf£ - S t e f f i / G e n e r a l A m p lifie r 2SD 602, 2 S D 6 0 2 A £ 13 > ~ f x) > U / C o m p le m e n ta r y P a i r w ith 2SD 602, 2 S D 602A

2SD836

Abstract: 2SB750 2SB750A 2SB710A 2SD602 2sd836a 2SB71 2SB710 2SB726 2SD602A
Contextual Info: PA NASONIC INDL/ELEK-CSEMI} 75C D | ^ 3 5 0 5 4 h * T - • ^ * 1 5 0000045 4 2SB710, 2SB710A 2SB710, 2SB710A '> U Z] > P N P x tf £ ¿ r ì / T — Si P N P Epitaxial Planar — Ä S IM te ffl/ G e n e r a l A m p l i f i e r 2SD 602, 2SD 602A t > Z f l S > 2 ')/

b716

Abstract: 2sb716 2SB716A
Contextual Info: 2SB715,2SB716,2SB716A Silicon PNP Epitaxial HITACHI Application • Low frequency high voltage am plifier • Complementary pair w ith 2SD755, 2SD756 and 2SD756A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 2 207 2SB715, 2SB716, 2SB716A Absolute Maximum Ratings Ta = 25°C

2SD756A

Abstract: 2sd756
Contextual Info: HITACHI 2SD755, 2SD756, 2SD756A SILICON NPN ÊPiTAXIAt, rdvV^ReOUcNcVHTGH KA "AG G AMPI 1FIER Complementary pair with ?S37ls 2SB7IS and 2SB716A J. 5>vt w ir • JEOeC TO-92 MOD. • ABSOLUTE MAXIMUM RATINGS «I .i 2VC) ’Symbol ¡te.-. r _ _ ?SD _ 5 >r>75ri