1N7001
Abstract: 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90
Contextual Info: - 248 - f M € tt € ft * V 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 IR IR IR IR
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OCR Scan
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2N6755
T0-204AA
2N6756
O-204AA
2N6757
2N6758
2N6659
O-205AF
1N7001
2N6155
4900 SIEMENS
1N7000
BUZ54
2N6759
2n6800
2N6823
BUZ211
IXTP4N90
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PDF
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2N6796 HARRIS
Abstract: 2n6796 jantx qpl-19500 2N6756 2N6796 diode332 2N6770 JANTX 2N6897
Contextual Info: Standard Power MOSFETs 2N6796 F ile N u m b e r 1594 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 8.0A, 100V ros on = 0.18 fi Features: • SOA is po w e r-d issip ation lim ite d
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OCR Scan
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2N6796
2N6796
O-205AF
O-2I35AF
2N6800
T0-205AF
2N6796 HARRIS
2n6796 jantx
qpl-19500
2N6756
diode332
2N6770 JANTX
2N6897
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PDF
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2N7003
Abstract: 2N7009 2N7011 2N7073 G50-12C1 2N6755 2N6756 2N6757 2N6758 2N6759
Contextual Info: - 248 M - € 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 f- +• */!/ * tt € f f t * £ ÍS T a = 2 5 '0
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OCR Scan
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2N6755
T0-204AA
2N6756
O-204AA
2N6757
2N6758
O-254AA
2N7003
2N7009
2N7011
2N7073
G50-12C1
2N6759
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PDF
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2N6796
Abstract: 2N6795 2N6195 2N679B 2N6196 LE17 diode 60V 8A
Contextual Info: 37E » SEMELAB LTD I 0133107 □□□□313 1 T-39-09 JAN 0 5 1988 SEM ELAB 2N 6795 2N 6796 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm APPLICATIONS • FAST SWITCHING • MOTOR CONTROLS • POWER SUPPLIES P IN 1 -S o u rc e P IN 2 -G a te
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OCR Scan
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D0DD313
2N6795
2N6796
2N6795
2N6796
Tc-25
2N6195
2N679B
2N6196
LE17
diode 60V 8A
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PDF
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2N6768
Abstract: 2N6768 JANTX 2N6767
Contextual Info: Standard Power M O S F E T s_ 2N6767, 2N6768 File N u m b e r 1898 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 12A and 14A, 350V - 400V rDS om = 0.4Q and 0.30
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OCR Scan
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2N6767,
2N6768
2N6767
2N6768
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6768 JANTX
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PDF
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mosfet 2n6788
Abstract: 2n6800 2N6788 LH0063 QPL-19500 2N6792 JANTXV 2N6788 JANTXV
Contextual Info: Standard Power MOSFETs 2N6788 File Number 1593 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE o 6.0A, 100V rDs on = 0.30 Ü Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds
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OCR Scan
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2N6788
2N6788
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
mosfet 2n6788
LH0063
QPL-19500
2N6792 JANTXV
2N6788 JANTXV
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PDF
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THOMSON DISTRIBUTOR 58e d
Abstract: 9026873 IRFF121 THOMSON 58E THOMSON 58E CASE OUTLINE THOMSON DISTRIBUTOR 2N6782 IRFF014 IRFF034 IRFF111
Contextual Info: THOMSON/ DISTRIBUTOR HEXFET SñE D • li^ J Rectifier Hermetic Package TO-39 N-Channel Part Number 1 RDS on On-State Resistance (Ohms) Ip Continuous Drain Current 25eC Case (Amps) 1dm Pul» Drain Current (Amps) Pq Max Power Dissipation (Watts) 25 65 15 25
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OCR Scan
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IRFF014
T0-205AF
IRFF034
IRFF113
IRFF111
IRFF123
IRFF121
IRFF133
IRFF131
IRFF112
THOMSON DISTRIBUTOR 58e d
9026873
IRFF121
THOMSON 58E
THOMSON 58E CASE OUTLINE
THOMSON DISTRIBUTOR
2N6782
IRFF034
IRFF111
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PDF
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2N6901
Abstract: mosfet 2n6788 2N6802 metal detector WITH IC 555 550D 2N6756 LH0063 QPL-19500
Contextual Info: Standard Power MOSFETs 2N6802 File Number 1905 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 3.5A, 500V r D S o n —"1.50 N-CHANNEL ENHANCEMENT MODE o Features: • m ■ ■ ■ SOA is power-dissipation limited
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OCR Scan
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2N6802
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
MIL-S-19500/
2N6901
mosfet 2n6788
metal detector WITH IC 555
550D
2N6756
LH0063
QPL-19500
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PDF
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2N6758
Abstract: 2N677 2N6766 JANTX mosfet 2n6788 qpl-19500 2N67 2N6756 2N6757 2N6758 JANTX
Contextual Info: Standard Power MOSFETs 2N6757, 2N6758 File Number 1587 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 8A and 9A, 1 5 0 V -2 0 0 V rDs on = 0.4 Q and 0.6 O Features: • SOA is pow er-dissipation lim ited
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OCR Scan
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2N6757,
2N6758
50V-200V
2N6757
2N6758
2N6796
O-2I35AF
O-205AF
2N6800
2N677
2N6766 JANTX
mosfet 2n6788
qpl-19500
2N67
2N6756
2N6758 JANTX
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PDF
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2N6762 JANTX
Abstract: 2N6762 2N6903 2N6162 2n6800 2N6761 2N6898 2N6904 power mosfets to 204aa 2N6898 JANTXV
Contextual Info: Standard Power M OSFETs File Number 1589 2N6761, 2N6762 N-Channel Enhancement-Mode Power Field-Effect Transistors 4.0A and 4.5A, 450V - 500V rD s on = 1.5 f i and 2.0 O o Q Features: • ■ ■ ■ ■ SOA is power-dissipation lim ited Nanosecond sw itching speeds
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OCR Scan
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2N6761,
2N6762
2N6761
2N6762
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6762 JANTX
2N6903
2N6162
2N6898
2N6904
power mosfets to 204aa
2N6898 JANTXV
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PDF
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406J
Abstract: JD 1801 irfc230 IRFC430 IRFC9230 IRFC130 2N6756 IRFC110 2N6847 irfc250
Contextual Info: 27 Katrina Road Chelmsford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A POW ERHO USE All devices are available screened to TX, TXV, or S Level equivalent. Reference the High-Reliability Screening table for details. Contact your local Representative or STC
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OCR Scan
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2N6756
2N6758
2N6760
2N6762
2N6768
2N6770
IRFC130
IRFC230
IRFC330
IRFC430
406J
JD 1801
IRFC9230
IRFC110
2N6847
irfc250
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PDF
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