IRFF024 Search Results
IRFF024 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IRFF024 | International Rectifier | HEXFET Power Mosfet | Original | 134.6KB | 7 | ||
| IRFF024 | Semelab | N-Channel MOSFET in a Hermetically Sealed TO39 Metal Package | Original | 12.12KB | 1 |
IRFF024 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
IRFF024Contextual Info: IRFF024 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET. |
Original |
irff024o205af11-oct-02 | |
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Contextual Info: International sslRectifier Government and Space hexfet power m o sfets Hermetic Package N-Channel Part BV d s s Number V IRFF024 RDS(on) (Ohms) •d @ Tq = 100°C R thJC Max. Pd @ Tc = 25°C Outline (A) (A) (K/W) (W) Number (1) 60 0.15 8.0 IRFF110 100 0.60 |
OCR Scan |
irff024irff1102n6782jantx2n6782+6 | |
IRFF024Contextual Info: PD - 90657 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF024 60V, N-CHANNEL Product Summary Part Number IRFF024 BVDSS 60V RDS(on) 0.15Ω ID 8.0A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. |
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o-205afirff024swit252-7105 | |
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Contextual Info: IRFF024 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)8.0 I(DM) Max. (A) Pulsed I(D)5.7 @Temp (øC)100# IDM Max (@25øC Amb)32 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20# Minimum Operating Temp (øC)-55 |
Original |
irff024 | |
IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
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30am-544-0-1737-2comdb8029cirf460+9 | |
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Contextual Info: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical |
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2N6802 JANTXContextual Info: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d es c rib e s 19 d ev ic e s , 12 N -C h a n n e l and 7 P -C h a n n e l, all c o n tain e d in the T 0 - 2 0 5 A F T O -3 9 p ac k a g e . This d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical |
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i-2002n6802 jantx | |
2N7334
Abstract: irfg9110 H24 SMD
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irhe7110irhe8110irhe7130irhe8130+9 | |
IRF540
Abstract: T0-220
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irf452irf453irf460irf520+8 | |
Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
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2c4152c4252c4442c746+16 | |
2N7550
Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
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Original |
2n75502n75492n75452n7476t1+6 | |
IRFF320Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numbtr BVDSS 2 (3) (Vdn) R0S(on) (Ohm) N)0 TC-2S* (Amp«} Iq O Tc-IOB* (Amp*) Pq O Tc*2F (Watts) Fax-onDemand Number Case Style, (Case Outline) (1) HEXFET Power MOSFETf Hermetic Package, N- a n d P-Channel |
OCR Scan |
jantx2n7222ujantxv2n7222ujantx2n7228ujantxv2n7228u+7 |