2N608 Search Results

MRF221

Abstract: 2N6081
Contextual Info: I MOTOROLA SC XSTRS/R F 4bE b3h?asM oo^msa ? D MOTOROLA SEMICONDUCTOR 2N6081 TECHNICAL DATA MRF221 The RF Line 15 W - 175 MHz RF POWER TRANSISTORS NPN SILICON RF POWER TRANSISTORS NPN SILICON . . . designed fo r 1 2.5 V o lt V H F large-signal power am plifier applica­

MRF221

Abstract: 2N6081
Contextual Info: MOTOROLA SEMICONDUCTOR 2N6081 MRF221 TECHNICAL DATA The R F Line 15 W - 175 MHz RF POWER TRANSISTORS NPN SILICON RF POWER TRANSISTORS NPN SILICON . . . designed for 12.5 Volt VH F large-signal power amplifier applica­ tions required in commercial and industrial equipment operating to

MRF648

Abstract: TPV3100 TPV-3100 TP9383 SD1393 MRF238 MOTOROLA MRF188 TP9380 mrf10500 mrf422
Contextual Info: June 1999 ST CROSS REFERENCE WITH MOTOROLA INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE 2N5944 SD1134 MRF859 SD1423 2N5945 2N5946 2N6082 2N6084 2N6439 MHW912 MHW914 MHW916 MRA1600-2 MRF134 MRF136 MRF136Y MRF137

Motorola 2N6083

Abstract: 2N6083
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6083 The RF Line 30 W - 175 MHz RF POWER TRANSISTOR N P N S IL IC O N IMPN SILIC O N RF POWER T R A N SIS T O R S . . . designed for 12.5 V o lt V H F large-signal amplifier applications required in commercial and industrial equipment operating to

2N6084 equivalent

Abstract: MRF-226 MRF221 MRF226
Contextual Info: MRF221 See 2N6081 MRF224 (See 2N6084) MOTOROLA SEM ICONDUCTOR TECHNICAL DATA T he R F Line 13 W - 225 MHz RF POWER TRANSISTO R NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed for 12.5 Volt large-signal power amplifier applica­ tions in com munication equipm ent operating at 225 MHz.

mrf224

Abstract: 2N6084
Contextual Info: MOTOROLA SEMICONDUCTOR 2N6084 MRF224 TECHNICAL DATA T h e RF Line 40 W - 175 MHz RF POWER TRANSISTORS NPN S IL IC O N NPN SILICON RF POWER TRANSISTORS . . . designed for 12.5 V o lt V H F large-signal am plifier applications required in commercial and industrial equipment operating to

2N6084

Abstract: 2N6081 2N6080 2N6083 2n6080 RF 2N6082 n608 2N0080 2N60B SD1229-08
Contextual Info: ñ / t ! l pí £ [ sA A M iV ItC fO S G if i t H9HH^ ! • P rowg re sw w » » » » s P o w e re d b y T ec h no log y 2N6080 2N6084 140 C o m m erc e D rive M o n tg o m eryville , PA 18936-1013 Tel: (2 1 5 6 3 1 -9 8 4 0 RF & MICROWAVE TRANSISTORS

2N6080

Abstract: 2N6081 2N6084 2N6083
Contextual Info: S G S-THOM SON _ _ DMC I 7 ^ 5 3 ? Q 0 Q D DT 7 SOLID STATE MICROWAVE 4 | _ D _7% ’ ?5l7 2N6080 2N6081 2N6082 2N6083 2N6084 : THOMSON-CSF COMPONENTS CORPORATION : MontgomeryviUe, PA 18936 • 215 362-8500 ■ TWX 510-661-7299 VHF COMMUNICATIONS TRANSISTOR

KT704

Abstract: MJ8501 2S0200 BU205 HITACHI 2sc935 MJE132 KT704A MJE1320 TIPL770 PT8851A
Contextual Info: POWER SILICON NPN Item Number Part Number >= I C 20 PT8851A MRF262 S01014•6 2N6081 MRF433 NA41UX NA41UG NA41UH ~~:~~r 25 30 2N6198 2N6198 2N6198 2S01077 2N2339 2N1701 2N6391 2N6391 ~~~J85 35 40 BLY15 BOY16 BOY16 MM3006 MM3007 2N4272 2N4273 2N6477 ~~~~~5

Motorola 2N6083

Abstract: sem 2106 2N6083
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b3tj?2S4 00^4120 MOTOROLA Ô MOTb T -3 5 ~ u • SEM ICONDUCTOR i TECHNICAL DATA 2N6083 The R F Line 30 W - 175 MHz 2 RF POWER TRANSISTOR NPN S IL IC O N NPN SILICON RF POWER TRANSISTORS . . . designed for 1 2.5 V o lt V H F large-signal am plifier applications

Motorola 2N6080

Abstract: 2N6080 motorola 18310
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 2N6080 The RF Line 4.0 W - 175 MHz RF POWER T R A N SIST O R NPN SILIC O N RF POWER T R A N SIST O R NPN SILICON . . . designed for 12.5 V o lt V H F large-signal power amplifier applica­ tions required in military and industrial equipment operating to

Contextual Info: MOTOROLA SC XSTRS/R 4bE D F b3b?2S4 o o m i n 7 " F 3 3 -C Í7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6080 The RF Line 4.0 W - 175 MHz R F POW ER T R A N S IS T O R N P N S IL IC O N R F P O W E R T R A N S IS T O R NPN SILICON designed fo r 12.5 V o lt V H F large-signal pow er a m plifie r a pplica ­

2n6082

Contextual Info: T -3 2 H I MOTOROLA SC XSTRS/R F MbE D b 3 b ?2 S 4 00*14153 2 « N O T b MOTOROLA I SEMICONDUCTOR ^ TECHNICAL DATA 2N6082 The R F L in e 25 W - 175 M H z RF POWER TRANSISTOR NPN SILICO N NPN S IL IC O N R F P O W ER T R A N S IS T O R S . . . designed for 12.5 V o lt V H F large-signal am plifier applications

2n6080

Abstract: 2N6083 2N6081 2N6084 2N6082 Thomson-CSF
Contextual Info: SOLID STATE MICROWAVE 2N 6 08 0 2N6081 2N 6082 2N 6083 2N 6 08 4 THOMSON-CSF COMPONENTS CORPORATION MontgomeryyiUe, PA 18936 • 215 362-8500 ■ TWX 510-661-7299 VHF COMMUNICATIONS TRANSISTOR DESCRIPTION: This line o f epitaxial silicon NPN-planar transistor is designed primarily

IC SEM 2105

Abstract: RF POWER TRANSISTOR NPN, motorola transistor 0132 2N
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA 2N6082 The RF Line 2 5 W - 175 M H z RF POWER TRANSISTOR NPN SILIC O N NPN S IL IC O N R F POW ER T R A N S IS T O R S . . . designed fo r 12.5 V o lt V H F large-signal a m plifier applications required in commercial and industrial equipm ent operating to

2n5088

Abstract: 2N5089 2n6088 transistor 2N5088 2n5088 transistor 2N608
Contextual Info: 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Em itter Voltage: V ceo= 2N5088:30V 2N6088: 25V • Collector Dissipation: Pc max '=625mW ABSOLUTE MAXIMUM RATINGS <TA=25t:) C haracteristic Collector-Base Voltage Collector-Em itter Voltage

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

MRF660

Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040

BD561

Abstract: BD585 PT9788A 8D434 BDX24 2SD810 BD186 motorola MJE2480 BD163 BD272
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) hFE fT ICBO t0N T(CE)Mt Max PD Max Max ON) Min (Hz) (A) (8) Max (Ohms) Toper Max CO Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . -10 MRF222 MRF223

2n261 rca

Abstract: 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475

2n6080

Abstract: SD 1062 transistor 2N3924 sd 3632
Contextual Info: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS GiflO Ml(LgmM § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022 VCC (V

9552N

Abstract: 8802n 5504L 2N3632 2N44 THB94 XO-72 SD1577 SD1574 CB299
Contextual Info: 130. 230 MHz C L A S S C FOR FM MOBILIE A P P L IC A T IO N S Vcc PACKAGE TYPf C O N F IG . V ^out min (W ) fo Pin (M H z) (W) Gp min (dB) 150 175 175 175 150 0,1 0,1 0,25 0,79 0,22 7 8 8 5 11 _ — — — — 175 175 175 175 175 175 175 175 175 175