2N50 Search Results

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2N5067

Abstract: tl 5069
Contextual Info: T Y P E S 2 N 5 0 6 7 , 2N5068. 2N5069 N-P-N S IN G L E -D IF F U S E D SILICON PO W ER T R A N S IS T O R S TYPES 2N5067, 2N5068, 2N 5069 BULLETIN NO. DL-S 7211663, JANUARY FOR POWER-AMPLIFIER AND SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N4901 THRU 2N4903

Contextual Info: TOS HIB A -CDISCRETE/OPTOi DE | T G ci7aS0 OODflOME ñ Sh ’ :t\ , 90972SO TOSHIBA {DISCRETE/OPTO 2N5039 56C 080^2 _ _ Io “ IC ~ V CE h a VBE COMMON EMITTER T c= 2 5’C 3 - 2 *> .#«• -n * * i —. 4 .« ,• 05 as 'j ai ao5

2N5001

Abstract: TCA 875 MW-82 2N5149 2N4999
Contextual Info: TYPES 2N4999. 2N5001, 2N5147, 2N5149 P-N-P SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TRAN SISTO RS W ITH CO M PUTER-D ESIG NED IS O TH E R M A L G EO M ETR Y • For Complementary Use With 2N 4998, 2N 5000, 2N 5148, and 2N 5150 • 6 mJ Reverse Energy Rating with lc = 5 A and 4 V Reverse Bias

TIC64

Abstract: TIC62 2N5060 TIC60 thyristor+st+103
Contextual Info: TYPES 2N5060 THRU 2NS064. TIC60 THRU TIC64 P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS SILECTt THYRISTORSt 800 mA DC • 30 thru 200 VOLTS 03 H c-< rr* 2 m mw H to Z S O S mechanical data These thyristors are encapsulated in a plastic com pound specifically designed fo r this purpose, using a highly

2N5050

Abstract: 2N5051 2N5052 2N4910 2N4911 2N4912
Contextual Info: Inchange Semiconductor Product Specification 2N5050 2N5051 2N5052 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・High breakdown voltage ・Excellent safe operating area APPLICATIONS ・Designed for driver circuits,switching and amplifier applications

2N5064G

Abstract: 2n5060 SCR 2N5060 2N5060G SCR 2N5060 applications
Contextual Info: 2N5060 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

2N5004

Abstract: 2N5002
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/534 DEVICES LEVELS 2N5002 2N5004 JAN JANTX JANTXV JANS

2N5050

Abstract: 2N5051 2N4910 2N4911 2N5052 2N4912
Contextual Info: Product Specification www.jmnic.com 2N5050 2N5051 2N5052 Silicon NPN Power Transistors DESCRIPTION ・・With TO-66 package ・High breakdown voltage ・Excellent safe operating area APPLICATIONS ・Designed for driver circuits,switching and amplifier applications

2N424

Abstract: 2N1722 2N389 to-53 2N389A 2N5067 2N5068 2N5630 2N5631 2N5632
Contextual Info: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2

2N5006

Abstract: 2N5008 2N5288 2N5317 2N5319 2N5731 2N5957 WALTA
Contextual Info: General Transistor Corporation CASE le max = 10-20A V c e o ( s u s ) = 80-100V NPN Power Transistors ISOLATED COLLECTOR VCEO (aua) M 1C (mm) (A) 2N5006 2N5008 2N5288 2N5289 BO BO 100 100 10 10 10 10 30-90 @5/5 70-200 @ 5/5 30-90 @5/5 70-200 @ 5/5 1.5 @ 10/1

2N508

Abstract: 2N5088 2N5088 MOTOrola 2N5089 2N5089 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N5088/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors 2N 5088 2N 5089 NPN Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol 2N508 8 2N508 9 Unit VCEO 30 25 Vdc C o lle c to r-B a s e Voltage

PN4250

Abstract: 2N5086 MPS6523 MPSH81 PN4249 PN4250A
Contextual Info: This I D" Material In . Discrete POWER & Signal Technologies □ National t-1 Se mi c o n d u c t o r ' “ fc-1 PNP Low Level Amplifiers Lü □ a Copyrighted □ jr □ x: -J V Device No. 2N5086 ru -C By Its Respective ro ho TO-92 92 2NS087 TO-92 (92)

2n 5088 transistor

Abstract: SOT-23 CEB
Contextual Info: 2N5088/89 / MMBT5088/89 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier

2N5089

Abstract: 2N5087 2N5086
Contextual Info: 2N5086 _ 2N 5087 _ - PHILIPS INTERNATIONAL SbE » • 711005b D0M2t.74 751 « P H I N " T -Z ^ ^ f SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P small-signal transistors in plastic T O -9 2 envelope intended fo r low -noise stages in au d io equipm ents

2N5004

Abstract: 2N5005 2N5005J 2N5005JV 2N5005JX
Contextual Info: 2N5005 Silicon PNP Transistor Data Sheet Description Applications Complement to the 2N5004 • High-speed power-switching • Power Transistor • PNP silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E

TO111

Abstract: TO61 U 114
Contextual Info: G27 ELECTRONICS, INC. \ -15 COLLECTOR CURRENT = 10 AM PS NPN TYPES— ConWnued C ue VCBO Volt 2N3920 2N4070 2N4071 2M 150 JAN 2N4150 JT X • ÎN4150 2N4301 2N4347 2N4348 2N5006 T O -3 T O -3 T O -3 T O -5 T O -5 120 120 200 100 100 60 100 150 80 80 6 8

2N5087

Abstract: transistor 2N5087
Contextual Info: ON Semiconductort Amplifier Transistor 2N5087 PNP Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 50 Vdc Collector–Base Voltage VCBO 50 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous

SCR 2N5060

Abstract: SCR 2N5060 applications 2N5061 2N5060 SCR 2N5061 scr 2N5062 VAK marking 2N5060RLRA 2N5060RLRAG 2N5062
Contextual Info: 2N5060 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

Contextual Info: General Transistor Corporation CASE le max = 10-20A NPN Power Transistors V c e o (s u s ) • ISOLATED COLLECTOR VCEO VCE(SÀT) IC/1B (V0A/A) M 1C (mu) (A) 2N5006 2N5008 2N5288 2N5289 B0 80 100 100 10 10 10 10 30-90 @ 5/5 70-200 @ 5/5 30-90 @5/5 70-200 @5/5

2N5088 equivalent

Abstract: 2N5088 2N5089
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS E 2N5088 2N5089 TO-92 CBE BC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS VCBO 35 30 V Collector -Base Voltage

Contextual Info: General Transistor Corporation SMALL SIG N A L TRANSISTORS • ■ ■ NPN TRANSISTORS FOR RF APPLICATIONS VCEO V M/OtNUH RATINI3S le (mA) Ptol (mW) 2N91B 2N2857 2N3600 2N3839 15 15 15 15 50 40 50 40 200 200 200 200 2N5031 2N5032 2N5179 2N5842 10 10 12 10

2N5066

Abstract: 2N506
Contextual Info: t\N E S 2N5066 SILICON EPITAXIAL JUNCTION NPN SWITCHING TRANSISTORS G EO M ET R Y 414, (2N5066 ULTRA LOWrEC (sat) • • • • rtc (satl 4 Ohms T Y P IC A L LOWCeb LOW LEA KAG E HIGH BV ebo ELECTRICAL DATA ABSOLUTE MAXIMUM RATINGS SYMBOL 2N 5066 UNITS

Contextual Info: Lead Mounted Transistors NPN Transistors/TO-92 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 VCEO Volts 25 25 30 40 40 40 60 80 160 300 hpE @ V ce/Ic V/mA 120-360 100-750 350-1400 100-300 100-300 100-300 min. 50