2N506 Search Results

2N5067

Abstract: tl 5069
Contextual Info: T Y P E S 2 N 5 0 6 7 , 2N5068. 2N5069 N-P-N S IN G L E -D IF F U S E D SILICON PO W ER T R A N S IS T O R S TYPES 2N5067, 2N5068, 2N 5069 BULLETIN NO. DL-S 7211663, JANUARY FOR POWER-AMPLIFIER AND SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N4901 THRU 2N4903

TIC64

Abstract: TIC62 2N5060 TIC60 thyristor+st+103
Contextual Info: TYPES 2N5060 THRU 2NS064. TIC60 THRU TIC64 P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS SILECTt THYRISTORSt 800 mA DC • 30 thru 200 VOLTS 03 H c-< rr* 2 m mw H to Z S O S mechanical data These thyristors are encapsulated in a plastic com pound specifically designed fo r this purpose, using a highly

2N5064G

Abstract: 2n5060 SCR 2N5060 2N5060G SCR 2N5060 applications
Contextual Info: 2N5060 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

2N424

Abstract: 2N1722 2N389 to-53 2N389A 2N5067 2N5068 2N5630 2N5631 2N5632
Contextual Info: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2

SCR 2N5060

Abstract: SCR 2N5060 applications 2N5061 2N5060 SCR 2N5061 scr 2N5062 VAK marking 2N5060RLRA 2N5060RLRAG 2N5062
Contextual Info: 2N5060 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

2N5066

Abstract: 2N506
Contextual Info: t\N E S 2N5066 SILICON EPITAXIAL JUNCTION NPN SWITCHING TRANSISTORS G EO M ET R Y 414, (2N5066 ULTRA LOWrEC (sat) • • • • rtc (satl 4 Ohms T Y P IC A L LOWCeb LOW LEA KAG E HIGH BV ebo ELECTRICAL DATA ABSOLUTE MAXIMUM RATINGS SYMBOL 2N 5066 UNITS

2N5064

Abstract: 2N5060 2N5062 SILICON CONTROL RECTIFIER 2N5063 "Silicon Controlled Rectifier" 2N5061/2N5062 2N5064 equivalent 2N5061 2N5062
Contextual Info: Central 2N5060 THRU 2N5064 TM Semiconductor Corp. SILICON CONTROLLED RECTIFIER 0.8 AMP, 30 THRU 200 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5060 series types are epoxy molded Silicon Controlled Rectifiers designed for control systems and sensing circuit applications.

SCR GE C5u

Abstract: SCR C103 specification of IC 2N1597 scr c108 7N870 GE scr C5u scr C203 2N2346 SCR C106Y1 2N2322-29
Contextual Info: C3 GE TYPE 2N 877-81"1 JEDEC C1 03 C203 - 2N5060-64 C5 30-200 30 400 2N2322-29 C6 07 - 2N 2344-48 25-400 25-200 - C106 C107 C108 - - - 50 400 15-600 1 *« K . 15-600 2N1595-99,A ELECTRICAL SPECIFICATIONS 30-200 VOLTAGE RANGE ? 5 400 FORWARD CONDUCTION •t r m s :i Max. RM S on-state current (A

2N5066

Abstract: TELEDYNE CRYSTALONICS 2N3677 veam
Contextual Info: U L T R A LOWrEC sat 2N3677 2N5066 SILICON EPITAXIAL JUNCTION PNP/NPN SWITCHING TRANSISTORS G E O M E T R Y 292, PG. 57 (2N3677) G E O M E T R Y 414, PG. 57 (2N5066) • • • • • COMPLEMENTARY TYPES 2N3677 (PNP) 2N5066(NPN) rEc ^sat* 4 Ohms TYPICAL

2N3713

Abstract: 2n3055 complement 2N5068 2N3055 2N3714 2N3789 2N3790
Contextual Info: TRANSISTORS—POWER NPN TO—3 PACKAGE VOLTS *c AMPS MIN MAX 2N5067 40 5 20- 80 @ 1.0 1.5 @ 5 87.5 4.0 2N4901 2N4913 40 5 25 - 100 @ 2.5 1.5 @ 5 87.5 4.0 2N4904 2N5301 40 30 15- 60 @ 2.0 @ 20 2.0 2N4398 2N5068 60 5 20- 80 @ 15 1.0 1.5 @ 5 87.5 4.0 2N4902 2N4914

2N5066

Abstract: RY414
Contextual Info: Back to Bipolar Small Signal 2N5066 SILICON EPITAXIAL JUNCTION NPN SWITCHING T RAN SISTO RS G EO M ET R Y 414, 2N5066 ULTRA LOWrEC (sat) • rtc (satl 4 Ohms T Y P IC A L • LOWCeb • LOW LEA KAG E • HIGH BV ebo ELECTRICAL DATA ABSOLUTE MAXIMUM RATINGS

GE C106Y

Abstract: SFOR1A42 TO-202AB To226AB DRA03A 2SF101B TO202AB 2SF101 SN200 HS34S
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number SCRs, VDRM 5 10 MMBS5060 BRX44 BRX44 C103Y C203Y S1Y BRY55•30 BRY55S30 MCR102 2N5060 ~~~gg1 15 20 S031E C205Y C205Y C205Y 2N1876A 2N1876 2N1870 2N1870A ~~3~1~1 25 30 2N3559 C106Y SN200 2N6332 C107Y2 C107Y4

2N6505

Abstract: MAC9D 2N6404 thyristor C106d/2N6027 MCR68-2
Contextual Info: CHAPTER 4 Index http://onsemi.com 355 Thyristor Device Index Device Number 2N5060 Page Device Number Page Device Number Page MAC12D 15 , 91 MAC4DLM 148 20 MAC12HCD 15 , 81 MAC4DLM−001 148 2N5061 10 , 20 MAC12HCM 15 , 81 MAC4DLM−1 13 2N5062 10 , 20 MAC12HCN

MAC12SM

Abstract: MCR100-8 thyristor C106M MAC12N Mcr22-8 301 maC97A8 MCR106-6 MAC22 mac97
Contextual Info: SCRs Silicon Controlled Rectifiers Style 4 K A K K G TO−92 Note 1 (TO−226AA) Case 029 Style 10 0.8 30 2N5060 60 2N5061 100 2N5062 200 2N5064 100 MCR100−3 200 MCR100−4 400 MCR100−6 600 MCR100−8 200 A SOT−223 Case 318E Style 10 G A K TO−225AA

Contextual Info: U nc, 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 301 376-2922 (212)227-6005 FAX: (201) 376-8960 ULTRA LOWr.c (sat) SILICON EPITAXIAL JUNCTION PNP/NPN SWITCHING TRANSISTORS COMPLEMENTARY TYPES 2N3677 (PNP) 2N5068INPN) rgc ''»<> 4 Ohms TYPICAL

Contextual Info: DISCRETE SEMICONDUCTORS '$7$ 6+ 7 2N5064 Thyristor sensitive gate Product specification October 1997 1;3 Semiconductors Product specification Thyristor sensitive gate GENERAL DESCRIPTION Glass passivated sensitive gate thyristor in a plastic envelope, intended for use in general purpose

BR203

Abstract: BR303 F0126 MCR22-006
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TMpMCTOpbl C O pTM pO B K a n o T O K y Kofl: Tok [A] HanpnweHMe [B] Tok ynpaBn. dU/dt [mA] [B/mkc] BR101 BT169D-PHI 2N5064 BRX49 BT149D BT149G MCR100-8 0,2 0,5 0,8 0,8 0,8 0,8 0,8 50 400

2N1620

Abstract: 2N1211 N5069 2N1886 2N2032 2N5631 JANTX 2N389 2N389A 2N5067 2N5068
Contextual Info: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2

Contextual Info: 2N5067 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N5061

Abstract: 2n5060 thyristor 2N5060 MOTOROLA 2N5064 2N5062 2N5060 2N5060-D Motorola 2n5060 2N5061/2N5062 2n5062 datasheet free download
Contextual Info: MOTOROLA Order this document by 2N5060/D SEMICONDUCTOR TECHNICAL DATA 2N5060 2N5061 2N5062 * 2N5064 * Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors *Motorola preferred devices . . . Annular PNPN devices designed for high volume consumer applications such as

TA112

Contextual Info: 2N5060 thru 2N5064 S ilico n C o n tro lle d R ectifiers Reverse B lo c k in g Triode T hyristors . . . A n n u lar P N P N d evic e s d esig n ed for high vo lu m e co n su m e r ap p licatio ns such as relay and lam p drivers, sm all m o tor controls, gate d rivers for larger thyristors,

2N5060

Abstract: SCR 2N5060 applications SCR 2N5060 2n5062 free 2n5062
Contextual Info: 2N5060 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

2N5067

Contextual Info: 2N5067 MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)

Contextual Info: Thyristor Selection Guide SELECT GUIDE 15 Metal/Plastic lT AMPS 0.2 @ TC (°C) 25 60 60 60 60 25 25 lTSM (AMPS) 7.5 10 10 10 10 10 10 0.8 * % CASE TO-92 SOT-23 SOT-89 TO-92 SOT-223 VDRM,VRRM (VOLTS) 30 2N5060 BRX44I 60 2N5061 BRX45t 2N5062 BRX46t 100 CMPS5061