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    2N310 Search Results

    2N310 Datasheets (154)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N310
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 69.42KB 1
    2N310
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 83.17KB 1
    2N310
    Unknown GE Transistor Specifications Scan PDF 38.56KB 1
    2N310
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 140.68KB 1
    2N310
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 36.7KB 1
    2N310
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 97.88KB 1
    2N310
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 106.46KB 1
    2N310
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 92.8KB 1
    2N310
    Unknown Vintage Transistor Datasheets Scan PDF 47.84KB 1
    2N3100
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 120.42KB 1
    2N3100
    Unknown Short Form Datasheet and Cross Reference Data Short Form PDF 167.93KB 1
    2N3100
    Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF 77.38KB 1
    2N3100
    Semitronics 700V V[drm] Max., 70A I[T] Max. Silicon Controlled Rectifier Scan PDF 230.27KB 4
    2N3100
    Semitronics Thyristors and Triggers / Silicon Controlled Rectifiers Scan PDF 337.68KB 4
    2N3101
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 120.43KB 1
    2N3101
    Unknown Short Form Datasheet and Cross Reference Data Short Form PDF 176.31KB 1
    2N3101
    Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF 77.38KB 1
    2N3101
    Semitronics 800V V[drm] Max., 70A I[T] Max. Silicon Controlled Rectifier Scan PDF 230.27KB 4
    2N3101
    Semitronics Thyristors and Triggers / Silicon Controlled Rectifiers Scan PDF 337.68KB 4
    2N3102
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 120.43KB 1
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    2N310 Price and Stock

    Central Semiconductor Corp

    Central Semiconductor Corp 2N3107

    - Boxed Product (Development Kits) (Alt: 2N3107)
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    Avnet Americas 2N3107 Box 500
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    Central Semiconductor Corp 2N3108

    - Boxed Product (Development Kits) (Alt: 2N3108)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2N3108 Box 500
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    Central Semiconductor Corp 2N3107 PBFREE

    Transistor GP BJT NPN 60V 3-Pin TO-39 Box - Boxed Product (Development Kits) (Alt: 2N3107 PBFREE)
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    Avnet Americas 2N3107 PBFREE Box 500
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    Mouser Electronics 2N3107 PBFREE 122
    • 1 $8.12
    • 10 $5.43
    • 100 $4.36
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    Central Semiconductor Corp 2N3107 TIN/LEAD

    Transistor GP BJT NPN 60V 3-Pin TO-39 Box - Boxed Product (Development Kits) (Alt: 2N3107 TIN/LEAD)
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    Avnet Americas 2N3107 TIN/LEAD Box 500
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    Mouser Electronics 2N3107 TIN/LEAD
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    Central Semiconductor Corp 2N3108 PBFREE

    Transistor GP BJT NPN 60V 3-Pin TO-39 Box - Boxed Product (Development Kits) (Alt: 2N3108 PBFREE)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2N3108 PBFREE Box 500
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    Mouser Electronics 2N3108 PBFREE 610
    • 1 $9.63
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    2N310 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N4033

    Abstract: 2N3702 2N3794 2N4235 2N3107 2N3115 2N3073 2N3081 2N3108 2N3109
    Contextual Info: Medium Power Amplifiers and Switches TYPE NO. >- C A SE a < _i o CL M AXIM UM R A T IN G S Pd mW •c H V C E (S A T ) FE 'c (A ) V C EO (V ) min max max 'c f T min Cob C O M PLE­ max M EN TA RY TYPE (m A | V CE (V ) (V ) (A ) (MHz) (pF) 2N3073 2N3081 2N3107


    OCR Scan
    2n30732n30812n31072n4032+92n31082n40302n31092n40332n31102n31152n37022n37942n4235 PDF

    2N3109

    Contextual Info: 2N3109 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


    Original
    2n3109o205ad1-aug-02 PDF

    2N3108

    Contextual Info: 2N3108 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


    Original
    2n3108o205ad1-aug-02 PDF

    2N5225

    Abstract: 2N4033 2N5042
    Contextual Info: Medium Power Amplifiers and Switches H,re COMPLE­ C* *T max MENTARY min MHz (M at) TYPE (V) Ic (A) 10 150 100 100 100 10 10 5 5 5 0.4 0.5 0.5 0.5 0.5 0.1 0.15 0.5 0.5 0.5 100 60 150+ 100 100 10 12 20 20 20 2N3108 2N3020 300 300 140 250 150 100 100 150 150


    OCR Scan
    2n37942n39452n40292n4030+82n40312n40322n40332n40362n40372n42342n52252n5042 PDF

    Contextual Info: ,U na. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212) 227-6005 FAX: (973) 376-8960 2N3108-2N3110 GENERAL PURPOSE AMPLIFIERS AND SWITCHES The 2N3108 and 2N3110 are NPN transistors mounted in TO-39 metal package. Thev are intended for large signal, low noise industrial applications.


    Original
    npn2n3108-2n31102n31082n311020mhz PDF

    2N3107

    Abstract: N3107 2n3110 TS37 2N311
    Contextual Info: 30 E D • 7=^537 0031157 ê SGS-THOMSON ^□OML| ï[R] g [MDOi T '3 S -1 < Ì 2N3107/2N3108 2N3109/2N3110 S G S-TH 0 MS 0 N GENERAL PURPOSE AMPLIFIERS AND SWITCHES D ESCRIPTIO N The 2N3107, 2N3108, 2N3109 and 2N3110 are silicon planar epitaxial NPN transistors in Jedec


    OCR Scan
    2n3107/2n31082n3109/2n31102n31072n3108+62n31092n3110t-35-19n3107ts372n311 PDF

    2N3107

    Contextual Info: 2N3107 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


    Original
    2n3107o205ad10/1m1-aug-02 PDF

    2N3108

    Abstract: 2N3107 2N3109 2N3110
    Contextual Info: 2N3107 2N 3108 S SILICON PLANAR NPN G E N E R A L P U RPO SE A M P L I F I E R S A N D S W IT C H E S The 2N 3107, 2N 3108, 2N 3109 and 2N 3110 are silicon planar epitaxial NPIM transistors in Jedec T O -3 9 metal case p rim a rily intended fo r large signal, low noise industrial ap­


    OCR Scan
    2n31072n3108150ma2n3109+12n3110 PDF

    pic 08m

    Abstract: 2N3055-7 2N3171 2N3172 2N3055H 2N3055-5 2N3055-6 2N3055 TO220 to-53 2N3411
    Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N3053SM 2N3054 2N3055 2N3055 CECC 2N3055/5 2N3055/6 2N3055/7 2N3055A 2N3055E 2N3055E CECC 2N3055E-SM 2N3055H 2N3108 2N3109 2N3110 2N3114 2N3167 2N3168 2N3169 2N3170 2N3171 2N3172 2N3173 2N3174


    OCR Scan
    2n3053sm2n30542n30552n3055/5+142n3055/62n3055/72n3055a2n3055epic 08m2n3055-72n31712n31722n3055h2n3055-52n3055-62n3055 to220to-532n3411 PDF

    Contextual Info: 2N3107 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


    Original
    2n3107o205ad10/1m17-jul-02 PDF

    Contextual Info: 2N3108 NPN small signal general purpose amplifier & satureted switch. . 1 of 1 Home Part Number: 2N3108 Online Store 2N3108 Diodes NPN s m all s ignal general purpo s e am plifier & s at uret ed s w it c h.


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    2n3108com/2n3108 PDF

    2N601

    Abstract: TA761 asy26 2n6365 AC188K Low-Power Germanium PNP 2N3371 2N3280 2N369 MXO55GA-4C-20.25M
    Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number 10 15 20 25 30 35 40 2S8186 2Nl129 TA81 TA81 TA81 2S8486 MA1705 MA1705 AC188K AC188K AC188K 2N3371 ACl15 AC154 AC156 ACl13 ASY82 ASY83 TI384 UPI404 2N310 2N215 2N369 2N499 TA761 TA761 TA761 2N2095 2N2964 2N2965


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    2s81862nl1292s8486ma1705+11ac188k2n3371acl152n601ta761asy262n6365low-power germanium pnp2n32802n369mxo55ga-4c-20.25m PDF

    Contextual Info: 2N3107 z * ’“ - th ro u g h 2N3110 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES ¥ X ''«SS« »W v. I CASE TO-39 THE 2N3107 THROUGH 2N3110 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS


    OCR Scan
    2n31072n31102n40322n4030+32n3109800mw150ma PDF

    2N3108

    Contextual Info: 2N3108 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


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    2n3108o205ad17-jul-02 PDF

    2N3406

    Abstract: 2N3055 plastic pic 08m 2N3055-6 2N305A 2N3055 2N3444 2N3680 2N3172 2N3055-7
    Contextual Info: Ô1331Ô7 4ÔE D DDDDM3S SEMELABI 112 ISfILB SEMELAB L T » r * 2 . ? . ö / BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N3036 2N3053 2N3053L 2N305A 2N3055 2N3055/5 2N3055/6 2N3Q55/7 2N3055E 2N3055H 2N3109 2N3110 2N311A 2N3167 2N3168 2N3169


    OCR Scan
    2n303610/10m2n30532n3053l+142n305a2n305520rain2n3055/52n3055/62n3055/72n34062n3055 plasticpic 08m2n3055-62n34442n36802n31722n3055-7 PDF

    4066 Handbook

    Abstract: 2N3103 2n3033 2N3091 2N3093 2N3095 2N3097 2N3098 2N3099 2N3101
    Contextual Info: K1L-S-19500/280A EC 6 .Tannery 197» SUPERSEDING HTL-S-19500/280(NAVY) 2 October 1964 MILITARY SPECIFICATION SEMICONDUCTOR DEVICES, THYRISTOR (CONTROLLED RECTIFIER). SILICON TYPES 2N3091, 2N3093, 2N3095, 2N3097, 2N3098, 2N3099, 2N3101, 2N3103, 2N3105, AND 2N3106


    OCR Scan
    k1l-s-19500/280amtl-s-19500/2802n30912n3093+82n30952n30972n30982n30992n31012n31034066 handbook2n3033 PDF

    Contextual Info: 2N3107 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


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    2n3107o205ad10/1m19-jun-02 PDF

    Contextual Info: 2N3109 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


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    2n3109o205ad19-jun-02 PDF

    2N3107

    Abstract: 2N3108 2N3109 2N3110 2N4030 2N4032 2n31
    Contextual Info: f 2N3107 th ro u g h 2N3110 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES CASE TO-39 THE 2N3107 THROUGH 2N3110 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP


    OCR Scan
    2n31072n31102n40322n4030+62f3109800mvconditi31082n31082n31092n31 PDF

    Contextual Info: 2N3109 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


    Original
    2n3109o205ad17-jul-02 PDF

    Contextual Info: 2N3108 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


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    2n3108o205ad19-jun-02 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan
    ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent PDF

    2N310B

    Abstract: 2N2270
    Contextual Info: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Ptol mW VCEO VCER* M 2N718A 2N720A 2N915 2N916 500 500 500 500 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N1613 2N1711 Typt No. VCE(SAT) hFEO c Ir (MHz) UNMAX (•AI (V) MAX 50*


    OCR Scan
    2n718a2n720a2n9152n916+82n9562n22212n2221a2n22222n2222a2n37002n310b2n2270 PDF

    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Contextual Info: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


    OCR Scan
    2n329a2n3322n3332n334+162n3352n3362n3372n3382n3392n3402n35682n35692n7022n24062n25392n24072n35652n36382n14702n2224 PDF