2SK310 Search Results

Contextual Info: Transistors IC MOSFET SMD Type Product specification 2SK3109 TO-263 Features 30 V +0.1 1.27-0.1 Gate voltage rating Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 Avalanche capability rated +0.1 0.81-0.1 2.54 Built-in gate protection diode +0.2 2.54-0.2

Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK3107 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The 2SK3107 is a switching device which can be driven directly by a 0.3 ±0.05 2.5-V power source. The 2SK3107 has excellent switching characteristics, and is suitable for

D1380

Abstract: 2SK3107 SC-75
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3107 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The 2SK3107 is a switching device which can be driven directly by a 0.1 +0.1 –0.05 0.3 ± 0.05 2.5-V power source.

2SK3109

Abstract: 2SK3109-S 2SK3109-ZJ MP-25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION PART NUMBER PACKAGE 2SK3109 TO-220AB MP-25 switching characteristics, and designed for high voltage 2SK3109-S TO-262 (MP-25 Fin Cut) applications such as DC/DC converter.

Mosfet 100V 50A

Abstract: 2SK3109
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3109 TO-263 Features 30 V +0.1 1.27-0.1 Gate voltage rating Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 Avalanche capability rated +0.1 0.81-0.1 2.54 Built-in gate protection diode +0.2 2.54-0.2 Surface mount device available

Contextual Info: DATA SH EE T MOS FIELD EFFECT TRANSISTOR 2SK3105 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The 2SK3105 is a switching device which can be driven directly by a 4 V power source. The 2SK3105 features a low on-state resistance and excellent

2SK3102-01R

Abstract: 2sk3102 2SK3102-01R equivalent
Contextual Info: 2SK3102-01R FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIS SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof TO-3PF Applications Switching regulators DC-DC converters

nec 2702

Abstract: nec 2501 2SK3108
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3108 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3108 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,

2SK3105

Abstract: marking xa
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3105 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.4 +0.1 –0.05 • Can be driven by a 4 V power source • Low on-state resistance

2sk3102

Abstract: 2SK3102-01R 103 H04 10S3 2sk3102-01
Contextual Info: H04-004-07 1.Scope This specifies Fuji Power MOSFET 2SK3102-01R 2.Construction N-Channel enhancement mode power MOSFET 3.Applications for Switching 4.0utview TO-3PF Outview See to 5/|2 page ", 5.Absolute Maximum Ratings at Tc=25°C unless otherwise specified

Contextual Info: b lE D 441b2G 5 2SJ117 D D IE ^ IM flbl « H I T H H IT A C H I/tO P T O E L E C T R O N IC S SILICON P-CHANNEL MOS FET 1 HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SK310 • FEATURES • High Breakdown Voltage. •

2SK3109-ZJ

Abstract: MP-25 2SK3109 2SK3109-S
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3109 is N channel MOS FET device that PART NUMBER PACKAGE 2SK3109 TO-220AB 2SK3109-S TO-262 2SK3109-ZJ TO-263 features a low on-state resistance and excellent

2SK3109

Abstract: 2SK3109-S 2SK3109-ZJ MP-25 D13332EJ2V0DS00
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3109 is N channel MOS FET device that PART NUMBER PACKAGE 2SK3109 TO-220AB 2SK3109-S TO-262 2SK3109-ZJ TO-263 features a low on-state resistance and excellent

2SK3108

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3108 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3108 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3109 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,

2SK3109

Abstract: 2SK3109-S 2SK3109-ZJ MP-25 1302 diode
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3109 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3109 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics,

2SK3102-01R

Abstract: 2SK3102 2SK3102-01R equivalent
Contextual Info: 2SK3102-01R FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIS SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof TO-3PF Applications Switching regulators DC-DC converters

2SK3105

Abstract: marking xa
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3105 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION FEATURES 3 1.5 • Can be driven by a 4 V power source • Low on-state resistance RDS(on)1 = 95 mΩ MAX. (VGS = 10 V, ID = 1.5 A)

2SK3108

Abstract: nec 2501
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3108 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3108 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC

2SK3101LS

Abstract: K3101
Contextual Info: 2SK3101LS Ordering number : ENN7910 N-Channel Silicon MOSFET 2SK3101LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications

D1380

Abstract: 2SK3107 SC-75
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3107 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3107 is a switching device which can be driven directly by a 0.3 +0.1 –0 2.5 V power source. 0.15 +0.1

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3108 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION T he 2 S K 3 1 0 8 is N cha nn el M O S FET de vice tha t fea tu res a lo w on -sta te resista nce and e xce lle n t sw itch ing cha racteristics,

on line ups circuit diagrams

Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Contextual Info: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm

TN6Q04

Abstract: 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584
Contextual Info: SANYO Power Transistors Bipolar Transistor Series & Schottky Barrier Diode Series CONTENTS 2ĝ5 ŝTO-220MF Package 6 ŝTO-220FI Package ŝLow-saturation Voltage Transistors 7 ŝTO-220FI5H Package 14 ŝHorizontal Deflection Output Use 8 ŝTO-220ML Package 15