2N599 Search Results

TA7920

Abstract: equivalent of SL 100 NPN Transistor 2N5992 BT 812 7w RF POWER TRANSISTOR NPN RCA rf power transistor RCA Power Transistor 4 225
Contextual Info: File No. 451 DUGBÆ I ^ Power T ransistors Solid State Division 2N5992 7-W A M ,6 6 -to -8 8 -M H z E m itte r-B a lla ste d S ilic o n N -P -N O verlay Transistor For 12.5-V Am plifiers in V H F Com m unications Equipm ent Features • • • • 7-W min. carrier output, 10-dB min. gain at 88 MHz

2N5995

Abstract: transistor ac 125 equivalent Arco 424 rca 632 92CS-17399 ARCO 0.1 Z VK 200-09 50N050
Contextual Info: File No. 454 RF Power Transistors Solid State Division 2N5995 7-W, C W 175-M H z Silicon N-P-N Overlay Transistor For 12.5-Volt Applications in VHF Communications Equipment Features: • Low-inductance radial leads ■ Hermetically sealed ceramic-metal package

wf vqe 24 d

Abstract: 2N5898 2N5989 225AB 25CC 2N5991 MBD5300 TO-225AB mbd-5300 Transistor J3T 3 pin
Contextual Info: MOTOROLA SC XSTRS/R F 12Ë D | b3L?254 OG 0MS?b ? | ^33 NPN MOTOROLA SEMICONDUCTOR 2N5989 2N5991 TECHNICAL DATA 12 AM PERE POWER PLASTIC COM PLEM ENTARY SILICON POWER TRANSISTORS POWER TRANSISTORS COM PLEM ENTARY SILICON * '* .J .J. . designed fo r use In g eneral-purpose am p lifier and sw itching

2N5986

Abstract: 2N5988 2N5991 2N5987 2N5989
Contextual Info: DE | b 3 b 7 2 5 4 0000404 2 | ~ MOTOROLA SC -CXSTRS/R F> 6367254 MOTOROLA SC <XSTRS/R F 96DS0404 D ~pr-3 3-/S PNP MOTOROLA T' 2N5986, 2N5987 2N5988 SEMICONDUCTOR TECHNICAL DATA NPN 2N5989, 2N5991 12 AMPERE H IG H POWER PLASTIC C O M P LE M E N TA R Y S IL IC O N POWER TRANSISTO RS

transistor 3l2

Abstract: 2N5994 Arco 403 118-136 mhz rca 381 transistor rca 632 RCA 431 transistor RCA Power Transistor 4 225
Contextual Info: File No. 453 RF Power Transistors Solid State Division 2N5994 15-W AM and 3 5 -W CW E m itter- Ballasted Overlay Transistor Silicon N-P-N Device fo r 12.5-V A M and 2 8 -V FM Am plifiers in V H F Communications Equipm ent Features: • In 12.5 V AM 118-136 MHz commercial aircraft

2N599 JAN

Abstract: 2N599 N468 MIL-S-19491 Y2 TRANSISTOR CONFORMANCE pnp germanium transistor
Contextual Info: M IL-S-19500/186C NAVY 22 June 1964 SUPERSEDING MIL-S-l9500/166B(NAvy) 20 September 1962 (See 6.2) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, TYPE 2N599 1. SCOPE 1.1 D escription.- This Specification covers the detailed requirem ents for a PNP germanium transistor

TA7921

Abstract: 150 watt hf transistor 12 volt rca 632 2N5993 rca transistor RCA rf power transistor 452 transistor 225/TA7921
Contextual Info: File No. 452 0UQB//D ^ow er Transistors Solid State Division 2N5993 18-W CW 8 8 -M H z E m itterBallasted Overlay Transistor Silicon N -P-N T ype for 12.5-Volt Applications in V H F Com m unications Equipm ent Features: • ■ ■ ■ ■ Emitter-ballasting resistors

56-590-65/4A

Abstract: ferroxcube 56-590-65/4a rca 632 Arco 423 arco 404 2N5996 i7356 RCA Power Transistor 4 225 VK20009-3B
Contextual Info: File No. 455 0U Q B Æ 1 RF Power Transistors Solid State Division 2N5996 15-W C W 175-M H z E m itterB allasted O verlay lYansistor Silicon N-P-N Device for 12.5-Volt Applications in VH F Communications Equipment Features: • ■ ■ ■ ■ ■ Emitter-ballasting resistors

2N5990

Abstract: 2N5991 2N5989 2N5986 2N599 2N598
Contextual Info: Inchange Semiconductor Product Specification 2N5989 2N5990 2N5991 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2N5986/5987/5988 ・Low collector saturation voltage APPLICATIONS ・Designed for use in general purpose

2N5987

Abstract: 2N5990 2N5991 2N5988 2N5989 2N5986
Contextual Info: Product Specification www.jmnic.com 2N5989 2N5990 2N5991 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2N5986 2N5987 2N5988 ・Low collector-emitter saturation voltage APPLICATIONS ・Designed for use in general purpose

2n6991

Abstract: 2N5969
Contextual Info: ^mi-Conductor <Piodueti, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5986, 2N5987 2N5988 NPN 2N5989, 2N5991 12 AMPERE HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS TOWER TRANSISTORS

Contextual Info: 2N5999 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)35 I(C) Max. (A)500m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)30n @V(CBO) (V) (Test Condition)25 V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)50m

2N69S

Abstract: To226AB 2N5989 diodA QE 2N5891 dioda OA 50
Contextual Info: NPN MOTOROLA SEM ICO N D U CTO R 2N5989 2N5991 TECHNICAL DATA 12 AM PERE ^v^’^ ^ ^ H l G H POWER P LA STIC CO M PLEM EN TARY SILICON POWER TRAN SISTO RS ’ POWER TRAN SISTO RS CO M PLEM EN TARY SILICON V- • •. designed for use in general-purpose am plifier and switching

2N5991

Abstract: 2N5987 2N5988 2N5989 225AB TO-225AB 2N5986 2N6988 transistor 2 Amp 3 volt 2sc 3138
Contextual Info: • -X - MOTOROLA SC -CXSTRS/R F> = ” ^ x - ^ « ÎW ÎB PNP MOTOROLA 2N5986, 2N5987 2N5988 SEMICONDUCTOR TECHNICAL DATA « 1» 1 / NPN * 2N5989, 2N5991 « * 4 4 % 12 AMPERE HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS POWER TRANSISTORS COMPLEMENTARY SILICON

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N5832

Abstract: 2n6008
Contextual Info: ALLEGRO MICROSYSTEMS 8514019 INC SPRA G U E. =13 » • 0SD433Ô G 0 G 3 S Ô C1 Ô ■ S E M IC O N D S / I C S 93D 03589 ALGR D T 'ü - 1 - PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C

MRF660

Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040

2N3480

Abstract: 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2n4956 2SC644 S 2n3400 2SC712
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 V BR CEO hFE Ie Max A V(BR)CEO 5 Manufacturer fT (Hz) 132 135 135 135 135 144 144 150 150 150 A8T3392 2N3395 TP3565 2N4286 2SC712 MPS3565 MPS3565 2SC1849 2SC1849

2N2926 equivalent

Abstract: beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A

2N3638

Abstract: 2N5818 2N5816 2N5815 2N3638A 2N5814 HS5810 2N5822 2N5813 2N5810
Contextual Info: SILICON SIGNAL GENERAL PURPOSE COMPLEMENTARY PNP-NPN PAIRS TO-18 PACKAGE VcEO Pt 5 2 5 °C Ccb hpE hFE @ 2V , 2mA @ 10V, 1MHz M ax. (Pt) fr T yp ica l >MH^ NPN PNP (V) Im W ) (mA) M in. M ax. @ 2V, 500mA M in. 2N5810 2M5811 25 500 750 60 200 45 9 .5 150

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main