2N3414 Search Results

Contextual Info: / o z o Ë I— O LU DESCRIPTION 2N3414 is NPN silicon transistor designed for general purpose AF medium power applications. ~ "j 04.68 (0.18) j" TO-92B T 4.6 (0.18) -• - (0.14) 0.51 12.7 (0.5) min. (0 .02 ) Bottom view Unit: mm(inch) ii ABSOLUTE MAXIMUM RATINGS

Contextual Info: 2N3414 Silicon transistor. 25V 500mA. 4.65 Transistors Transistors Bipo. 1 of 1 Home Part Number: 2N3414 Online Store 2N3414 Diodes Silic o n trans is t o r. 2 5 V 5 0 0 m A. Transistors Enter code INTER3 at

Contextual Info: 2N3414 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)500m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)25 V(CE)sat Max. (V).30 @I(C) (A) (Test Condition)50m

2n3414

Abstract: 2N3416
Contextual Info: 2N3414 2N3415 2N3416 2N3417 MPS3414 MPS3415 MPS3416 MPS3417 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3414, MPS3414 series devices are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general

2N3414

Abstract: 04bc hFE-75 transistor
Contextual Info: 2N3414 NPN SILICON TRANSISTOR DESCRIPTION 2N3414 is NPN silicon transistor designed for general purpose AF medium power applications. 04.68 0.18 TO-92B 4.6 (0.18) 3.58 (0.14) B c e\ 0.4 J(0.016) n 2.54 10° — 0.51 "(0 .02) 12.7 (0-5) min. ( 0 . 1) Bottom view

"to-98" package

Abstract: 2N3415 2n3416 2n3417
Contextual Info: G E SOLID STATE 3875081 ~ 01 G E S O L I D STATE DE | BÖ7S0Ö1 □□IVTIS T 01E 17915 D Signal Transistors 2N3414-17, GES3414-17 - r a Silicon Transistors TO-92 TO-98 The GE/RCA Types 2N3414-17and GES3414-17 are planar epitaxial passivated NPN silicon transistors Intended for

2N3415

Abstract: transistor 2n3415 2N3414 transistor 2n3414 MPS-3417 transistor 2N3416 2n3417 2N3416 NPN Silicon Epitaxial Planar Transistor to92 3414
Contextual Info: 2N3414 2N3415 2N3416 2N3417 MPS3414 MPS3415 MPS3416 MPS3417 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3414, MPS3414 series types are NPN silicon transistors, manufactured by the epitaxial planar process, designed for general

2N3794

Abstract: 2N4033 2N4945 2N4141 2n4946 TO-92B 2N3414 2N3415 2N3417 2N3502
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE HFE MAXIMUM RATINGS Pd IC VCEO mW (A) (V) min max IC (mA) VCE VCE(sat) max (V) (V) (A) fT min (MHz) Cob COMPLE­ max MENTARY TYPE (pF) 2N3414 2N3415 2N3416 2N3417 2N3502 N N N N TO-92B TO-92B

2N3415

Abstract: MPS3414 MPS3415 2N3414 2N3416 2N3417 MPS3416 MPS3417 3414 TRANSISTOR 2n3415 transistor
Contextual Info: Datasheet 2N3414 2N3415 2N3416 2N3417 MPS3414 'MPS34.15 MPS3416 MPS3417 NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-92 CASE* M anufacturers of W orld C lass Discrete S em iconductors

NPN transistor ECB TO-92

Abstract: 2N3414 0181 ecb
Contextual Info: NPN SILICON TRANSISTOR DESCRIPTION 2N3414 is NPN silicon transistor designed for general purpose AF medium power applications. TO-92 ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Operating & Storage Junction Temperature

BC335

Abstract: MPS005 CS9013 BC333 BC358 TMPT1009F3 LOW-POWER SILICON NPN 2SC403 2S060 2S0638
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 MMBC1009F3 2SC403 2N5810 GES5810 TP5810 2S0638 2S0400 CS9013 2N703 2N3241 ~~~~~~ 15 20 MPS3402 MPS3402 MPS3403 MPS3403 MPS3414 MPS3414 2N3402 2N3414 §E~~414 25 30 35 40 45 50 55 60 TMPT1009F2 2SC371 MPS005

92C3-427S0

Abstract: 42766 2N3414 GE 2N3414 2n3417 output admittance hoe 2N3416 GES3414 GES3416 X10-3 2n3414-17
Contextual Info: G E SO LID S T A T E ~ 01 3 875 081 G E S O L I D S T A T E DE§3fl750ñl □□IVTIS T 01E D 17915 Signal Transistors 2N3414-17, GES3414-17 T a ? - / ? Silicon IVansistors TO-92 TO-98 The GE/RCA Types 2N3414-17and GES3414-17 are planar epitaxial passivated NPN silicon transistors Intended for

schematic diagram tv sony digital tv

Abstract: 2N3414 CXD1175 OPA690 THS3001 TLC5510 TLC5510A TLC5510AINSLE TLC5510INSLE TLC5510IPW
Contextual Info: TLC5510, TLC5510A 8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTERS SLAS095L – SEPTEMBER 1994 – REVISED JUNE 2003 D D features D D D D D Analog Input Range – TLC5510 . . . 2 V Full Scale – TLC5510A . . . 4 V Full Scale 8-Bit Resolution Integral Linearity Error

2N3414

Abstract: CXD1175 OPA690 THS3001 TLC5510 TLC5510A TLC5510AINSLE TLC5510INSLE TLC5510IPW
Contextual Info: TLC5510, TLC5510A 8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTERS SLAS095L – SEPTEMBER 1994 – REVISED JUNE 2003 D D features D D D D D Analog Input Range – TLC5510 . . . 2 V Full Scale – TLC5510A . . . 4 V Full Scale 8-Bit Resolution Integral Linearity Error

Contextual Info: TLC5510, TLC5510A 8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTERS SLAS095K - SEPTEMBER 1994 - REVISED MAY 1999 Ifeatures Analog Input Range - T L C 5 5 1 0 . 2 V Full Scale - TLC5510A . . . 4 V Full Scale • 5-V Single-Supply Operation • Low Power Consumption

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

schematic diagram tv sony

Abstract: TLC5510 CXD1175 2N3414 TLC5510INSLE schematic diagram tv sony 21
Contextual Info: TLC5510 8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTER SLAS095B – SEPTEMBER 1994 – REVISED FEBRUARY 1995 features • • • • • • • NS PACKAGE† TOP VIEW 8-Bit Resolution Linearity Error ± 0.75 LSB Max (25°C) ± 1 LSB Max (– 20°C to 75°C)

2N4033

Abstract: 2N3702 2N3794 2N4235 2N3107 2N3115 2N3073 2N3081 2N3108 2N3109
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. >- C A SE a < _i o CL M AXIM UM R A T IN G S Pd mW •c H V C E (S A T ) FE 'c (A ) V C EO (V ) min max max 'c f T min Cob C O M PLE­ max M EN TA RY TYPE (m A | V CE (V ) (V ) (A ) (MHz) (pF) 2N3073 2N3081 2N3107

n3860

Abstract: 2N2713 2N292 2N2925 2N2711 2N2712 2N2714 2N2923 2N2924 2N2926
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394

2N3480

Abstract: 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2n4956 2SC644 S 2n3400 2SC712
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 V BR CEO hFE Ie Max A V(BR)CEO 5 Manufacturer fT (Hz) 132 135 135 135 135 144 144 150 150 150 A8T3392 2N3395 TP3565 2N4286 2SC712 MPS3565 MPS3565 2SC1849 2SC1849

2N3564

Abstract: 2N3606 2N3565 pin 2N3605 2N3607 TO-921 2N33 2N3565 2N27 2N3417
Contextual Info: TO-92 B-H T < 3 2 1 DIM MIN MAX A 4,32 5,33 B 4,45 1 5,20 C 3,18 4,19 D 0,41 0,55 E 0,35 0,50 F 5D E G G 1,14 1,40 H 1,14 1,53 K 12,70 - ALL DIMENSIONS IN M.M. Pin Configuration Available in TO-92 SJ - - A iM r o V3 2 1 / CDU. Code Style Pin 1 TO-92 Pin 2

SS321 equivalent

Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4

2N2926 equivalent

Abstract: beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt