2N3607 Search Results

Contextual Info: 2N3607 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)14 V(BR)CBO (V)18 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.30 h(FE) Max. Current gain.

2N3633

Abstract: TIP300 2N3609 2SA8140 MH0816 BCX53 Rohm 2sb631 hitachi 2N3566 2N3519 sk3025
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M

2N3564

Abstract: 2N3606 2N3565 pin 2N3605 2N3607 TO-921 2N33 2N3565 2N27 2N3417
Contextual Info: TO-92 B-H T < 3 2 1 DIM MIN MAX A 4,32 5,33 B 4,45 1 5,20 C 3,18 4,19 D 0,41 0,55 E 0,35 0,50 F 5D E G G 1,14 1,40 H 1,14 1,53 K 12,70 - ALL DIMENSIONS IN M.M. Pin Configuration Available in TO-92 SJ - - A iM r o V3 2 1 / CDU. Code Style Pin 1 TO-92 Pin 2

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

2SB641 r

Abstract: 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

1.0 k mef 250

Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Contextual Info: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a

Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. ^cuo (V) Min ^CEO ^EBO (V) Min (V) Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) (W) *c (A) @Tc=25“c *C BO (mA) VCB @ (V) Ic e s V CE W (V) Max Max "re Min @ t * (mA)

bcs47

Abstract: BCS48 BC170C 8C548 BF494 ph 06 BC170B BF494 ph 04 cd639 BCS48B bf238
Contextual Info: 1 < 3 2 1 DIM MIN MAX A 4,32 5,33 8 4,45 T 5,20 C 3,18 4,19 D 0,41 0,55 E 0,35 0,50 F 5 DEG G 1,14 H 1,14 1,53 K 12,70 - 1,40 ALL D IM EN SIO N S IN M M. Pin Configuration Available in TO-92 S JÜ - A A SEC ^ CDU. Code Style Pin 1 TO-92 Pin 2 Pin 3 Emitter

2N2712

Abstract: 2N3606 2N3397 2N3564
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings V CEO (V) Min (V) Min 18 13 (V) Min 5 PD (W) (A) §Tfc25“c (mAI Max 0.1 0.5 0.625 *CBO va i *CES (V) (mA) Max 18 hrE '“CF @ (V L @ Min Max 75 225 lc X (mA) 2 ^CE V CE(SAT) (VI (V) Max V BE(SAn

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

IN733A

Abstract: 2N551 IN768A 2N146 2N2405 2N339 2n3072 2N244 2N1234 2N1167
Contextual Info: 666-001 N r lN N C ^ n 'O N N O V T ic v lO O O 'n'O 'O O 'O O O^t VTi^VTiO 0 r | 0 4 '4 ' 0 \0 ' 0 0 0 0 0 00 0 0 0 CN-NArHCMO 0 0 O 00 o cn-nacm cmcm < m< m cacacananananaooco o n o h h h cMH4 , 'A n N r < 4 - nano cn-no cmcacmcmcmcmcmcmcm canono oo ono cacano

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2N3609

Abstract: 2N3633 2N3520 2N3618 motorola 2SC1330 transitron 2N3543 KT503A LOW-POWER SILICON NPN 2N3625
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

BF244 datasheet

Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216

NS100-MA

Abstract: MPS634 2n5845 2N3606 NS-500 2N2713 2N2714 2N3605 MPS2369 MPS2713
Contextual Info: ; 14c 00102 5048836 K S L ‘ MICRODEVICES INC 14 ' D 7 "—3 5-0/ De J 504flfl3b □□□□IDE 4 SATURATED SWITCHES TYPE b v cbo b v CEo b v ebo 'CBO Min Min Min Max VCB nfe Min-Max 9 •C VCE & VCE ut Max 1 VBE(ut) Max® <C Cob Max *T Min 'C ® •off

transistor 2N3563

Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
Contextual Info: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .

2N3565

Abstract: 2N3606 2n2714 transistor 2N3605 2N3564 2N2712 2N360 transistor 2N3565 transistor 2n2712 2N3565 NPN Transistor
Contextual Info: TO-92 DIM MIN MAX A 4,32 5,33 T B 4,45 1 5,20 C 3,18 4,19 < D 0,41 0,55 E 0,35 0,50 B -H 3 2 1 F 5D E G G 1,14 1,40 H 1,14 1,53 K 12,70 - ALL DIMENSIONS IN M.M. Pin Configuration Available in TO-92 SJ — 'A iM f V3 o 2 1 / CDU. Code Style Pin 1 TO-92 Pin 2

2N3633

Abstract: transitron 2N3596 INDUSTRO 2n3605 transitron 2n3605 TEXAS 2N3583 philco-ford 2N3609
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 >= 40 45 50 BFT28B BFT28B STIP2006 BSP15 BST15 BST15 MJ5415 MJ5415 MM5415 MM5415 MM5415 ST5415 2N5415 TRSP5415 TRSP2006 STIP20 STIP205 ~~~~~~X 55 60 65 70 75 80 85 90 TRSP20X TRSP20X5 TRSP20X5

1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Contextual Info: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A