y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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cp4071
Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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68b09sn74als04bnsn74als08nsn74als00an+16ca3046ua733lm311plm318ca309478h05cp4071data sheet ic 74082n4891ic 7408mda970a2mda25001854-0071mda25022n4342ic ttl 7400
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"to-98" package
Abstract: 2N3415 2n3416 2n3417
Contextual Info: G E SOLID STATE 3875081 ~ 01 G E S O L I D STATE DE | BÖ7S0Ö1 □□IVTIS T 01E 17915 D Signal Transistors 2N3414-17, GES3414-17 - r a Silicon Transistors TO-92 TO-98 The GE/RCA Types 2N3414-17and GES3414-17 are planar epitaxial passivated NPN silicon transistors Intended for
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2n3414-17ges3414-172n3414-17and2n3414+42n3416to-98" package2n34152n3417
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transitron
Abstract: rca 2n1701 BFY46 2N1711 MOTOROLA 2SC109A 2N1666 2N1619 2N1565 2SC1364 ELECTRON CORP
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 2N2389 BFY34 SA2710 2SC734 2SC2000M MPS6591 2N2253 2N2253 Sl100 501613 2SC109A 2S0220 A5T2193 2N2351 2N2351A 2N5262 MPS9434 UPI956 HSE146 2SC216
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2n2193bnb312enb312fnb312x+15nb312y2sc4862n2389bfy34sa2710transitronrca 2n1701bfy462n1711 motorola2sc109a2n16662n16192n15652sc1364electron corp
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853impattc5088 transistortransistor c3207tlo84cn+7sec c5088in5355bd2817ac3207 transistortoshiba f630tlo81cpmc74hc533n
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BSY44
Abstract: 2SC634A SA2720 2n3404 2SC503 2S0220 2SC109A 2N2193 LOW-POWER SILICON NPN 2SC486
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 2N2389 BFY34 SA2710 2SC734 2SC2000M MPS6591 2N2253 2N2253 Sl100 501613 2SC109A 2S0220 A5T2193 2N2351 2N2351A 2N5262 MPS9434 UPI956 HSE146 2SC216
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2n2193bnb312enb312fnb312x+14nb312y2sc4862n2389bfy34sa2710bsy442sc634asa27202n34042sc5032s02202sc109a2n2193low-power silicon npn
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92C3-427S0
Abstract: 42766 2N3414 GE 2N3414 2n3417 output admittance hoe 2N3416 GES3414 GES3416 X10-3 2n3414-17
Contextual Info: G E SO LID S T A T E ~ 01 3 875 081 G E S O L I D S T A T E DE§3fl750ñl □□IVTIS T 01E D 17915 Signal Transistors 2N3414-17, GES3414-17 T a ? - / ? Silicon IVansistors TO-92 TO-98 The GE/RCA Types 2N3414-17and GES3414-17 are planar epitaxial passivated NPN silicon transistors Intended for
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2n3414-17ges3414-172n34142n3416+7ges3414ges341692c3-427s0427662n3414 ge2n3417 output admittance hoex10-3
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