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    2925DM/B
    		Rochester Electronics LLC AM2925A - Clock Generator PDF Buy

    25DMB Datasheets (7)

    Rubycon
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2.5DMB100M20X55
    		Rubycon Electric Double Layer Capacitors, Supercaps, Capacitors, CAP SUPER 100F 2.5V RADIAL Original PDF 1
    2.5DMB10M10X35
    		Rubycon Electric Double Layer Capacitors, Supercaps, Capacitors, CAP SUPER 10F 2.5V RADIAL Original PDF 1
    2.5DMB22M16X25
    		Rubycon Electric Double Layer Capacitors, Supercaps, Capacitors, CAP SUPER 22F 2.5V RADIAL Original PDF 1
    2.5DMB2R2M8X16
    		Rubycon Electric Double Layer Capacitors, Supercaps, Capacitors, CAP SUPER 2.2F 2.5V RADIAL Original PDF 1
    2.5DMB3R3M8X20
    		Rubycon Electric Double Layer Capacitors, Supercaps, Capacitors, CAP SUPER 3.3F 2.5V RADIAL Original PDF 1
    2.5DMB4R7M10X20
    		Rubycon Electric Double Layer Capacitors, Supercaps, Capacitors, CAP SUPER 4.7F 2.5V RADIAL Original PDF 1
    2.5DMB50M18X40
    		Rubycon Electric Double Layer Capacitors, Supercaps, Capacitors, CAP SUPER 50F 2.5V RADIAL Original PDF 1
    SF Impression Pixel

    25DMB Price and Stock

    Teledyne HiRel

    Teledyne HiRel QP7C198-25DMB

    STATIC RAM, 32K X 8, WITH OUTPUT ENABLE, - Rail/Tube (Alt: QP7C198-25DMB)
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    Teledyne HiRel CY7C148-25DMB

    STATIC RAM, 1K X 4, 25 NS ACCESS TIME - Rail/Tube (Alt: CY7C148-25DMB)
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    Teledyne HiRel CY7C263-25DMB

    PROM, 8K X 8, 25 NS ACCESS TIME - Rail/Tube (Alt: CY7C263-25DMB)
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    Avnet Americas CY7C263-25DMB Tube 250
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    Teledyne HiRel CY7C245A-25DMB

    PROM, ONE TIME, 2K X 8, REGISTERED, 25 N - Rail/Tube (Alt: CY7C245A-25DMB)
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    Avnet Americas CY7C245A-25DMB Tube 250
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    Teledyne HiRel QP7C263-25DMB

    PROM, 8K X 8, 25 NS ACCESS TIME - Rail/Tube (Alt: QP7C263-25DMB)
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    Avnet Americas QP7C263-25DMB Tube 250
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    Find more 25DMB price and stock on Findchips.com

    25DMB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CY7C187

    Abstract: CY7C187A
    Contextual Info: CY7C187A 64K x 1 Static RAM Features provided by an active LOW chip enable CE and three-state drivers. The CY7C187A has an automatic power-down feature, reducing the power consumption by 55% when deselected. • High speed — 20 ns • CMOS for optimum speed/power


    Original     		cy7c187acy7c187 PDF

    C2665

    Abstract: C2668 7c26 C2662 C266 27C64 CY7C266 R1250 C2666
    Contextual Info: 1CY 7C26 6 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)


    Original     		cy7c266600-mil-widec2665c2668+67c26c2662c26627c64r1250c2666 PDF

    C1507

    Abstract: C1504 C1502 c1509 C150 CY7C150 R1329
    Contextual Info: CY7C150 1Kx4 Static RAM Features Separate I/O paths eliminates the need to multiplex data in and data out, providing for simpler board layout and faster system performance. Outputs are three-stated during write, reset, deselect, or when output enable OE is held HIGH, allowing for


    Original     		cy7c150c1507c1504c1502+3c1509c150r1329 PDF

    C401 diode

    Abstract: 10DC IR transistor 10dc ir C4016 C4019 C401 CY7C401 CY7C402 CY7C403 C4013
    Contextual Info: CY7C401/CY7C403 CY7C402/CY7C404 64 x 4 Cascadable FIFO 64 x 5 Cascadable FIFO Features words. Both the CY7C403 and CY7C404 have an output enable OE function. • 64 x 4 (CY7C401 and CY7C403) 64 x 5 (CY7C402 and CY7C404) High-speed first-in first-out memory (FIFO)


    Original     		cy7c401/cy7c403cy7c402/cy7c404cy7c403cy7c404+11cy7c401cy7c40225-mhz50-nsc401 diode10dc irtransistor 10dc irc4016c4019c401c4013 PDF

    CY7C128A

    Abstract: transistor C128 C128A 7C128A-45 7C128A-25
    Contextual Info: 1CY 7C12 8A CY7C128A 2K x 8 Static RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 440 mW commercial — 550 mW (military) • Low standby power


    Original     		cy7c128atransistor c128c128a7c128a-45+17c128a-25 PDF

    C167A-3

    Abstract: C167A-2 CY7C167A CY7C167A-35DMB cy7c167a-35pc
    Contextual Info: CY7C167A 16K x 1 Static RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 275 mW • Low standby power — 83 mW • TTL-compatible inputs and outputs


    Original     		cy7c167a20-leadc167a-3c167a-2+2cy7c167a-35dmbcy7c167a-35pc PDF

    CY7C197

    Contextual Info: CY7C197 256Kx1 Static RAM Features vided by an active LOW chip enable CE and three-state drivers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns Writing to the device is accomplished when the chip enable


    Original     		cy7c197256kx1 PDF

    7cl6

    Abstract: D-2501 CY7C161A CY7C162 CY7C162A
    Contextual Info: CYPRESS SEMICONDUCTOR 4bE » B SSfl'lbfe.S □ QQbMSb b q c y p CY7C161A CY7C162A • - j/ "— = 16,384 x 4 Static RAV RAM Separate I/O SEMICONDUCTOR Features • Automatic power-down when dese­ lected • Transparent write 7C161A • CMOS for optimum speed/power


    OCR Scan     		cy7c161acy7c162a7c161acy7c162+6au62a-35dmb35kmbcy7c162a-35lmbcy7c162a-45dmb7cl6d-2501 PDF

    CY7C263-35PC

    Abstract: 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 CY7C261 CY7C264 f1b0
    Contextual Info: CY7C261 CY7C263/CY7C264 CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 m\V (military) • Super low standby power (7C261)


    OCR Scan     		cy7c261c263/cy7c2647c261300-mil+11600-milcy7c263cy7c2648192-wordbygy7c264cy7c263-35pccy7c26345dmbcerdip z package7c264c261f1b0 PDF

    7C192-12

    Abstract: 7C192-15 7C192-20 A10C CY7C191 CY7C192 CY7C192-25PC
    Contextual Info: MbE D CYPRESS SEMICON DUC TOR B 250^fc,b2 OOQfc.1,42 3 E 3 C Y P CY7C191 CY7C192 CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C19X • CMOS for optimum speed/power • H ighspeed — tM = 25 ns • Low active power


    OCR Scan     		cy7c191cy7c1927c19xthecy7c191+9cy7c192-45vccy7c192-45dmbcy7c192-45kmb45lmb7c192-127c192-157c192-20a10ccy7c192-25pc PDF

    c46cm

    Abstract: CY7C460 CY7C462 CY7C464 IDT7205 IDT7206
    Contextual Info: CY7C460 CY7C462 CY7C464 m .W C Y P R E S S C ascadable 8 K x 9 F I F O C ascadable 16K x 9 FIFO C ascadable 3 2 K x 9 FIFO Features • • • • • • • • • • • • • • • data outputs go to the high-impedance Functional Description state when R is H IG H .


    OCR Scan     		cy7c460cy7c462cy7c464600-mil+3idt7205idt7206c46cm PDF

    CY7C101A

    Abstract: CY7C102A 7C101A-12 l3lx
    Contextual Info: PRELIMINARY 9 / C Y PR E SS CY7C101A CY7C102A 256K x 4 Static RAM with Separate I/O Features Functional Description • High speed The CY7C101A and CY7C102A are high­ perform ance CMOS static RAM s orga­ nized as 262,144 x 4 bits with separate I/O. Easy m emory expansion is p rovided by ac­


    OCR Scan     		cy7c101acy7c102a7c101atdwel161+38-00231-a7c101a-12l3lx PDF

    1S26

    Abstract: P4C116 P4C116L AD5e
    Contextual Info: PERFORMANCE SEMICONDUCTOR SDE V • 7 0 b 2 5 cl7 0001780 3äb * P S C P4C116/P4C116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS SCRAMS FEATURES ■ Full CMOS, 6T Cell Single 5V±10% Power Supply ■ High Speed (Equal Access and Cycle Times) -12,15/20/25/35 ns (Commercial)


    OCR Scan     		p4c116/p4c116l7db25r7p4c116ltechnology11+724-pinp4c116/lp4c116mil-bul-103-12pc1s26ad5e PDF

    CY7C167A

    Abstract: CY7C167A-35DMB
    Contextual Info: CY7C167A '0 CYPRESS 16K x 1 Static RAM Features Functional D escription • Automatic power-down when dese­ lected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 275 mW • Low standby power — 83 mW • TTL-compatible inputs and outputs


    OCR Scan     		cy7c167a45dmb20-lead300-mil+238-00093-ccy7c167a-35dmb PDF

    7C192-12

    Abstract: 7C192-15 A10C CY7C191 CY7C192 CY7C192-25PC
    Contextual Info: CY7C191 CY7C192 ir CYPRESS 64K x 4 Static RAM with Separate I/O Features Functional Description • High speed T he CY7C191 and CY7C192 are high­ perform ance CM OS static RAM s orga­ nized as 65,536 x 4 bits with separate I/O. Easy m em ory expansion isprovided by ac­


    OCR Scan     		cy7c191cy7c19238-00076-jtaw15+5tadvi157c192-127c192-15a10ccy7c192-25pc PDF

    L496D

    Abstract: 9l reset CY7C331 ST L11922 0423-J
    Contextual Info: CY7C331 -W C Y P R E S S Asynchronous Registered EPLD Features • TWelve I/O macrocells each having: — One state flip-flop with an XOR sum-of-products input — One feedback flip-flop with input coining from the I/O pin — Independent product term set,


    OCR Scan     		cy7c33128-pin-40tmb28-lead+640wmb300-mill496d9l resetst l119220423-j PDF

    AB26S

    Abstract: 7C109A CY7C109 CY7C109A
    Contextual Info: CY7C109A PRELIMINARY l ^wSSQBBSf S S ySSt Ì p YJe JkP XRI- XjiïJF ^ 128KX 8 Static RAM Features Functional Description • H ighspeed The CY7C109A is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable


    OCR Scan     		cy7c109a128kxab26s7c109a+1cy7c109 PDF

    CY7C428-65PC

    Abstract: CY7C419 CY7C421 CY7C425 CY7C429 CY7C433 IDT7200 IDT7201 IDT7202 IDT7203
    Contextual Info: fax id: 5404 CY7C419/21/25/29/33 -= C Y P R E S S 256/512 /1K /2K/4K x 9 Asynchronous FIFO Features • • • • • • • • • • • • • • • Asynchronous first-in first-out FIFO buffer memories 256 x 9 (CY7C419) 512 x 9 (CY7C421) 1 K x 9 (CY7C425)


    OCR Scan     		cy7c419/21/25/29/33cy7c419cy7c421cy7c425+9cy7c429cy7c433300-mil600-milidt7200idt7201cy7c428-65pcidt7202idt7203 PDF

    22V10D

    Abstract: PALC22V10D-10PC PALC22V10B PALC22V10B-15 PALC22V10D PALC22V10D-10JC
    Contextual Info: MbE D CYPRESS SEMICONDUCTOR • aSBTbbE QOGbcieJS 3 E3CYP PRELIMINARY CYPRESS SEMICONDUCTOR PALC22V10D Flash Erasable, Reprogrammable CMOS PAL Device Features Advanced second-generation PAL ar­ chitecture Low power — 90 mA max. standard — 120 mA max. military


    OCR Scan     		palc22v10d100-mhz83-mhz15dmb+8palc22v10d-15kmbpalc22v10d-15lmb22v10dpalc22v10d-10pcpalc22v10bpalc22v10b-15palc22v10d-10jc PDF

    CY7C197

    Abstract: CV7C197
    Contextual Info: MbE D n " T CYPRESS SEMICONDUCTOR Features Automatic power-down when deselected CMOS for optimum speed/power Highspeed — 20ns Low active power — 880 mW Low standlgr power — 220 mW TlX-compatible imputs and outputs Capable ofwithstanding greater than


    OCR Scan     		cy7c1972001velectrostaticcy7c197-45lccy7c197-45pc+5cy7c197-45vccy7c197-45dmbcy7c197-45kmbcy7c197-45lmbcv7c197 PDF

    CY7C1009

    Abstract: 7C1009 A14C
    Contextual Info: PRELIMINARY r y f|pPA RJL- lrP Anni I CY7C1009 128Kx 8 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW The CY7C1009 is a high-performance


    OCR Scan     		cy7c1009550-mil7c1009a14c PDF

    automaticpower change over switch circuit diagram

    Abstract: CY7C185 CY7C185A
    Contextual Info: CY7C185A '* C YPRESS 8K x 8 Static RAM Features Functional D escription • High speed — 20 ns • CMOS for optimum speed/power T he CY7C185A is a high-perform ance CMOS static RA M organized as 8192 words by 8 bits. Easy mem ory expansion is provided by an active LO W chip enable


    OCR Scan     		cy7c185a300-mimilitary25lmb28-pin+435dmb28-leadautomaticpower change over switch circuit diagramcy7c185 PDF

    P4C148

    Abstract: P4C149
    Contextual Info: P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Two Options – P4C148 Low Power Standby Mode – P4C149 Fast Chip Select Control High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45/55 ns (Commercial) – 15/20/25/35/45/55 ns (P4C148 Military)


    Original     		p4c148p4c149096-bit PDF

    P4C150

    Contextual Info: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM FEATURES Separate Input and Output Ports Full CMOS, 6T Cell Three-State Outputs High Speed Equal Access and Cycle Times – 10/12/15/20/25 ns (Commercial) – 15/20/25/35 ns (Military) Fully TTL Compatible Inputs and Outputs


    Original     		p4c15024-pin28-pin096-bit+2requires300sram105 PDF