CY7C162A Search Results

7cl6

Abstract: D-2501 CY7C161A CY7C162 CY7C162A
Contextual Info: CYPRESS SEMICONDUCTOR 4bE » B SSfl'lbfe.S □ QQbMSb b q c y p CY7C161A CY7C162A • - j/ "— = 16,384 x 4 Static RAV RAM Separate I/O SEMICONDUCTOR Features • Automatic power-down when dese­ lected • Transparent write 7C161A • CMOS for optimum speed/power

Contextual Info: CY7C161A CY7C162A CYPRESS SEMICONDUCTOR 16K x 4 Static RAM Separate I/O Features Functional Description • High speed The C Y 7C161A and C Y 7C162A are highperform ance C M O S static R A M s orga­ nizes as 16,384 by 4 bits w ith sep a ra te I/O . Easy m em ory expansion is provided by ac­

CY7C161A

Abstract: CY7C162A
Contextual Info: CY7C161A CY7C162A 16K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enables CE1, CE2 and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 60% when deselected.

Contextual Info: CY7C161A CY7C162A SEMICONDUCTOR Features • Automatic power-down when dese­ lected • Transparent write 7C161A 16,384 x 4 Static R/W RAM Separate I/O • Capable o f withstanding greater than 2001V electrostatic discharge. is written into the memory location speci­

CY7C161A-15DMB

Contextual Info: CY7C161A CY7C162A 16K x 4 Static RAM with Separate I/O Functional D escription Features • High speed — 20 nstAA • CMOS for optimum speed/power • Transparent write 7C161A • Low active power — 550 mW • Low standby power — 220 mW • TTL-compatible inputs and outputs

CY7C161A

Abstract: CY7C162A CY7C161A-25DMB
Contextual Info: 1CY 7C16 2A CY7C161A CY7C162A 16K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enables CE1, CE2 and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 60% when deselected.

tm l54

Abstract: CY7C161A CY7C162A 0CE12
Contextual Info: CY7C161A CY7C162A 16K x 4 Static RAM with Separate I/O CYPRESS Functional Description Features • High speed — 20 ns t^ A • CMOS for optimum speed/power • Transparent write 7C161A • Low active power — 55« mW • Low standby power — 22« mW

la25p

Abstract: CY7C161A CY7C162A range-26
Contextual Info: MOE D CY PR ESS S E M I C O N D U C T O R EH 250^2 DOOMfibH 0 B B C V P 7= tf-2> /0 CY7C161A CY7C162A CYPRESS SEMICONDUCTOR Features • Automatic power-down when dese­ lected • TVansparent write 7C161A • CMOS for optimum speed/power • High speed

Contextual Info: CY7C161A CY7C162A 16Kx 4 Static RAM with Separate I/O Features • High speed • • • • • • into the memory location specified on the address pins Ao through A 1 3 . Reading the device is accomplished by tak­ ing the chip enables ( ^ Ei, ( ^ 2 ) LOW

CY7C161

Abstract: CY7C162 C1624
Contextual Info: CY7C161 CY7C162 16K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enables CE1, CE2 and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 65% when deselected.

C1623

Abstract: C1624 c162 c1627 C1622 CY7C161 CY7C162 C1628 C1625
Contextual Info: 1CY 7C16 2 CY7C161 CY7C162 16K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enables CE1, CE2 and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 65% when deselected.

Contextual Info: mw CYPRESS Features • High speed — 20 ns tAA • CMOS Tor optim um speed/power • T ran sp aren t write 7C161A • Low active power — 550 mW • Low standby power — 220 mW • TTL-com patible inputs and outputs • Automatic power-down when dese­

Contextual Info: CY7C161 CY7C162 16Kx 4 Static RAM with Separate I/O Features into the memory location specified on the address pins Ao through A13 . Reading the device is accomplished by tak­ ing the chip enables (CEi, CE2) LOW while write enable (WE) remains HIGH. Under these conditions the contents of the

CY7C161

Abstract: CY7C162 CY7C162-25VC
Contextual Info: CY7C161 CY7C162 16K x 4 Static RAM with Separate I/O CYPRESS Features • High speed — 15-ns • Transparent write 7C161 • CMOS for optimum speed/power • Low active power — 633 mW • Low standby power — 220 mW • TTL compatible inputs and outputs

CY7C169

Abstract: 54600
Contextual Info: Thermal Management CYPRESS Part Number CY7B173 CY7B174 CY7B180 CY7B181 CY7B185 CY7B186 CY7B191 CY7B192 CY7B194 CY7C122 CY7C123 CY7C128 CY7C128A CY7C130 CY7C131 CY7C132 CY7C136 CY7C140 CY7C141 CY7C142 CY7C146 CY7C147 CY7C148 CY7C149 CY7C150 CY7C157 CY7C161A

M38510/10101

Abstract: 14538B MOTOROLA smd transistor 72k code eprom smd atmel QP7C185A M38510-11003 QP7C198 8708 eprom M38510/11201 M38510/10105
Contextual Info: Product Selector Guide March 28, 2005 Analog Description Package SMD Number Part Number DIP 5962-87786 TDC1046 TRW DIP, LCC 5962-88532 TDC1049C1V TRW National A/D Converter, 6-Bit Flash A/D Converter, 9-Bit Comparator, Differential Die Mfg DIP, CAN, FP, LCC

CY7C9101

Abstract: CY7C510 CY7C190 cy7c189 G30-88 CY7c910 EA 9394 cy3341 CY6116 cy7c901
Contextual Info: fax id: 8511 Thermal Management Thermal Management and Component Reliability One of the key variables determining the long-term reliability of an integrated circuit is the junction temperature of the device during operation. Long-term reliability of the semiconductor chip degrades proportionally with increasing temperatures following an exponential function described by the

IR LFN

Abstract: CY7C161 CY7C162
Contextual Info: CYPRESS SEMI COND UCTOR MbE D H aSfl^bLE 5 I ICYP ODDbMM? Features • Automatic power-down when deselected • Transparent write 7061 • CMOS for optimum speed/power • Highspeed — 15 ns U a • Low active power — 633 mW ‘ • Low standby power

7c162

Abstract: A224D 7C161
Contextual Info: CY7C161 CY7C162 m w CYPRESS Features • H igh speed • Transparent w rite 7C 161 — 15-ns • C M O S for op tim u m speed/pow er • Low active power — 633 mW • Low standby power — 220 mW • TTL com p atib le in p u ts and outputs • A utom atic power-down when