CY7C109A Search Results

AB26S

Abstract: 7C109A CY7C109 CY7C109A
Contextual Info: CY7C109A PRELIMINARY l ^wSSQBBSf S S ySSt Ì p YJe JkP XRI- XjiïJF ^ 128KX 8 Static RAM Features Functional Description • H ighspeed The CY7C109A is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable

7C109A-20

Abstract: 7C109A
Contextual Info: CY7C109A PRELIMINARY S F # SEMICONDUCTOR 128K x 8 Static RAM Features Functional Description • High speed — tAA = 12 ns • CMOS for optimum speed/power The CY7C109A is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is

Contextual Info: 7c109A: Thursday, November 19,1992 Revision: Thursday, February 18,1993 CY7C109A PRELIMINARY CYPRESS SEMICONDUCTOR 128K x 8 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW

7C109A

Contextual Info: PRELIMINARY CY7C109A 128K x 8 Static RAM Features Functional Description • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW • 2.0V data retention optional — 100 ^iW • Automatic power-down when

CY7C109

Abstract: CY7C109A
Contextual Info: PRELIMINARY CY7C109A 128K x 8 Static RAM Features D D D D D D The CY7C109A is a highĆperformance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CE1 , an active HIGH chip enable (CE2),

CY7C109

Abstract: CY7C109A 7C109A-15 CY7C109A-20VC 7C109A-35 A15-A7 CY7C109A-15LMB 7C109A-20
Contextual Info: PRELIMINARY CY7C109A 128K x 8 Static RAM Features D D D D D D The CY7C109A is a highĆperformance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CE1 , an active HIGH chip enable (CE2),

Aeroflex 2026 service manual

Abstract: eprom 27C512 earom SERVICE MANUAL 27C512 28C256 93C86 CY7C109A
Contextual Info: Technical Note 2026 Series Memory Security This document gives a full description of the types of memory devices contained in the 2026 series signal generator and information on how to clear memory stores for when the instrument is removed from a secured application.

km681001j-20

Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20
Contextual Info: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ

Contextual Info: PRELIMINARY CYPRESS 128Kx 8 Static RAM Features Functional D escription • High speed — t/\A = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW • 2.0V data retention optional — 100 jiW • Automatic power-down when

Contextual Info: PRELIMINARY CYPRESS SEMICONDUCTOR 128Kx 8 Static RAM Features Functional Description • High speed T h e C Y 7C109A is a high-perform ance C M O S static R A M organized as 131,072 w ords by 8 bits. Easy m em ory expansion is provided by an active L O W chip enable

MMDJ-65608EV-30MQ

Abstract: 5962-8959804MUA QP7C1009B-20DMB 5962-89598 EDI88128LPS70LB PDM41024S20L32 5962-8959824 PDM41024S45TC a3021 EDI88128CS85ZB
Contextual Info: REVISIONS LTR DESCRIPTION H Add device type 41. Make corrections to case outline N, dimension b. Add vendor CAGE 65786 as source of supply for device type 41. Update boilerplate. Editorial changes throughout. 97-03-26 Raymond Monnin J Add device types 42, 43, 44, 45, and 46. Editorial changes to pages

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

PDM41024S25

Abstract: CY7C1009-20DMB SMJ5C1008-25HMM 5962-89598 qml-38535 S128K8L-55MC pdm41024l25tcb PDM41024-S20L32 PDM41024L20TCB GDIP1-T32
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED E Redrawn with changes. Update case X to standard package. Add case 8. Add vendor CAGE 66301 as source of supply for case 8. Convert document to updated SMD boilerplate. Editorial changes throughout. 93-09-30

UM61256AK-15

Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE

CY7C194

Abstract: CY7C195 CY7C199 reliability test data
Contextual Info: Qualification Report December 1996, QTP# 95364, Version 1.1 256K SRAM - RAM28 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C194 64K x 4 Static RAM CY7C195 64K x 4 Static RAM CY7C199 32K x 8 Static RAM PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part

um61256ak-15

Abstract: w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257
Contextual Info: ISSI Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM/NVM Serial EEPROM EPROM FLASH Static RAM SEPTEMBER 1996 CROSS REFERENCE GUIDE E2PROM ATMEL ISSI MIL PACKAGE SYMBOL PC P SC G SC GR AT93C46-10PC AT93C46-10PC-2.7 AT93C46-10SC AT93C46-10SC-2.7

LT3973-3.3

Abstract: 5962-8959821MMA 5962-89598 qml-38535 5962-8959824 5962-8959838MZA EDI88128CS15TB EDI88130LPS100L32B S128K8 S128K8-85MC
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED H Add device type 41. Make corrections to case outline N, dimension b. Add vendor CAGE 65786 as source of supply for device type 41. Update boilerplate. Editorial changes throughout. 97-03-26 Raymond Monnin

Contextual Info: PRELIMINARY CYPRESS 128Kx 8 Static RAM F e a tu re s F u n c tio n a l D escrip tio n • High speed — tAA = 12 ns The CY7CHWA is a high-performance CM O S static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable

ALI chipset Ali 3516

Abstract: SEM 2006 6216 static ram sem 2005 ALI chipset Ali 3510 vl82c483 ali 3516 CMOS 5408 PAL Decoder 16L8 1K x 8 static ram
Contextual Info: June 1996 Cypres Semiconductor Corporation NUMERIC DEVICE INDEX Document Number Device Number 5000 5000 3518 3518 3519 CY101E383 CY10E383 CY2071 CY2081 CY2250 3522 3509 CY2252 CY2254A 3510 CY2255 3517 CY2257 3520 CY2260 3511 3023 3024 3011 3013 3019 3006 3023

KM62256BLG-7

Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
Contextual Info: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC

PDM41257SA15D

Abstract: Paradigm 41256 PDM41024S20L32 PDM41024-S20L32 PDM41257LA15D MT5C1005C CY7C199-35DMB SRAM Cross Reference EDI84256LPS25TB 41256
Contextual Info: National Semiconductor Part Numbering System N S 41024 L 20 E -SMD Grade Package Code Speed Grade Power Level Device Type /883 MIL-STD-883 Level B AC/DC tested at –55, +25 and +125°C with High Temp Burn-in -SMD DESC Standard Military Drawing AC/DC tested at –55, +25 and +125°C with High Temp Burn-in