2410* MOSFET Search Results

Contextual Info: T em ic TN2410L, VN2406/2410 Series Semiconductors N-Channel Enhancement-Mode MOSFET Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M Product Summary Part Number n S on) M a x (Q ) V GS(th) (V) Id (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D

VN2410M

Abstract: VN2406D VN2406L VN2406M VN2410L TN2410L VN2410* mosfet tn2410 siliconix to-18
Contextual Info: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOSFET Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V

Contextual Info: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOSFET Transistors TN2410L VN2406D VN2410L VN2406L VN2410M VN2406M Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V

Contextual Info: TN2410L, VN2406/2410 Series N-Channel Enhancement-Mode MOSFET Transistors TN2410L YN2406D VN2410L VN2406L VN2410M VN2406M Product Summary P a rt N um ber r DS on M a x (Q ) V c s « h )(V ) I d (A ) TN2410L 10 @ V cs = 4.5V 0.5 to 1.8 0.18 VN2406D 6 @ VGs = 10 V

PIR CONTROLLER LP 0001

Contextual Info: UCC19411/2/3 UCC29411/2/3 UCC39411/2/3 TYPICAL CHARACTERISTICS UNITRODE CORPORATION 7 CONTINENTAL BLVD. • MERRIMACK, NH 03054 TEL. 603 424-2410 • FAX (603) 424-3460 7-65 UCC29421/2 UCC39421/2 CONNECTION DIAGRAMS ABSOLUTE MAXIMUM RATINGS Supply Voltage (VIN, VOUT,VPUMP). 8V

sml20m40bfn

Abstract: L8030
Contextual Info: im i^i llll Sem elab Power M anagem ent Division 4 GENERATION HERMETIC POWER MOSFETS Package b v dss R d s ON PD W atts Q g(n C ) O hm s lD(Cont.) Am ps Ciss(pF) Volts (Typ) (Typ) 0.260 36.0 830 11560 454 SM L10026DFN 0.500 22.0 595 5560 227 SM L10050CFN

TO-264AA

Abstract: bfc60 BFC51 SOT227 BFC24
Contextual Info: lili Sem elab Power M anagem ent Division 4 GENERATION PLASTIC POWER MOSFETS Part Package Number Type 255 BFC10 SOT227 242 BFC11 SOT227 5410 232 BFC12 SOT227 5350 228 BFC13 SOT227 BFC14 224 520 5325 56.0 IN DEVELOPMENT, ULTRA LOW RDS ON MOSFETs in SOT227 Package

apt5040an

Abstract: APT1001R1AN APT4020AN apt6040an APT5025AN
Contextual Info: APT HERMETIC MOSFET PRODUCTS Ciss pF Typ Volts Rds(ON) Ohms lD(Cont.) Amps 600 0.090 63.0 830 11270 440 APT60M90BFN 500 0.060 78.0 830 11176 420 APT50M 60BFN 400 0.042 95.0 830 11176 476 APT40M42BFN b v dss Pp Watts Qg(nC) Typ APT Part No. New Product Comments

APT1004RGN

Contextual Info: APT HERMETIC MOSFET PRODUCTS BV DSS Volts 1000 800 600 500 4UC 1000 800 R ds o n Ohms lD(Cont.) CiSS(pF) Qg(nC) A PT New Product Package Am ps Watts Typ Typ Part No. Comments Style 1.100 1.300 9.5 250 2460 90 APT1001R1HN 90 250 2460 90 APT1001R3HN 0.750

APT*1002R4BN

Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF
Contextual Info: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0

APT802R4KN

Abstract: APT6018LNR APT4030BN APT6060BN mosfet selector guide APT-6018 APT10M25bnfr APT5025BN k 3530 MOSFET 1r3b
Contextual Info: ADVANCED PO W ER Te c h n o lo g y APT MOSFET Selector Guide LOW GATE CHARGE - FAST SWITCHING FAMILY APT Part No. APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5 H0BN APT5040BN APT5050BN APT6030BN APT6033BN

os805

Abstract: sml8075hn
Contextual Info: MilitaryAerospace Division Please note th a t o u r 4th G en eration p o w er MOSFETi are currently available in Eu ro p e only. Military-Aerospace Division PowerMOS IV hermetic M O SFETs T h e latest and most efficient M O S F E T family • on the market, the P o w e r M O S I V IVI range is in

One-chip telephone IC

Abstract: telephone line voice amplifier Voice to e1 converter circuit U 4076 One-chip telephone cordless IC VN2410* mosfet BFP67 slc96 remote terminal E1 PCM encoder V30 CPU
Contextual Info: TEMIC Semiconductors Communication Segment Digital Networks Wireless Communication Wired Communication Communication We’ve been supporting advances in communications industry for decades. Today, we continue to offer the best combination of applications knowledge and leading-edge solutions required by the

Contextual Info: STP6621 P Channel Enhancement Mode MOSFET -18.0A SCRIPTION STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

BFC44

Abstract: W52A
Contextual Info: SEME BFC44 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69

APT5012

Contextual Info: Standard Power MOSFETs Power MOS V MOSFET Technology. is a patented selfaligned interdigitated open cell structure with improved switching and RDS ON advantages over our previous MOS IV® generation and over industry standard closed cell devices. Feature

BFC44

Abstract: 140-A11 7a2 diode
Contextual Info: lili IF F ! mi BFC44 SEME LAB 4TH GENERATION MOSFET TO 247-AD Package Outline. Dimensions in mm inches 4 69 (0 1151 S 31 <0 209) 1 40 (0 056) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15 40 (0 «101 VDSS ID(cont) 0 40 (0 018) 1 01 (0 040^ I Terminal 1

Si4660DY

Contextual Info: SPICE Device Model Si4660DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SML50EUZ12LC

Contextual Info: SML50EUZ12LC Enhanced Ultrafast Recovery Diode 1200 Volt, 2 X 50 Amp Back of Case Cathode SML 50EUZ12LC 1 - Anode 1 TECHNOLOGY The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

MRF8S23120HR3

Abstract: AN1955 C3225JB2A334KT j162 MRF8S23120H C5750X7R1H106KT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S23120H Rev. 0, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S23120HR3 MRF8S23120HSR3 Designed for LTE base station applications with frequencies from 2300 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S23120H Rev. 0, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S23120HR3 MRF8S23120HSR3 Designed for LTE base station applications with frequencies from 2300 to

FS5UM-14A

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5UM-14A HIGH-SPEED SWITCHING USE FS5UM-14A • VOSS .7 0 0 V • rDS ON (MAX) .2 .6 Í2

74881

Abstract: S71394 SUD50NP04-48 74*881
Contextual Info: SPICE Device Model SUD50NP04-48 Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SiR880DP

Abstract: v2410
Contextual Info: SPICE Device Model SiR880DP Vishay Siliconix N-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C