SOT227 Search Results

Contextual Info: TGH Series Specifications Material Heat Sink: Nickel-plated copper Contacts: Nickel-plated copper Substrate: Al203 96% Molding Compound: High-performance epoxy, compliant to UL94-V0 Terminal Nuts: American standard 303 stainless steel 120 and 200 Watt SOT227Package

Contextual Info: RoHS POWER - NIKKOHM 200W, 300W, 600W CHASSIS MOUNTING NON-INDUCTIVE HIGH POWER RESISTORS RPM150, RPM200, RPM250, RPM300, RPM550, RPM600 Features and Applications Small size SOT227, 200W to 600W high power resistor. Install on air-cooled heat sink or water-cooling will be necessary.

P2H30QH15

Contextual Info: TENTATIVE SBD MODULE 30A/150V P2H30QH15 OUTLINE DRAWING FEATURES * Compatible with Isolated Base SOT227 * Dual Separated Diodes * Extremely Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability See the Next Page TYPICAL APPLICATIONS

P2H80QH10

Contextual Info: SBD MODULE 80A/100V P2H80QH10 OUTLINE DRAWING FEATURES * Compatible with Isolated Base SOT227 * Dual Separated Diodes * Extremely Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability See the Next Page TYPICAL APPLICATIONS * High Frequency Rectification

P2H30F4

Abstract: 450A2S
Contextual Info: FRD MODULE P2H30F4 30A/400V OUTLINE DRAWING FEATURES * Compatible with Isolated Base SOT227 * Dual Separated Diodes * Ultra – Fast Recovery * Low Forward Voltage Drop * High Surge Capability See the Next Page TYPICAL APPLICATIONS * High Frequency Rectification

TO-264AA

Abstract: bfc60 BFC51 SOT227 BFC24
Contextual Info: lili Sem elab Power M anagem ent Division 4 GENERATION PLASTIC POWER MOSFETS Part Package Number Type 255 BFC10 SOT227 242 BFC11 SOT227 5410 232 BFC12 SOT227 5350 228 BFC13 SOT227 BFC14 224 520 5325 56.0 IN DEVELOPMENT, ULTRA LOW RDS ON MOSFETs in SOT227 Package

BUK416-200AE

Abstract: t7700
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION PINNING - SOT227B PIN 1 2 3 4 QUICK REFERENCE DATA SYMBOL isloi DS ON MAX. MAX. UNIT -200AE 200 63 310 0.035 -200BE 200 55 310 0.045 V A W n PARAMETER BUK416 Drain-source voltage

RTO50

Contextual Info: • New “Thick-Film” technology • Custom designs available • Standard package TO220, SOT227 for easy design • Compact (high power dissipation to volume ratio) • Wide resistance range • Low inductivity www.vishay.com For technical questions, contact: sfer@vishay.com

P2H80QH20

Contextual Info: SBD MODULE 80A/200V P2H80QH20 OUTLINE DRAWING FEATURES * Compatible with Isolated Base SOT227 * Dual Separated Diodes * Extremely Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability See the Next Page TYPICAL APPLICATIONS * High Frequency Rectification

P2H30QH10

Contextual Info: SBD MODULE 30A/100V P2H30QH10 OUTLINE DRAWING FEATURES * Compatible with Isolated Base SOT227 * Dual Separated Diodes * Extremely Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability See the Next Page TYPICAL APPLICATIONS * High Frequency Rectification

Contextual Info: TGH Series 120 and 200 Watt SOT227Package Thick Film Power Due to their non-inductive design, these resistors are ideally suited for high-frequency and pulse-load applications. Available in 120- or 200-watt sizes, this resistor is designed for direct mounting onto a heatsink. Popular

60N60C2D1

Abstract: 60N60C2 DI IGBT 60N60C2D1 C9VI
Contextual Info: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IXGN 60N60C2 IXGN60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) E Symbol Test Conditions V CES TJ = 25°C to 150°C D1 E Maximum Ratings 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW = 600 V = 75 A

MIC4452

Abstract: APT45M100J
Contextual Info: APT45M100J 1000V, 45A, 0.18Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT5010JVRU2

Contextual Info: APT5010JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 500V RDSon = 100mΩ max @ Tj = 25°C ID = 44A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch

E78996 rectifier module

Contextual Info: UFL60FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 60 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage

UFB60FA20P

Contextual Info: UFB60FA20P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 60 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage

GB50NA120UX

Contextual Info: GB50NA120UX Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Ultrafast IGBT , 50 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package SOT-227

VS-GB70LA60UF

Contextual Info: VS-GB70LA60UF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt hyperfast rectifier

Contextual Info: UFL60FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 60 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage

VS-UFB280FA20

Contextual Info: VS-UFB280FA20 Vishay Semiconductors Insulated Ultrafast Rectifier Module, 280 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature TJ max. = 175 °C • Low forward voltage drop

E78996 rectifier module

Abstract: UFB200FA40P IRFP250 WELDING APPLICATION NOTE
Contextual Info: UFB200FA40P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 200 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage

GB70NA60UF

Contextual Info: GB70NA60UF Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • Low VCE(on) • FRED Pt hyperfast rectifier • Fully isolated package

application notes igbt induction heating

Abstract: VS-GA100NA60UP
Contextual Info: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

E78996 rectifier module

Contextual Info: UFH60GA60P Vishay Semiconductors Tandem Insulated SOT-227 Power Module Hyperfast Rectifier, 60 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Hyperfast reverse recovery • Optimized for power conversion: welding and industrial