APT20M Search Results

APT20M22JVRU3

Contextual Info: APT20M22JVRU3 ISOTOP Buck chopper MOSFET Power Module D VDSS = 200V RDSon = 22mΩ max @ Tj = 25°C ID = 97A @ Tc = 25°C Application • • G AC and DC motor control Switched Mode Power Supplies Features S • A A S • • • Power MOS V® MOSFETs - Low RDSon

Contextual Info: APT20M22JVR ADVANCED P o w er T e c h n o lo g y 200V 97A 0 .0220. POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: A dvanced P ow er Te c h n o l o g y APT20M45BNFR APT20M60BNFR POWER MOS IV' 200V 58A 200V 50A 0.045Í2 0.060Q AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: APT20M11JVR 200V 175A 0.011Ω POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT20M11JVFR 200V POWER MOS V 0.011Ω 175A FREDFET S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT20M34BFLL APT20M34SFLL 200V 74A 0.034W POWER MOS 7TM FREDFET BFLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

Contextual Info: APT20M36BFLL APT20M36SFLL 200V 65A 0.036W POWER MOS 7TM FREDFET BFLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

APT20M38BVFR

Abstract: APT20M38BVFRG APT20M38SVFR APT20M38SVFRG
Contextual Info: 200V 67A APT20M38BVFR 0.038Ω Ω APT20M38SVFR APT20M38BVFRG* APT20M38SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS V FREDFET BVFR D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect,

APT20M45BVR

Contextual Info: APT20M45BVR 56A 0.045Ω 200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

Contextual Info: APT20M20JFLL 200V 104A 0.020Ω POWER MOS 7 R FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT 1029

Contextual Info: APT20M20WLL 200V 65A 0.022Ω POWER MOS 7 R MOSFET TO-267 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

A20M18LVFR

Abstract: APT20M18B2VFR
Contextual Info: APT20M18B2VFR A20M18LVFR 200V 100A POWER MOS V FREDFET 0.018Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT60S20

Abstract: APT20M34BLL APT20M34SLL
Contextual Info: APT20M34BLL APT20M34SLL 200V 74A 0.034Ω POWER MOS 7 R MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

tc 3086

Contextual Info: APT20M36BFLL APT20M36SFLL 200V 65A 0.036Ω R POWER MOS 7 FREDFET BFLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

20M60BNFR

Contextual Info: A d van ced P o w er Te c h n o l o g y APT20M45BNFR APT20M60BNFR POWER MOS IV< 200V 58A 200V 50A 0.045Í2 0.060Q A V A LA N C H E RATED FR EDFET N- CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol ^D S S All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: APT20M22B2VFR • R A dvanced W .\A pow er Te c h n o l o g y “ 200V POWER MOS V 100a 0.022Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: • R A dvan c ed r M po w er APT20M38BVFR Te c h n o lo g y 200V POWER MOS V o.o38q 67A FREDFET Pow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect, increases packing d ensity and reduces the on-resistance. Power M OS V®

APT20M38BVFR

Abstract: APT20M38SVFR
Contextual Info: APT20M38BVFR APT20M38SVFR 67A 0.038Ω Ω 200V POWER MOS V FREDFET BVFR D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also

DIODE 424

Abstract: APT20M20JLL
Contextual Info: APT20M20JLL 200V 106A 0.020 W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

APT20M45SVFR

Contextual Info: APT20M45SVFR 200V POWER MOS V 56A 0.045Ω FREDFET D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT20M16B2LL

Abstract: APT20M16LLL 050701
Contextual Info: APT20M16B2LL APT20M16LLL 200V 100A 0.016Ω POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT20M22JVRU3 ISOTOP Buck chopper MOSFET Power Module D VDSS = 200V RDSon = 22m max @ Tj = 25°C ID = 97A @ Tc = 25°C Application •  G AC and DC motor control Switched Mode Power Supplies Features S  A A S    Power MOS V® MOSFETs - Low RDSon

PF-8500

Contextual Info: APT20M22B2VFR G *G Denotes RoHS Compliant, Pb Free Terminal Finish. 200V 100A 0.022Ω POWER MOS V FREDFET T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect,

Contextual Info: • R A dvanced W .\A APT20M38BVR pow er Te c h n o l o g y “ 200V 67a o.o 38q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®