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    20N60 G Search Results

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    onsemi FCP20N60_G

    MOSFET N-CH 600V 20A TO220-3
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    DigiKey FCP20N60_G Bulk
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    Vishay Intertechnologies SIHH120N60E-T1-GE3

    MOSFETs 600V Vds; +/-30V Vgs PowerPAK 8x8
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    Mouser Electronics SIHH120N60E-T1-GE3 1,888
    • 1 $6.03
    • 10 $3.95
    • 100 $3.18
    • 1000 $3.18
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    Vishay Intertechnologies SIHR120N60E-T1-GE3

    MOSFETs N-CHANNEL 600V
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    Mouser Electronics SIHR120N60E-T1-GE3 1,855
    • 1 $7.42
    • 10 $4.99
    • 100 $3.94
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    onsemi FGB20N60SFD-F085

    IGBTs 600V 20A FSP IGBT
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    Mouser Electronics FGB20N60SFD-F085 1,420
    • 1 $5.19
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    Vishay Intertechnologies SIHP120N60E-GE3

    MOSFETs 650V Vds; 30V Vgs TO-220AB
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    Mouser Electronics SIHP120N60E-GE3 969
    • 1 $6.37
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    20N60 G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXYS CS 2-12

    Contextual Info: □IXYS IXFH 15N60 IXFH 20N60 HiPerFET Power MOSFETs •TM IXFH/FM 15N60 IXFH/FM 20N60 IXFM 15N60 IXFM 20N60 □ V DSS ^D25 600 V 600 V 15 A 20 A DS on K 0.50 Q. 250 ns 0.35 Q 250 ns N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS Family TO-247 AD


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    15N60 20N60 O-247 IXYS CS 2-12 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


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    20N60 20N60 QW-R502-587 PDF

    mosfet 20n60

    Abstract: 600V 20A N-Channel MOSFET TO-3P 20n60 G mosfet 20n60 600v 20N60 mosfet 20N60G-T3P-T N-Channel 600V MOSFET 20N60
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


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    20N60 20N60 O-247 QW-R502-587 mosfet 20n60 600V 20A N-Channel MOSFET TO-3P 20n60 G mosfet 20n60 600v 20N60 mosfet 20N60G-T3P-T N-Channel 600V MOSFET PDF

    mosfet 20n60

    Abstract: IDA14 600V 20A N-Channel MOSFET TO-3P 20N60 mosfet
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


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    20N60 20N60 20N60L-T47-T 20N6ntarily, QW-R502-587 mosfet 20n60 IDA14 600V 20A N-Channel MOSFET TO-3P 20N60 mosfet PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


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    20N60 20N60 QW-R502-587 PDF

    mosfet 20n60

    Abstract: 20n60
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


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    20N60 20N60 QW-R502-587 mosfet 20n60 PDF

    20N60

    Abstract: 20N60 mosfet
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


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    20N60 20N60 QW-R502-587 20N60 mosfet PDF

    20N60

    Contextual Info: MegaMOSTMFET IXTH 20N60 IXTM 20N60 VDSS = 600 V ID25 = 20 A RDS on = 0.35 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient


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    20N60 15N60 O-247 O-204 O-204 O-247 20N60 PDF

    20N60 datasheet

    Abstract: 20N60 20n60 G 20N60 to220 20N60B IGBT 20N60
    Contextual Info: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings


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    20N60 20N60B O-220 20N60B IXDP20N06B 20N60 datasheet 20n60 G 20N60 to220 IGBT 20N60 PDF

    Contextual Info: High Voltage IGBT with optional Diode IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Speed, Low Saturation Voltage C G Preliminary Data G G C E E E IXDP 20N60B D1 Symbol Conditions VCES TJ = 25°C to 150°C TO-220 AB C G = Gate,


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    20N60 20N60B O-220 PDF

    20n60

    Abstract: 20N60 datasheet p 20n60 15n60 20n60 to-247
    Contextual Info: MegaMOSTMFET IXTH 20N60 IXTM 20N60 VDSS = 600 V = 20 A ID25 RDS on = 0.35 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient


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    20N60 15N60 O-247 O-204 O-204 O-247 20n60 20N60 datasheet p 20n60 15n60 20n60 to-247 PDF

    30n60

    Abstract: G 40N60 igbt Insulated Gate Bipolar Transistors igbt 30N60 40n60 igbt 40n60 25N100 45N10
    Contextual Info: Insulated Gate Bipolar Transistors IGBT Insulated Gate Bipolar Transistors (IGBT) "S" series with improved SCSOA capability T ft* w ^0 *c Te . w c max. • ■ ■ ■ I »M m P ggM S i Billi IXSH IXSH IXSH IXSH IXSH IXSH 20N60 30N60 40N60 25N100 45N100


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    20N60 30N60 40N60 25N100 45N100 45N120 O-247 G 40N60 igbt Insulated Gate Bipolar Transistors igbt 30N60 40n60 igbt 45N10 PDF

    20n60

    Abstract: 15N60 20N60 datasheet 20n60 G 20n60 to-247 20N6065 K 15N60 15n60 TO-247 IXFM20N60
    Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 15N60 20N60 15 20 A A


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    15N60 20N60 20n60 15N60 20N60 datasheet 20n60 G 20n60 to-247 20N6065 K 15N60 15n60 TO-247 IXFM20N60 PDF

    15N60

    Abstract: 20N60 sd 20n60 20n60 G K 15N60 15n60 TO-247 20n60 to-247 20N60NS SD 10 N60
    Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 600 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 15N60 20N60 15 20


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    15N60 20N60 15N60 20N60 sd 20n60 20n60 G K 15N60 15n60 TO-247 20n60 to-247 20N60NS SD 10 N60 PDF

    15n60

    Abstract: f sss 20n60 15N60A IXTM15N60 IXTH15N60 20n60 5196 IXTH20n60 to-247 D-68623 IXTH20N60
    Contextual Info: v M e g a M O S p DSS 600 V 600 V F E T *D25 DS on 15 A 0.50 Q 20 A 0.35 Q N-Channel Enhancement Mode Symbol TestConditions VDSS Tj = 25 °C to 150°C 600 V v DGR Tj = 25 °C to 150°C; RGS= 1 MQ 600 V V6S VGSM Continuous +20 V Transient ±30 V ^D25 Tc = 25 °C


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    O-247 15N60 20N60 O-204 O-247 100ms f sss 20n60 15N60A IXTM15N60 IXTH15N60 5196 IXTH20n60 to-247 D-68623 IXTH20N60 PDF

    20N60

    Abstract: 15N60 K 15N60 15n60 TO-247 20n60 G
    Contextual Info: VDSS MegaMOSTMFET IXTH/IXTM 15 N60 IXTH/IXTM 20 N60 600 V 600 V ID25 RDS on 15 A 0.50 Ω 20 A 0.35 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous


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    15N60 20N60 O-204 O-247 O-204 O-247 20N60 15N60 K 15N60 15n60 TO-247 20n60 G PDF

    Contextual Info: IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A Low VCE sat IGBT High speed IGBT Maximum Ratings Symbol Test Conditions VCES T j = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 Mi2 600 V v GES Continuous ±20 V VGEM T ransient ±30 V U25 Tc = 25°C 40 A ^C90


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    O-247 DDD3S72 PDF

    20n60a40

    Abstract: 20N60A 20N60 20N60A9 igbt 20n60
    Contextual Info: Not for new designs Low VCE sat IGBT High Speed IGBT IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    O-247 O-204 O-204AE 20N60 20N60A 20N60U1 20N60AU1 20n60a40 20N60A9 igbt 20n60 PDF

    IGBT 20N60

    Abstract: 20N60 20N60A 20n60 igbt N60A 20n60 G IXSM20N60A MJ1000
    Contextual Info: Low VCE sat IGBT High Speed IGBT IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ


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    O-247 20N60 20N60A O-204AE IGBT 20N60 20N60 20N60A 20n60 igbt N60A 20n60 G IXSM20N60A MJ1000 PDF

    20N60A

    Abstract: f 20n60a N60A 20N60 20N60AU1 IXGH 20 N60A 30NC60 igbt 20n60
    Contextual Info: Low VCE sat IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 40 A IC90


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    20N60 20N60A O-204AE 20N60 20N60A 20N60U1 20N60AU1 f 20n60a N60A IXGH 20 N60A 30NC60 igbt 20n60 PDF

    20N60AU

    Abstract: 20N60A g20n60 N60A 20N60 30 N60A bt 151 600 20n60 G LT0B igbt 20n60
    Contextual Info: Not for new designs IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A Low VCE sat IGBT High Speed IGBT VC E S ^C25 Vy C E (sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Short Circuit SOA Capability §Symbol Test Conditions VCES Tj v v v Maximum Ratings = 25°C to 150°C 600 V


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    O-247 T0-204AE 20N60AU 20N60A g20n60 N60A 20N60 30 N60A bt 151 600 20n60 G LT0B igbt 20n60 PDF

    TRANSFORMER ERL35

    Abstract: CM6800TX opto 817c ERL 35 OPTOCOUPLER 817c 817c 817C optocoupler erl-35 c ERL-35 ERL 35 transformer
    Contextual Info: CM6800T Turbo-Speed PFC+Green PWM EPA/85+ PFC+PWM COMBO CONTROLLER http://www.championmicro.com.tw Design for High Efficient Power Supply GENERAL DESCRIPTION FEATURES CM6800T is a turbo-speed PFC and a Green PWM controller. It is designed to further increase power supply efficiency while


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    CM6800T EPA/85+ CM6800T CM6800 TRANSFORMER ERL35 CM6800TX opto 817c ERL 35 OPTOCOUPLER 817c 817c 817C optocoupler erl-35 c ERL-35 ERL 35 transformer PDF

    Contextual Info: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62


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    20N60 30N60 40N60 25N100 45N100 45N120 40N60AU1 35N100U1 55N100U1Â 52N60AU1Â PDF

    CM6800TX

    Abstract: ERL 35 transformer IN5406 CT IN5406 CM6800T erl-35 CM6800T X TRANSFORMER ERL 35 IN5406 diode TRANSFORMER ERL35
    Contextual Info: CM6800T Turbo-Speed PFC+Green PWM EPA/85+ PFC+PWM COMBO CONTROLLER http://www.championmicro.com.tw Design for High Efficient Power Supply GENERAL DESCRIPTION FEATURES CM6800T is a turbo-speed PFC and a Green PWM controller. It is designed to further increase power supply efficiency while


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    CM6800T EPA/85+ CM6800T CM6800 CM6800TX ERL 35 transformer IN5406 CT IN5406 erl-35 CM6800T X TRANSFORMER ERL 35 IN5406 diode TRANSFORMER ERL35 PDF