S20N6 Search Results
S20N6 Datasheets (7)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| S20N600JA | AEI Semiconductors | Power Semiconductors Data Book 1974 | Scan | 63.17KB | 1 | ||
| S20N600JA | Unknown | Shortform Semicon, Diode, and SCR Datasheets | Short Form | 146.41KB | 1 | ||
CWS20N60AZ
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Wuhan Xinyuan Semiconductor Co Ltd | 600V N-Channel Super Junction MOSFET CWS20N60A with 190 mΩ RDS(on), 20A continuous drain current, fast switching capability, low gate charge, and avalanche rugged technology for high-efficiency power applications. | Original | ||||
CWS20N60AC
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Wuhan Xinyuan Semiconductor Co Ltd | 600V N-Channel Super Junction MOSFET CWS20N60A with 190 mΩ RDS(on), 20A continuous drain current, fast switching capability, low gate charge, and avalanche rugged technology for high-efficiency power applications. | Original | ||||
CWS20N60AF
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Wuhan Xinyuan Semiconductor Co Ltd | 600V N-Channel Super Junction MOSFET CWS20N60A with 190 mΩ RDS(on), 20A continuous drain current, fast switching capability, low gate charge, and avalanche rugged technology for high-efficiency power applications. | Original | ||||
CWS20N65AF
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Wuhan Xinyuan Semiconductor Co Ltd | 650V N-Channel Super Junction MOSFET with 190 mΩ RDS(on) and 20A continuous drain current, designed for high-efficiency power applications including PFC, SMPS, UPS, LED lighting, and high-performance adapters. | Original | ||||
CWS20N65AP8R
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Wuhan Xinyuan Semiconductor Co Ltd | 650V N-Channel Super Junction MOSFET with 190 mΩ RDS(on) and 20A continuous drain current, designed for high-efficiency power applications including PFC, SMPS, UPS, LED lighting, and high-performance adapters. | Original |
S20N6 Price and Stock
Rochester Electronics LLC HGT1S20N60B3SIGBT 600V 40A TO-263AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HGT1S20N60B3S | Bulk | 635 | 88 |
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Rochester Electronics LLC HGT1S20N60C3RIGBT 600V 40A TO-262 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HGT1S20N60C3R | Bulk | 505 | 136 |
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Toshiba America Electronic Components TRS20N65FB,S1QDIODE ARRAY SIC 650V 10A TO-247 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TRS20N65FB,S1Q | Tube | 240 | 1 |
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TRS20N65FB,S1Q | Tube | 24 Weeks | 30 |
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TRS20N65FB,S1Q | 30 |
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TRS20N65FB,S1Q | Tube | 30 |
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Toshiba America Electronic Components TRS20N65D,S1FDIODE ARR SCHOTT 650V 10A TO-247 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TRS20N65D,S1F | Tube |
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onsemi HGT1S20N60A4S9AIGBT 600V 70A TO-263 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HGT1S20N60A4S9A | Tube |
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S20N6 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
20N60 equivalent
Abstract: 20n60c* equivalent 20n60 c equivalent 20n60 intersil 20n60c3 20N60C3R hg*20n60
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Original |
HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3RS G20N6 20N60 S20N6 20N60 equivalent 20n60c* equivalent 20n60 c equivalent 20n60 intersil 20n60c3 20N60C3R hg*20n60 | |
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Contextual Info: S20N65D SiC Schottky Barrier Diode S20N65D 1. Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2. Features 1 Forward DC current(Per Leg/Both Legs) IF(DC) = 10/20 A (2) Repetitive peak reverse voltage VRRM = 650 V |
Original |
TRS20N65D O-247 | |
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Contextual Info: S20N65D SiC Schottky Barrier Diode S20N65D 1. Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2. Features 1 Forward DC current(Per Leg/Both Legs) IF(DC) = 10/20 A (2) Repetitive peak reverse voltage VRRM = 650 V |
Original |
TRS20N65D O-247 |