G20N6 Search Results

20N60 equivalent

Abstract: 20n60c* equivalent 20n60 c equivalent 20n60 intersil 20n60c3 20N60C3R hg*20n60
Contextual Info: [ /Title HGT G20N6 0C3R, HGTP 20N60 C3R, HGT1 S20N6 0C3RS /Subject (40A, 600V, Rugged UFS Series NChannel IGBTs ) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche G20N60C3R, HGTP20N60C3R, HGT1S20N60C3RS T UCT ROD RODUC P E P T E

20N60C3DR

Abstract: g20n60c3d 20n60c3
Contextual Info: [ /Title HGT G20N6 0C3D R /Subject (40A, 600V, Rugged, UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche CT ODU ODUCT R P PR TE OLE UTE OBS UBSTIT 0C3D ES N6 SIBL HGTG20 S O

931 diode smd

Abstract: g20n60
Contextual Info: □ IXYS V CES IXGH 24N60AU1 IXGH 24N60AU1S ^C25 V CE sat t fi HiPerFAST IGBT with Diode Combi Pack Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V vWGES Continuous ±20 V V* GEM Transient

IXGH20N60AU1

Abstract: IXGH20N60U1 20N60AU1 *GH20N60AU1
Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode VCES Combi Packs IXGH 20 N60U1 600 V IXGH 20 N60AU1 600 V Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 600 600 V V VGES VGEM Continuous Transient

Contextual Info: SGB20N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

g20n60hs

Abstract: G20N60 RY 227 Tf 227 10A SGP20N60HS 160W PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 SGW20N60HS
Contextual Info: SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability

g20n60

Abstract: HGT1S20N60C3S9A G20N60C3 HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 RHRP3060 TA49178 TB334 ic2545a
Contextual Info: G20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

HG20N60B3

Abstract: hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 hg*20n60 g20n60 vqe 24 d HGTG20N60B3 G20N60B
Contextual Info: interrii HGT1S20N60B3S, HGTP20N60B3, G20N60B3 J a n u a ry . m Data Sheet 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the HGTP20N60B3 and the G20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs

relay 12v 1c/o

Abstract: 12V 1C/O relay G20N60C3 Transistor No C110 transistor C110 HGT1S20N60C3S9A G20N60 N-CHANNEL 45A TO-247 POWER MOSFET TA49178 HGTG20N60C3
Contextual Info: G20N60C3, HGTP20N60C3, HGT1S20N60C3S in t e r r ii J a n u a ry . m Data Sheet 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

G20N60B3D

Abstract: TA49016 G20N60B3 transistor C110 C110 HGTG20N60B3D LD26 RHRP3060 hgtg20n
Contextual Info: G20N60B3D interrii J a n u a ry . m D ata S h eet 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G20N60B3D is a MOS gated high voltage switching device com bining the best features of MOSFETs and bipolar transistors. The device has the high input

G20N60

Abstract: G20N60 IGBT
Contextual Info: SGP20N60 SGW20N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

g20n60

Abstract: G20N60 IGBT
Contextual Info: SGB20N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

G20N60B3D

Abstract: G20N60B hg*20n60 Hgtg20n60
Contextual Info: G20N60B3D S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode November 1997 Features Description • 40A, 600V at TC = 25oC • Hyperfast Anti-Parallel Diode The G20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and

G20N60

Abstract: 24n60au1 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247
Contextual Info: IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE sat tfi HiPerFASTTM IGBT with Diode Combi Pack Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 48

HG20N60B3

Abstract: hG20N60 G20N60B3 hg20n60b3 equivalent HG20N60B
Contextual Info: HGTP20N60B3, G20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBTs November 1997 Features Description • 40A, 600V at TC = 25oC The HGTP20N60B3 and the G20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a

G20N60B3

Abstract: G20N60 HGTG20N60B3 G20N60B HGTP20N60B3 LD26 RHRP3060 hg*20n60
Contextual Info: HGTP20N60B3, G20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT February 1996 Features • • • • • Package JEDEC TO-220AB COLLECTOR EMITTER 40A, 600V at TC = +25oC Square Switching SOA Capability Typical Fall Time - 140ns at +150oC

G20N60B3D

Abstract: BVces HGTG20N60B3D LD26 RHRP3060 igbt 600V 45UH
Contextual Info: S E M I C O N D U C T O R G20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1996 Features Package • 40A, 600V at TC = +25oC JEDEC STYLE TO-247 • Typical Fall Time - 140ns at +150oC E C • Short Circuit Rated

g20n60c3d

Abstract: g20n60c3d equivalent HGTG20N60C3D LD26 RHRP3060 TA49063 TA49178 g20n60 HGTG20N60C3
Contextual Info: G20N60C3D Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input

G20N60B3

Abstract: MOSFET 40A 600V HGTG20N60B3 HGTP20N60B3 LD26 RHRP3060 TA49050
Contextual Info: HGTP20N60B3, G20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBTs January 1997 Features • • • • • Package JEDEC TO-220AB COLLECTOR EMITTER 40A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . . . . . . . 140ns at 150oC

g20n60

Abstract: G20N60 IGBT
Contextual Info: SGP20N60 SGW20N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

G20N60

Abstract: G20N60 IGBT
Contextual Info: SGP20N60 SGW20N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

Contextual Info: SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability

G20N60

Contextual Info: SGP20N60 SGW20N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

g20n60

Abstract: G20N60 IGBT
Contextual Info: SGB20N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: