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    HGTG20N60 Search Results

    HGTG20N60 Datasheets (37)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    HGTG20N60A4
    		Fairchild Semiconductor 600 V, SMPS N-Channel IGBT Original PDF 140.21KB 8
    HGTG20N60A4
    		Fairchild Semiconductor 600V, SMPS Series N-Channel IGBTs Original PDF 77.87KB 8
    HGTG20N60A4
    		Fairchild Semiconductor IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 70A 290W TO247 Original PDF 9
    HGTG20N60A4
    		Intersil 600V, SMPS Series N-Channel IGBTs Original PDF 360.24KB 9
    HGTG20N60A4D
    		Fairchild Semiconductor 600 V, SMPS N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF 164.51KB 9
    HGTG20N60A4D
    		Fairchild Semiconductor 600V Original PDF 104.85KB 9
    HGTG20N60A4D
    		Intersil 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF 357.41KB 9
    HGTG20N60A4D_NL
    		Fairchild Semiconductor 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF 151.67KB 9
    HGTG20N60A4_NL
    		Fairchild Semiconductor 600V, SMPS Series N-Channel IGBTs Original PDF 140.19KB 8
    HGTG20N60B3
    		Fairchild Semiconductor 40 A, 600 V, UFS N-Channel IGBT Original PDF 192.9KB 7
    HGTG20N60B3
    		Fairchild Semiconductor 600V, UFS Series N-Channel IGBT Original PDF 159.89KB 7
    HGTG20N60B3
    		Harris Semiconductor 600V / 1200V UFS Series IGBTs Original PDF 45.36KB 2
    HGTG20N60B3
    		Intersil 40A, 600V, UFS Series N-Channel IGBTs Original PDF 141.03KB 6
    HGTG20N60B3
    		Intersil Obsolete Product Datasheet Scan PDF 448.24KB 6
    HGTG20N60B3
    		Intersil 40A, 600V, UFS Series N-Channel lGBTs Scan PDF 448.22KB 6
    HGTG20N60B3D
    		Fairchild Semiconductor 40 A, 600 V, UFS N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF 180.57KB 7
    HGTG20N60B3D
    		Fairchild Semiconductor 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF 154.71KB 7
    HGTG20N60B3D
    		Harris Semiconductor 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF 154.24KB 6
    HGTG20N60B3D
    		Harris Semiconductor 600V / 1200V UFS Series IGBTs Original PDF 45.36KB 2
    HGTG20N60B3D
    		Intersil 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF 137.24KB 6
    SF Impression Pixel

    HGTG20N60 Price and Stock

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    onsemi HGTG20N60A4

    IGBT 600V 70A TO-247-3
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    DigiKey HGTG20N60A4 Tube
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    Newark HGTG20N60A4 Bulk 90
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    FLIP ELECTRONICS HGTG20N60B3

    IGBT 600V 40A TO-247-3
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    DigiKey HGTG20N60B3 Tube 200
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    Rochester Electronics LLC HGTG20N60B3

    IGBT 600V 40A TO-247
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    DigiKey HGTG20N60B3 Tube 89
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    onsemi HGTG20N60B3

    IGBT 600V 40A TO-247-3
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    Avnet Americas HGTG20N60B3 Tube 269
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    Rochester Electronics HGTG20N60B3 11,700 1
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    Avnet Silica HGTG20N60B3 53 Weeks 240
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    Flip Electronics HGTG20N60B3 2,700
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    onsemi HGTG20N60B3D

    IGBT 600V 40A TO-247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTG20N60B3D Tube 450
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    Chip Stock HGTG20N60B3D 4,300
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    Find more HGTG20N60 price and stock on Findchips.com

    HGTG20N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HG20N60B3

    Abstract: hG20N60 hg20n60b3 equivalent
    Contextual Info: HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state


    Original     		HGTG20N60B3 HGTG20N60B3 150oC. HG20N60B3 hG20N60 hg20n60b3 equivalent PDF

    P channel 600v 20a IGBT

    Abstract: hg*20n60 600v HGTG30N60C3D 1200v 20a IGBT 1200v 30A to247 LC96585 UFS Series P-Channel HGTD3N60B3 HGTD3N60C3
    Contextual Info: HGTG20N60C3R HGTG20N60C3DR 2.3V TBD µJ HGTG30N60C3R HGTG30N60C3DR 2.3V TBD µJ HGTG20N60B3 HGTG20N60B3D 2.0V 1050µJ HGTG30N60B3 HGTG30N60B3D 2.2V 1700µJ HGTG40N60B3 2.0V 2500µJ HGTG20N60C3 HGTG20N60C3D 1.8V 1500µJ HGTG30N60C3 HGTG30N60C3D 1.8V 2500µJ


    Original     		HGTD3N60C3 HGTD7N60C3 HGTD3N60C3R HGTD7N60C3R 200ns HGTD3N60B3 HGTD7N60B3 HGTG20N60C3R HGTG20N60C3DR HGTG30N60C3R P channel 600v 20a IGBT hg*20n60 600v HGTG30N60C3D 1200v 20a IGBT 1200v 30A to247 LC96585 UFS Series P-Channel HGTD3N60B3 HGTD3N60C3 PDF

    20n60c3DR

    Abstract: 20n60c3 HGTG20N60C3DR 20n60c* equivalent INTEPOWER HGTG LD26 RURP1560 20N60C3D
    Contextual Info: HGTG20N60C3DR S E M I C O N D U C T O R 40A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode November 1996 Features Description • 40A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as


    Original     		HGTG20N60C3DR 150oC 330ns 1-800-4-HARRIS 20n60c3DR 20n60c3 HGTG20N60C3DR 20n60c* equivalent INTEPOWER HGTG LD26 RURP1560 20N60C3D PDF

    g20n60

    Abstract: HGT1S20N60C3S9A G20N60C3 HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 RHRP3060 TA49178 TB334 ic2545a
    Contextual Info: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S 150oC. 108ns 150oC g20n60 HGT1S20N60C3S9A G20N60C3 HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 RHRP3060 TA49178 TB334 ic2545a PDF

    HG20N60B3

    Abstract: Series 475 Rev-B3 hG20N60 hg20n60b3 equivalent 475 Rev-B3 HGTG20N60B3 LD26 RHRP3060 TB334 hg20n
    Contextual Info: HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state


    Original     		HGTG20N60B3 HGTG20N60B3 150oC. TB334lopment. HG20N60B3 Series 475 Rev-B3 hG20N60 hg20n60b3 equivalent 475 Rev-B3 LD26 RHRP3060 TB334 hg20n PDF

    HG20N60B3

    Abstract: hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 hg*20n60 g20n60 vqe 24 d HGTG20N60B3 G20N60B
    Contextual Info: interrii HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 J a n u a ry . m Data Sheet 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs


    OCR Scan     		HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 HGTP20N60B3 HGTG20N60B3 HG20N60B3 hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 hg*20n60 g20n60 vqe 24 d G20N60B PDF

    20N60C3R

    Contextual Info: HARRIS HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS S E M I C O N D U C T O R 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description • 40A, 600V T j = 25°C This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as


    OCR Scan     		HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS 20N60C3R PDF

    20N60C3DR

    Contextual Info: X HGTG20N60C3DR M Aß , 40A, 600V, Rugged, UFS Series N-C hannel IGBT w ith A nti-Parallel U ltrafast Diode November 1996 Features Description • 40A, 600V at T c = 25°C This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as


    OCR Scan     		HGTG20N60C3DR 330ns 20N60C3DR PDF

    relay 12v 1c/o

    Abstract: 12V 1C/O relay G20N60C3 Transistor No C110 transistor C110 HGT1S20N60C3S9A G20N60 N-CHANNEL 45A TO-247 POWER MOSFET TA49178 HGTG20N60C3
    Contextual Info: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S in t e r r ii J a n u a ry . m Data Sheet 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    OCR Scan     		TA49178. HGTG20N60C3 O-247 G20N60C3 relay 12v 1c/o 12V 1C/O relay G20N60C3 Transistor No C110 transistor C110 HGT1S20N60C3S9A G20N60 N-CHANNEL 45A TO-247 POWER MOSFET TA49178 PDF

    G20N60B3D

    Abstract: TA49016 G20N60B3 transistor C110 C110 HGTG20N60B3D LD26 RHRP3060 hgtg20n
    Contextual Info: HGTG20N60B3D interrii J a n u a ry . m D ata S h eet 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60B3D is a MOS gated high voltage switching device com bining the best features of MOSFETs and bipolar transistors. The device has the high input


    OCR Scan     		HGTG20N60B3D HGTG20N60B3D RHRP3060. TA49016. G20N60B3D TA49016 G20N60B3 transistor C110 C110 LD26 RHRP3060 hgtg20n PDF

    G20N60B3D

    Abstract: G20N60B hg*20n60 Hgtg20n60
    Contextual Info: HGTG20N60B3D S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode November 1997 Features Description • 40A, 600V at TC = 25oC • Hyperfast Anti-Parallel Diode The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and


    Original     		HGTG20N60B3D HGTG20N60B3D 150oC. RHRP3060. G20N60B3D G20N60B3D G20N60B hg*20n60 Hgtg20n60 PDF

    HGTP7N60B3D

    Abstract: 1200v diode to247 1200v 30A to247 TO220AB IGBT 1200v HGTD3N60C3R DIODE 3A 600V HGTD3N60B3 HGTD3N60C3 HGTD3N60C3RS HGTD7N60B3S
    Contextual Info: 2-3 HGTG20N60C3R HGTG20N60C3DR 2.3V 3000µJ HGTG27N60C3R HGTG27N60C3DR 2.3V 2000µJ HGTG20N60B3 HGTG20N60B3D 2.0V 1050µJ HGTG30N60B3 HGTG30N60B3D 2.2V 1700µJ HGTG40N60B3 2.0V 2500µJ HGTG20N60C3 HGTG20N60C3D 1.8V 1500µJ HGTG30N60C3 HGTG30N60C3D 1.8V 2500µJ


    Original     		HGTD3N60C3 HGTD7N60C3 HGTD3N60C3R HGTD7N60C3R 200ns HGTD3N60B3 HGTD7N60B3 HGTG20N60C3R HGTG20N60C3DR HGTG27N60C3R HGTP7N60B3D 1200v diode to247 1200v 30A to247 TO220AB IGBT 1200v HGTD3N60C3R DIODE 3A 600V HGTD3N60B3 HGTD3N60C3 HGTD3N60C3RS HGTD7N60B3S PDF

    20n60c3

    Abstract: 20N60C3R HGT1S20N60C3RS HGTP20N60C3R HGT1S20N60C3RS9A HGTG20N60C3R RURP1560 HGT1S20N60C3R
    Contextual Info: HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS S E M I C O N D U C T O R 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description • 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as


    Original     		HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS 150oC 330ns 1-800-4-HARRIS 20n60c3 20N60C3R HGT1S20N60C3RS HGTP20N60C3R HGT1S20N60C3RS9A HGTG20N60C3R RURP1560 HGT1S20N60C3R PDF

    HGTG20N60A4D

    Contextual Info: HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		HGTG20N60A4D HGTG20N60A4D 150oC. TA49339. TA49372. PDF

    HG20N60B3

    Abstract: hG20N60 HG20N60B hg20n60b3 equivalent TA49050 HGTG20N60B3 LD26 RHRP3060 TB334 hg20n
    Contextual Info: HGTG20N60B3 Data Sheet August 2003 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state


    Original     		HGTG20N60B3 HGTG20N60B3 150oC. TB334 HG20N60B3 hG20N60 HG20N60B hg20n60b3 equivalent TA49050 LD26 RHRP3060 hg20n PDF

    HG20N60B3

    Abstract: hG20N60 G20N60B3 hg20n60b3 equivalent HG20N60B
    Contextual Info: HGTP20N60B3, HGTG20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBTs November 1997 Features Description • 40A, 600V at TC = 25oC The HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a


    Original     		HGTP20N60B3, HGTG20N60B3 HGTP20N60B3 HGTG20N60B3 150oC. TA49050. 1-800-4-HARRIS HG20N60B3 hG20N60 G20N60B3 hg20n60b3 equivalent HG20N60B PDF

    G20N60B3

    Abstract: G20N60 HGTG20N60B3 G20N60B HGTP20N60B3 LD26 RHRP3060 hg*20n60
    Contextual Info: HGTP20N60B3, HGTG20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT February 1996 Features • • • • • Package JEDEC TO-220AB COLLECTOR EMITTER 40A, 600V at TC = +25oC Square Switching SOA Capability Typical Fall Time - 140ns at +150oC


    Original     		HGTP20N60B3, HGTG20N60B3 O-220AB 140ns 150oC O-247 HGTP20N60B3 HGTG20N60B3 1-800-4-HARRIS G20N60B3 G20N60 G20N60B LD26 RHRP3060 hg*20n60 PDF

    G20N60B3D

    Abstract: BVces HGTG20N60B3D LD26 RHRP3060 igbt 600V 45UH
    Contextual Info: S E M I C O N D U C T O R HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1996 Features Package • 40A, 600V at TC = +25oC JEDEC STYLE TO-247 • Typical Fall Time - 140ns at +150oC E C • Short Circuit Rated


    Original     		HGTG20N60B3D O-247 140ns 150oC HGTG20N60B3D 150oC. RHRP3060 1-800-4-HARRIS G20N60B3D BVces LD26 igbt 600V 45UH PDF

    20N60A4D

    Abstract: HGTG20N60A4D 20N60A4 TA49341 TA49339 TA49372 IFM110 LD26 TO247
    Contextual Info: HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		HGTG20N60A4D HGTG20N60A4D 150oC. TA49339. TA49372. 20N60A4D 20N60A4 TA49341 TA49339 TA49372 IFM110 LD26 TO247 PDF

    g20n60c3d

    Abstract: g20n60c3d equivalent HGTG20N60C3D LD26 RHRP3060 TA49063 TA49178 g20n60 HGTG20N60C3
    Contextual Info: HGTG20N60C3D Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		HGTG20N60C3D HGTG20N60C3D 150oC. TA49178. RHRP3060 TA49063) g20n60c3d g20n60c3d equivalent LD26 RHRP3060 TA49063 TA49178 g20n60 HGTG20N60C3 PDF

    G20N60B3

    Abstract: MOSFET 40A 600V HGTG20N60B3 HGTP20N60B3 LD26 RHRP3060 TA49050
    Contextual Info: HGTP20N60B3, HGTG20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBTs January 1997 Features • • • • • Package JEDEC TO-220AB COLLECTOR EMITTER 40A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . . . . . . . 140ns at 150oC


    Original     		HGTP20N60B3, HGTG20N60B3 O-220AB 140ns 150oC O-247 HGTP20N60B3 HGTG20N60B3 1-800-4-HARRIS G20N60B3 MOSFET 40A 600V LD26 RHRP3060 TA49050 PDF

    20N60A4

    Abstract: 20N60A4 equivalent TA49339
    Contextual Info: HGTG20N60A4, HGTP20N60A4 Data Sheet October 1999 File Number 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		HGTG20N60A4, HGTP20N60A4 HGTG20N60A4 HGTP20N60A4 150oC. TA49339. 100kHz 20N60A4 20N60A4 equivalent TA49339 PDF

    G20N60C3D

    Abstract: HGTG20N60C3D RHRP3060 TA49063 TA49178 TA49179
    Contextual Info: HGTG20N60C3D Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		HGTG20N60C3D HGTG20N60C3D 150oC. TA49178. RHRP3060 TA49063) G20N60C3D RHRP3060 TA49063 TA49178 TA49179 PDF

    20N60A4

    Abstract: 20N60A4 equivalent TA49339 IGBT 20n60a4 20N60A HGTG20N60A4 ICE 280 HGTG20N60A4D HGTP20N60A4 LD26
    Contextual Info: HGTG20N60A4, HGTP20N60A4 Data Sheet Title GT 0N6 4, GTP N60 bt 0V, MPS ries October 1999 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		HGTG20N60A4, HGTP20N60A4 HGTG20N60A4 HGTP20N60A4 150oC. 100kHz 20N60A4 20N60A4 equivalent TA49339 IGBT 20n60a4 20N60A ICE 280 HGTG20N60A4D LD26 PDF