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    Vishay Intertechnologies SIHG20N50E-GE3

    Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHG20N50E-GE3 88 1
    • 1 $4.58
    • 10 $3.16
    • 100 $2.15
    • 1000 $1.92
    • 10000 $1.92
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    Avnet Americas SIHG20N50E-GE3 Bulk 45 Weeks 500
    • 1 -
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    • 100 -
    • 1000 $1.59
    • 10000 $1.52
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    Mouser Electronics SIHG20N50E-GE3 964
    • 1 $5.07
    • 10 $2.84
    • 100 $2.40
    • 1000 $1.85
    • 10000 $1.85
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    Newark SIHG20N50E-GE3 Bulk 500 500
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    • 1000 $2.25
    • 10000 $2.14
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    TTI SIHG20N50E-GE3 Tube 1,150 50
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    • 100 $2.34
    • 1000 $1.85
    • 10000 $1.85
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    EBV Elektronik SIHG20N50E-GE3 39 Weeks 25
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    Vishay Siliconix SIHG20N50C-E3

    SIHG20N50C-E3 N-CHANNEL MOSFET TRANSISTOR, 20 A, 500 V, 3-PIN TO-247AC
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    RS SIHG20N50C-E3 Bulk 500
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    • 1000 $3.00
    • 10000 $2.76
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    Vishay Intertechnologies SIHG20N50CE3

    POWER MOSFET Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
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    ComSIT USA SIHG20N50CE3 275
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    Vishay Siliconix SIHG20N50C

    POWER MOSFET Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
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    ComSIT USA SIHG20N50C 100
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    Vishay Intertechnologies SIHG20N50C-E3

    Stock
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    Flip Electronics SIHG20N50C-E3 2,500
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    HG20N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HG20N60B3

    Abstract: hG20N60 hg20n60b3 equivalent
    Contextual Info: HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state


    Original     		hgtg20n60b3150ochg20n60b3hg20n60+1hg20n60b3 equivalent PDF

    HG20N60B3

    Abstract: Series 475 Rev-B3 hG20N60 hg20n60b3 equivalent 475 Rev-B3 HGTG20N60B3 LD26 RHRP3060 TB334 hg20n
    Contextual Info: HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state


    Original     		hgtg20n60b3150octb334lopmenthg20n60b3+8series 475 rev-b3hg20n60hg20n60b3 equivalent475 rev-b3ld26rhrp3060tb334hg20n PDF

    HG20N60B3

    Abstract: hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 hg*20n60 g20n60 vqe 24 d HGTG20N60B3 G20N60B
    Contextual Info: interrii HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 J a n u a ry . m Data Sheet 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs


    OCR Scan     		hgt1s20n60b3shgtp20n60b3hgtg20n60b3hg20n60b3+8hg20n60hg20n60b3 equivalenthg20n60bg20n60b3hg*20n60g20n60vqe 24 dg20n60b PDF

    HG20N60B3

    Abstract: hG20N60 HG20N60B hg20n60b3 equivalent TA49050 HGTG20N60B3 LD26 RHRP3060 TB334 hg20n
    Contextual Info: HGTG20N60B3 Data Sheet August 2003 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state


    Original     		hgtg20n60b3150octb334hg20n60b3+7hg20n60hg20n60bhg20n60b3 equivalentta49050ld26rhrp3060hg20n PDF

    HG20N60B3

    Abstract: hG20N60 G20N60B3 hg20n60b3 equivalent HG20N60B
    Contextual Info: HGTP20N60B3, HGTG20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBTs November 1997 Features Description • 40A, 600V at TC = 25oC The HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a


    Original     		hgtp20n60b3hgtg20n60b3150octa49050+61-800-4-harrishg20n60b3hg20n60g20n60b3hg20n60b3 equivalenthg20n60b PDF

    HG20N60B3

    Abstract: G20N60B3 hG20N60 HGT1S20N60B3S9A hg20n60b3 equivalent g20n60 HGTG20N60B3 MOSFET 40A 600V HGT1S20N60B3S HGTP20N60B3
    Contextual Info: HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBTs Features The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs


    Original     		hgt1s20n60b3shgtp20n60b3hgtg20n60b3150oc+7hg20n60b3g20n60b3hg20n60hgt1s20n60b3s9ahg20n60b3 equivalentg20n60mosfet 40a 600v PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-intersilms-012aamo-153aarf1k49090+16rf1k49093rf1k49092itf87056dqtitf87072dk8titf87008dqtrf1k4922365e9 transistortransistor 75307dtransistor 65e8sd mosfet drive datasheet 4468 8 ping40n60rhr15120 equivalent10n120bnd76107dtransistor 76121demerson three phase dc motor driver service note PDF

    HGTG20N60B3

    Abstract: HG20N60B3 hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 G20N60B g20n60 hg*20n60 hg20n
    Contextual Info: HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Data Sheet January 2000 40A, 600V, UFS Series N-Channel IGBTs Features The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs


    Original     		hgt1s20n60b3shgtp20n60b3hgtg20n60b3150oc+9hg20n60b3hg20n60hg20n60b3 equivalenthg20n60bg20n60b3g20n60bg20n60hg*20n60hg20n PDF

    HG20N60B3

    Abstract: hG20N60 hg20n60b3 equivalent g20n60b3 HG20N hg*20n60 TA49050 g20n60 MOSFET 40A 600V HGTG20N60B3
    Contextual Info: HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Data Sheet January 2000 File Number 3723.6 40A, 600V, UFS Series N-Channel IGBTs Features The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs


    Original     		hgt1s20n60b3shgtp20n60b3hgtg20n60b3150oc+9hg20n60b3hg20n60hg20n60b3 equivalentg20n60b3hg20nhg*20n60ta49050g20n60mosfet 40a 600v PDF