160W Search Results

T 100N k100

Abstract: VP-25-K capacitor+100N+k100
Contextual Info: Series V P & UK Material Specifications Coating Vitreous enamel Core Tubular ceramic Terminals Tinned, lug terminals, solderable to MIL-R-26 standards Weight VP25K VP50K V K100N V K 160W VK200W 25 watt 50 watt .816 oz. 1.312 oz. 100 watt 160 watt 200 watt

CN901

Abstract: EN50601
Contextual Info: m RPS-160 160W Single Output Medical Type series I Features : Universal AC input / Full range Built-in active PFC function Protections: Short circuit / Overload / Over voltage / Over temperature 5"x3" compact size Standby 5V@1 A function Optional Free air convection for 120W and 160W with 20.5 CFM forced air

WDH10T

Contextual Info: Weller High Power Digital Soldering Station, 160W, 120 V With WP120 Pencil Product Details Catalog No. WD1000HPT UPC Code 037103229656 Wattage 100 W Soldering WP100 Pencil s Temperature 150° F to 850° F Range Voltage 120 V/24 V Input/Output Supplied XTB (0054470499)

Contextual Info: 45 375Vin / 2Vout / 160Watts DC-DC Converter Module Model Number V375A2C160A* Features • • • • • • • • • • • DC input range: 250 - 425V Input surge withstand: 500V for 100ms DC output: 2V Programmable output: 10 to 110% Regulation: ±0.2% no load to full load

Contextual Info: 45 300Vin / 2Vout / 160Watts DC-DC Converter Module Features • • • • • • • • • • • DC input range: 180 - 375V Input surge withstand: 400V for 100ms DC output: 2V Programmable output: 10 to 110% Regulation: ±0.2% no load to full load

Contextual Info: 45 300Vin / 2Vout / 160Watts DC-DC Converter Module Model Number V300A2C160A* Features • • • • • • • • • • • DC input range: 180 - 375V Input surge withstand: 400V for 100ms DC output: 2V Programmable output: 10 to 110% Regulation: ±0.2% no load to full load

GRH111

Abstract: GRH111-0 GRH111-27 MGFS52BN2122A GRH111-1
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> SVIOFS52BM2122Â 2.1 - 2.2 GHz BAND 160W GaAs FET D E S C R IP TIO N The MGFS52BN2122A is a 160W push-pull type GaAs Power FET especially designed for use in 2.1 - 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees

40NF20

Abstract: STMicroelectronics 40nf20 mosfet 40a 200v STP40NF20 st 393 STB40NF20 STF40NF20 STW40NF20
Contextual Info: STP40NF20 - STF40NF20 STB40NF20 - STW40NF20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET Features Type VDSS RDS on ID PW STB40NF20 200V <0.045Ω 40A 160W STP40NF20 200V <0.045Ω 40A 160W STF40NF20

24v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM

Abstract: indigo canada circuit diagram indigo bash STA5150 bash indigo audio amplifier circuit diagram 200w mono bash indigo FLEXIWATT27 STABP01 bash audio amplifier circuit diagram
Contextual Info: STA5150 200W MONO • ■ ■ ■ ■ ■ ■ ■ ■ ■ POWER AMPLIFIER MONOCHIP BRIDGE MONO AMPLIFIER FOR BASH ARCHITECTURE 160W OUTPUT POWER @ R L = 4 Ω, THD = 0.5% 200W OUTPUT POWER @ R L = 4 Ω, THD = 10% HIGH DYNAMIC PREAMPLIFIER INPUT STAGES

RFB3004

Contextual Info: RFB300/350 Series 24Vin and 48Vin single output DC/DC CONVERTERS • • • • • • • 308W and 350W Half brick 1 NEW Product High efficiency topology Wide temperature range, -40°C to +100°C @ full power High power density 160W/in3 in 0.4” tall version

ES079

Contextual Info: E-Series l/Q Modulator 1 4 7 -1 7 5 MHz EQKR8-160W R-1 Features • High carrier suppression • High 31 and 51 suppression • Wide band T 0 310 MAX * -''. 8 8 0 030 ± 0 00b (0 76 ± 13) D IA . 8 P L A C E S Specifications @ 25 C Frequency Range (LO) Carrier

Contextual Info: 160W Single Output with Battery Charger UPS Function PSC-160 series Bauar t gepruft Sicherheit egel ma ge od o s be wac g www.tuv.com ID 2000000000 • Features •Universal AC input / Full range •Built-in active PFC function •6"x3" compact PCB size •Models with L-Bracket and cover available

40NF20

Abstract: STMicroelectronics 40nf20 STP40NF20 STB40NF20 S1217 STW40NF20 STF40NF20
Contextual Info: STP40NF20 - STF40NF20 STB40NF20 - STW40NF20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW STB40NF20 200V <0.045Ω 40A 160W STP40NF20 200V <0.045Ω 40A 160W STF40NF20

DIODE UF marking code

Abstract: smd diode marking Av smd marking code cp SMD diode color code smd diode UF smd marking code sa smd diode code CP DIODE SMD 55 ah smd smd marking CA
Contextual Info: Two Terminals SMD Switching Diode TWD4148-160WT Two Terminals SMD Switching Diode Features • • • • Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance RoHS Compliant SOD-523 Mechanical Data Case: SOD-523, Plastic Case Terminals:

MTTF

Abstract: 60Ghz GaN amplifier 160W JESD22-A114 EGN26C160I2D
Contextual Info: EGN26C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 52.5dBm typ. @ Psat ・High Efficiency: 65%(typ.) @ Psat ・Power Gain : 16dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

2.2GHz

Abstract: EGN21C160I2D GaN amplifier
Contextual Info: EGN21C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 52.5dBm typ. @ Psat ・High Efficiency: 68%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: EA-PSI 5000 160W - 640W PROGRAMMIERBARE DC-LABORNETZGERÄTE / PROGRAMMABLE LABORATORY DC POWER SUPPLIES EA-PSI 5200-10 hh hh hh hh hh hh hh hh hh hh hh hh hh hh hh hh hh 56 Weiteingangsbereich 90.264V mit aktiver PFC Hoher Wirkungsgrad bis 92% Ausgangsleistungen: 0.160W bis 0.640W

Contextual Info: BLP15M7160P Power LDMOS transistor Rev. 1 — 10 January 2014 Objective data sheet 1. Product profile 1.1 General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The

C 828 Transistor

Abstract: PH2856-160 iC 828 Transistor 12US
Contextual Info: PH2856-160 Radar Pulsed Power Transistor 160W, 2.856 GHz, 12µs Pulse, 10% Duty M/A-COM Products Released, 10 Aug 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

Contextual Info: Maintenance-Free Rechargeable Sealed Lead-Acid Battery HR40-12 160W/Cell 15Min Rate For High Rate Discharge The battery is constructed by plates, separators, safety valves and container. Since the electrolyte is held by a glass-mat separator and plates ,the

ARR34C160

Contextual Info: 160W CW Laser Diode Array Part Number: ARR34C160 EIGHT-SHOOTER TM • Packaged Laser Diode Array · Available With Any Silver BulletTM Configuration · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS PARAMETER CW Power Output Operating Current Threshold Current

GADIWA-3160

Contextual Info: GADIWA-3161 128W DC/DC 9V~29V/wide-input, ATX/output, Board Type Converter GADIWA- 3161 is a wide input board type converter. It normally support 128Watts and maximum can reach to 160Watts. GADIWA-3160 can save more space and cost, it’s not only capability for fan-less system but also

CN901

Abstract: EN60601-1 IEC60601-1 transistor jst 7 transistor jst
Contextual Info: RPS-160 160W Single Output Medical Type series Features : Universal AC input / Full range Built-in active PFC function Protections: Short circuit / Overload / Over voltage / Over temperature 5"x3" compact size Free air convection for 110W and 160W with 20.5 CFM forced air

EN555022

Contextual Info: DC/DC Converters TEP 160WIR Series, 144 – 182 Watt Features ◆ Compact metal package ◆ Ultra wide 4:1 input voltage ranges 8.5–36, 16.5–75, 43–160 VDC ◆ EN 50155 approval for railway applications ◆ Very high efficiency up to 91% ◆ No minimum load