GR708 Search Results

CM32

Abstract: MGFL48V1920 GR-70
Contextual Info: Preliminary MITSUBISHI SEMICONDUCTOR «^QaAs FET> MGFL48V1920 1.9 - 2.0GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFL48V1920 is a 60W push-pull type GaAs Power FET especially designed for use in 1.9 - 2.0GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

GRH111

Abstract: GRH111-0 GRH111-27 MGFS52BN2122A GRH111-1
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> SVIOFS52BM2122Â 2.1 - 2.2 GHz BAND 160W GaAs FET D E S C R IP TIO N The MGFS52BN2122A is a 160W push-pull type GaAs Power FET especially designed for use in 2.1 - 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees

MGFC47B3538B

Abstract: MGFC47B
Contextual Info: <C band Internally Matched Power GaAs FET> MGFC47B3538B 3.5 – 3.8GHz BAND / 50W DESCRIPTION The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.5 – 3.8 GHz band amplifiers. The hermetically sealed metal-ceramic package

2155G

Abstract: 8 ohm 1w grm40 CR10 GRM111 MGFS48BK2122A C7-GRM111 1w, GaAs FET
Contextual Info: MITSUBISHI SEM ICONDUCTOR <GaAs FET> MGFS48BK2122A 2.1 - 2.2 GHz BAND 60W GaAs FET D E S C R IP T IO N The MGFS48BK2122A is a 60W partial-match type GaAs Power FET especially designed for use in 2.1 - 2.2GHz band amplifiers. OUTLINE DRAWING Unit : millimeters

MGFL48V1920

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL48V1920 1.9 - 2.0GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFL48V1920 is a 60W push-pull type GaAs Power FET especially designed for use in 1.9 - 2.0GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS48V2527 2.5 - 2.7GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFS48V2527 is a 60W push-pull type GaAs Power FET especially designed for use in 2.5 - 2.7GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MGFS48V2527

Abstract: 1348 c23 s 1348 c23
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS48V2527 2.5 - 2.7GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFS48V2527 is a 60W push-pull type GaAs Power FET especially designed for use in 2.5 - 2.7GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

8002 1011 amplifier

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL48V1920 1.9 - 2.0GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFL48V1920 is a 60W push-pull type GaAs Power FET especially designed for use in 1.9 - 2.0GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

CR10

Abstract: MGFC47B3436B GaAs FET 15A
Contextual Info: PRELIMINARY MITSUBISHI SEMICONDUCTOR <GaAs FET> Notice: This is not a final specification. Some parametric limits are subject to change. MGFC47B3436B 3.4 - 3.6GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC47B3436B is an internally impedance-matched

MGFS48V2527

Abstract: GF-47
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS48V2527 2.5 - 2.7GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFS48V2527 is a 60W push-pull type GaAs Power FET especially designed for use in 2.5 - 2.7GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

GR111

Abstract: MGFS48V2527 60W POWER AMPLIFIER CIRCUIT
Contextual Info: M ITS U BIS H I S E M IC O N D U C TO R <G aA s FET> Preliminary MGFS48V2527 2.5 - 2.7GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFS48V2527 is a 60W push-pull type GaAs Power FET especially designed for use in 2.5 - 2.7GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

Contextual Info: <C band Internally Matched Power GaAs FET> MGFC47B3538B 3.5 – 3.8GHz BAND / 50W DESCRIPTION The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.5 – 3.8 GHz band amplifiers. The hermetically sealed metal-ceramic package