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    MGFL48V1920 Search Results

    MGFL48V1920 Datasheets (1)

    Mitsubishi
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MGFL48V1920
    Mitsubishi 1.9-2.0 GHz BAND 60W GaAs FET Scan PDF 294.57KB 5

    MGFL48V1920 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CM32

    Abstract: MGFL48V1920 GR-70
    Contextual Info: Preliminary MITSUBISHI SEMICONDUCTOR «^QaAs FET> MGFL48V1920 1.9 - 2.0GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFL48V1920 is a 60W push-pull type GaAs Power FET especially designed for use in 1.9 - 2.0GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.


    OCR Scan
    mgfl48v192025deggat-98cm32+1gr-70 PDF

    Contextual Info: < L/S band internally matched power GaAs FET > MGFL48V1920 1.9 – 2.0 GHz BAND / 60W DESCRIPTION The MGFL48V1920 is a 60W push-pull type GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees


    Original
    mgfl48v192020ohm PDF

    MGFL48V1920

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL48V1920 1.9 - 2.0GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFL48V1920 is a 60W push-pull type GaAs Power FET especially designed for use in 1.9 - 2.0GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.


    Original
    mgfl48v1920 PDF

    s band

    Contextual Info: < L/S band internally matched power GaAs FET > MGFL48V1920 1.9 – 2.0 GHz BAND / 60W DESCRIPTION The MGFL48V1920 is a 60W push-pull type GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees


    Original
    mgfl48v192020ohms band PDF

    8002 1011 amplifier

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL48V1920 1.9 - 2.0GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFL48V1920 is a 60W push-pull type GaAs Power FET especially designed for use in 1.9 - 2.0GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.


    Original
    mgfl48v1920gate228002 1011 amplifier PDF

    MGFL48V1920

    Abstract: 12v 20A WITH FET
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL48V1920 1.9 - 2.0GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFL48V1920 is a 60W push-pull type GaAs Power FET especially designed for use in 1.9 - 2.0GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.


    Original
    mgfl48v192012v 20a with fet PDF

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original
    m6sta-005va/wa/samf-156sta-006va/wa/samf-156sra-002va/wa/samf-622sta-004va/wa/sa+16mf-622sta-005va/wa/samf-622sta-006va/wa/samf-622sra-002va/wa/samf-2500sta-002va/wa003va/wa004va/wac42v5964mgf1302 transistormgf1601mgfc1402m57721m67760lch2 marking sot-89 mmic2sc5125mitsubishi m57710-am68776 PDF