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    H11S Search Results

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    TE Connectivity VF445H11S05/X830

    Automotive Relay - SPDT - 24 VDC Coil - 120(NO)/45(NC)A - Quick Connect Coil Termination - Plug In Mounting.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics VF445H11S05/X830 1,766
    • 1 -
    • 10 $20.93
    • 100 $18.24
    • 1000 $17.22
    • 10000 $17.22
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    TTI VF445H11S05/X830 Each 2,100
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $15.18
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    TME VF445H11S05/X830 300 8
    • 1 -
    • 10 $12.08
    • 100 $10.24
    • 1000 $8.90
    • 10000 $8.90
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    OMRON Industrial Automation K8AKTH11S24VACDC

    Electromechanical Relay 24VDC 24VAC 3A SPDT (100x22.5x90)mm DIN Rail Monitoring Relay
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics K8AKTH11S24VACDC 4
    • 1 $234.00
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    Newark K8AKTH11S24VACDC Bulk 121 1
    • 1 $294.73
    • 10 $268.64
    • 100 $268.64
    • 1000 $268.64
    • 10000 $268.64
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    OMRON Industrial Automation K8AKTH11S100240VAC

    Electromechanical Relay 240VAC 5A SPDT (( 22.5mm 100mm 90mm)) DIN Rail Monitoring Relay
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics K8AKTH11S100240VAC 3
    • 1 $234.00
    • 10 $234.00
    • 100 $234.00
    • 1000 $234.00
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    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics ZNTH11S
    • 1 $749.00
    • 10 $749.00
    • 100 $749.00
    • 1000 $749.00
    • 10000 $749.00
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    TE Connectivity VF4-11H11-S08

    Relay - 40A - 1 Form A - AgNi0.15 Contact Material - Dust Cover - 24VDC 360Ohms Coil - 2.7k Ohm Resistor In Parallel With Coil - Quick Connect Terminals.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics VF4-11H11-S08
    • 1 -
    • 10 $25.42
    • 100 $20.18
    • 1000 $20.18
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    H11S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    f953

    Abstract: H11S RA05H9595M RA05H9595M-101
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.


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    ra05h9595m952-954mhz954-mhzf953+2h11sra05h9595m-101 PDF

    H11S

    Abstract: RA05H9595M RA05H9595M-101
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.


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    ra05h9595m952-954mhz954-mhzh11s+1ra05h9595m-101 PDF

    Contextual Info: RoHS compliant 3.0mm .l 18" Pitch Micro Fit Dual Row Housing c W u s El 82481 Features: A A * * * * Availoble in 2 through 24 Circuits Material: Nyion66 UU94V-0 Accepts YY-575Q -T Crimp terminal Mates with YY-5950-W XXS or YY-59S0-W XXR series wafer or YY-5850-H XX series housing


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    nyion66uu94v-0yy-575qyy-5950-w+3yy-59s0-wyy-5850-hyy-5750-h PDF

    MARKING CODE 13w

    Abstract: 13W MARKING
    Contextual Info: < Silicon RF Power Modules > RA13H8891MB RoHS Compliance, 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to 915-MHz range. The battery can be connected directly to the drain of the


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    ra13h8891mb880-915mhz13-watt915-mhz+3oct2011marking code 13w13w marking PDF

    shinetsu G746 rohs

    Abstract: shinetsu G746 G746 rohs G746 shinetsu G746 H11S H46S AN-GEN-042-B shinetsu Dented
    Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-042-B for RoHS compliance products Date : 14th Dec. 2007 Prepared : Y.Tanaka Confirmed : T.Okawa SUBJECT: RECOMMENDATION of THERMAL COMPOUND APPLYING METHOD for RA series RoHS COMPLIANCE PRODUCTS


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    an-gen-042-bshinetsu g746 rohsshinetsu g746g746 rohs+6g746 shinetsug746h11sh46sshinetsudented PDF

    AN32181B

    Abstract: K11S LED10B
    Contextual Info: Doc No. TA4-EA-06053 Revision. 3 Product Standards AN32181B http://www.semicon.panasonic.co.jp/en/ 12 x 12 Dots Matrix LED Driver LSI FEATURES DESCRIPTION • 12  12 LED Matrix Driver AN32181B is a 144 Dots Matrix LED Driver. It can drive up to 48 RGB LEDs.


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    ta4-ea-06053an32181bk11sled10b PDF

    H11S

    Abstract: RA06H8285M RA06H8285M-01
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA06H8285M 820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA06H8285MB is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to


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    ra06h8285m820-851mhzra06h8285mb851-mhz+2h11sra06h8285m-01 PDF

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


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    m6sta-005va/wa/samf-156sta-006va/wa/samf-156sra-002va/wa/samf-622sta-004va/wa/sa+16mf-622sta-005va/wa/samf-622sta-006va/wa/samf-622sra-002va/wa/samf-2500sta-002va/wa003va/wa004va/wac42v5964mgf1302 transistormgf1601mgfc1402m57721m67760lch2 marking sot-89 mmic2sc5125mitsubishi m57710-am68776 PDF

    transistor marking code H11S

    Abstract: MOSFET Power Amplifier Module 900Mhz RF MOSFET MODULE H11S RA13H8891MB-101
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB RoHS Compliance , 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to


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    ra13h8891mb880-915mhz13-watt915-mhz+5transistor marking code h11smosfet power amplifier module 900mhzrf mosfet moduleh11sra13h8891mb-101 PDF

    H11S

    Abstract: RA05H8693M RA05H8693M-101
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H8693M RoHS Compliance,866-928MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H8693M is a 5watt RF MOSFET Amplifier Module that operate in the 866 to 928MHz range.


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    ra05h8693m866-928mhz928mhzh11s+1ra05h8693m-101 PDF

    shinetsu G746

    Abstract: shinetsu G746 rohs G746 shinetsu G746 H11S G746 rohs
    Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-GEN-042-D Date : 14th Dec. 2007 Rev. date : 22th Jun. 2010 Rev.date : 7th Jan. 2010 Prepared : Y.Tanaka Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RECOMMENDATION of THERMAL COMPOUND APPLYING


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    an-gen-042-dshinetsu g746shinetsu g746 rohsg746 shinetsu+3g746h11sg746 rohs PDF

    Contextual Info: < Silicon RF Power Modules > RA06H8285M RoHS Compliance, 820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA06H8285M is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to 851-MHz range. The battery can be connected directly to the drain of the


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    ra06h8285m820-851mhz851-mhz PDF

    of IC 74191

    Abstract: ci 74191
    Contextual Info: S 13A 31 I 3 3 Z IS _ v A3a 'N O ISSIW d Sd N 311IdM in O H U M 0 3 S n 39 IO N O inO H S ONV 0 3 1 V d 0 d d 0 0 N I X310IAJ 0 1 A d V 1 3 Id d 0 d d S I 1VH 1 NOIlVlAldOdNI S N IV 1 N 0 0 ONIMVHO SIH 1 ' JO I "ON 133H S 319VÌ 33S 5-161 n - a s _ “ON ONIMVdQ


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    311idmx310iajsn0isn31a1vid31v+8031vd0dd00nix310iaii/i0/66n0s33ni03ho31v0sof ic 74191ci 74191 PDF

    soc1044

    Abstract: SOC1044M H11Ax H11SBDXM_108R2 h11sbdxm H11LXM h11lxm5555r2 MOC3022 H11SADXM h11cx
    Contextual Info: Date Created: 4/21/2004 Date Issued: 4/30/2004 PCN # 20033602-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


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    0033602-amocd213r2vmmocd217r1mmocd217r2vm+16mocd223r1mmocd223r2vmof4822300wsl5500300wsl5500ssl5501soc1044soc1044mh11axh11sbdxm_108r2h11sbdxmh11lxmh11lxm5555r2moc3022h11sadxmh11cx PDF

    transistor marking code H11S

    Abstract: H11S RA06H8285M
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA06H8285M RoHS Compliance ,820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA06H8285M is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to 851-MHz


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    ra06h8285m820-851mhz851-mhztransistor marking code h11s+1h11s PDF

    RD100HHF1

    Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1
    Contextual Info: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V


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    30-900mhzh-cr624-eki-0612rd100hhf1+9rd70hvf1rd16hhf1rd15hvf1rd06hvf1rd16hhf1 application notesrd70hvfrd70hhf1rd01mus2rd06hhf1 PDF

    H102D1

    Abstract: H111D1 H102D1 equivalent H117D1 32481D H110D1 H157D1 H119D1 H103D1 H122DI
    Contextual Info: S G S -A T E S Sem iconductors Digital I. C . 's - H L L Integrated Circuits— High Level Logic H100 Series H L L is a family of high threshold logic designed specifically for application in areas where noise is a hazard. A com prehensive range of gates, flip-flops, counters, decoders and level converters make this


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    31191gh157d128919xh158d1+1328920ch11sdih1s6di/h157dih122dih124dih102d1h111d1h102d1 equivalenth117d132481dh110d1h119d1h103d1 PDF

    RA06H8285M-101

    Abstract: H11S marking CODE H11S
    Contextual Info: < Silicon RF Power Modules > RA06H8285M RoHS Compliance, 820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA06H8285M is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to 851-MHz range. The battery can be connected directly to the drain of the


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    ra06h8285m820-851mhz851-mhzoct2011+3ra06h8285m-101h11smarking code h11s PDF

    transistor marking code H11S

    Abstract: H11S marking CODE H11S rf transistor mar 8 RA05H9595M RA05H9595M-101 MOSFET Amplifier Module 150 mhz amplifier module 5w
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.


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    ra05h9595m952-954mhz954-mhztransistor marking code h11s+6h11smarking code h11srf transistor mar 8ra05h9595m-101mosfet amplifier module150 mhz amplifier module 5w PDF

    RM15TB-H

    Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A
    Contextual Info: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;


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    cm400hacm600hacm600hbcm100dy+15cm150dycm200dycm300dycm400dycm600dyrm15tb-hrm10tb-hra45h8087mrd00hhf1rm30tn-hrm10tbrm250hb-10fps11023-aps11023mitsubishi ps11023-a PDF

    H11S

    Abstract: RA13H8891MA RA13H8891MA-01 RA13H8891MA-E01
    Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MA 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to


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    ra13h8891ma889-915mhz13-watt915-mhz+3h11sra13h8891ma-01ra13h8891ma-e01 PDF

    MC0628R

    Abstract: mc0628 MC0628R replacement FAIRCHILD SEMICONDUCTOR Fairchild cross KA3846 FDD8896 "drop-in replacement" FQPF3N60C FQP50N06 equivalent FDS8884
    Contextual Info: Discontinued Product s 4296_ST42091 5092_F50188E 5FS1_NB5F009 73282 74ABT646CMSA 74ABT646CMSAX 74ABT646CMTC 74ABT646CSC 74AC251SJ 74AC299SJX 74AC74CW 74ACT151SJ 74ACT16646SSC 74ACTQ08SJX Replacement Product(s) NONE NONE FDS3580 None 74ABT646ADB 74ABT646ADB


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    st42091f50188enb5f00974abt646cmsa+1674abt646cmsax74abt646cmtc74abt646csc74ac251sj74ac299sjx74ac74cwmc0628rmc0628mc0628r replacementfairchild semiconductorfairchild crosska3846fdd8896 "drop-in replacementfqpf3n60cfqp50n06 equivalentfds8884 PDF

    megamax

    Abstract: DB15 CONNECTOR LTmp STAC compression modem EN50082-1 VT-100 RJ45 CONNECTOR jack lucent Lucent video "PPTP" rj45 jack ethernet
    Contextual Info: MegaMAX For the Multiband MAX 6000 MegaMAX is software for the Multiband MAX 6000 that delivers high-quality, high-speed connections for bandwidth-heavy applications such as video-on-demand. MegaMAX software provides the flexibility to merge up to four T1/E1/PRI circuits into a single 6 Mbps T1/PRI


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    mbx6000megamaxdb15 connectorltmp+7stac compression modemen50082-1vt-100rj45 connector jack lucentlucent videopptprj45 jack ethernet PDF

    RA13H8891MB-101

    Abstract: H11S MOSFET Power Amplifier Module 900Mhz
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB RoHS Compliance , 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to


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    ra13h8891mb880-915mhz13-watt915-mhz+3ra13h8891mb-101h11smosfet power amplifier module 900mhz PDF