f953
Abstract: H11S RA05H9595M RA05H9595M-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.
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H11S
Abstract: RA05H9595M RA05H9595M-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.
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Contextual Info: RoHS compliant 3.0mm .l 18" Pitch Micro Fit Dual Row Housing c W u s El 82481 Features: A A * * * * Availoble in 2 through 24 Circuits Material: Nyion66 UU94V-0 Accepts YY-575Q -T Crimp terminal Mates with YY-5950-W XXS or YY-59S0-W XXR series wafer or YY-5850-H XX series housing
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nyion66uu94v-0yy-575qyy-5950-w+3yy-59s0-wyy-5850-hyy-5750-h
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MARKING CODE 13w
Abstract: 13W MARKING
Contextual Info: < Silicon RF Power Modules > RA13H8891MB RoHS Compliance, 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to 915-MHz range. The battery can be connected directly to the drain of the
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ra13h8891mb880-915mhz13-watt915-mhz+3oct2011marking code 13w13w marking
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shinetsu G746 rohs
Abstract: shinetsu G746 G746 rohs G746 shinetsu G746 H11S H46S AN-GEN-042-B shinetsu Dented
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-042-B for RoHS compliance products Date : 14th Dec. 2007 Prepared : Y.Tanaka Confirmed : T.Okawa SUBJECT: RECOMMENDATION of THERMAL COMPOUND APPLYING METHOD for RA series RoHS COMPLIANCE PRODUCTS
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AN32181B
Abstract: K11S LED10B
Contextual Info: Doc No. TA4-EA-06053 Revision. 3 Product Standards AN32181B http://www.semicon.panasonic.co.jp/en/ 12 x 12 Dots Matrix LED Driver LSI FEATURES DESCRIPTION • 12 12 LED Matrix Driver AN32181B is a 144 Dots Matrix LED Driver. It can drive up to 48 RGB LEDs.
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H11S
Abstract: RA06H8285M RA06H8285M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA06H8285M 820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA06H8285MB is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to
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C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
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m6sta-005va/wa/samf-156sta-006va/wa/samf-156sra-002va/wa/samf-622sta-004va/wa/sa+16mf-622sta-005va/wa/samf-622sta-006va/wa/samf-622sra-002va/wa/samf-2500sta-002va/wa003va/wa004va/wac42v5964mgf1302 transistormgf1601mgfc1402m57721m67760lch2 marking sot-89 mmic2sc5125mitsubishi m57710-am68776
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transistor marking code H11S
Abstract: MOSFET Power Amplifier Module 900Mhz RF MOSFET MODULE H11S RA13H8891MB-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB RoHS Compliance , 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to
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H11S
Abstract: RA05H8693M RA05H8693M-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H8693M RoHS Compliance,866-928MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H8693M is a 5watt RF MOSFET Amplifier Module that operate in the 866 to 928MHz range.
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shinetsu G746
Abstract: shinetsu G746 rohs G746 shinetsu G746 H11S G746 rohs
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-GEN-042-D Date : 14th Dec. 2007 Rev. date : 22th Jun. 2010 Rev.date : 7th Jan. 2010 Prepared : Y.Tanaka Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RECOMMENDATION of THERMAL COMPOUND APPLYING
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Contextual Info: < Silicon RF Power Modules > RA06H8285M RoHS Compliance, 820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA06H8285M is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to 851-MHz range. The battery can be connected directly to the drain of the
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of IC 74191
Abstract: ci 74191
Contextual Info: S 13A 31 I 3 3 Z IS _ v A3a 'N O ISSIW d Sd N 311IdM in O H U M 0 3 S n 39 IO N O inO H S ONV 0 3 1 V d 0 d d 0 0 N I X310IAJ 0 1 A d V 1 3 Id d 0 d d S I 1VH 1 NOIlVlAldOdNI S N IV 1 N 0 0 ONIMVHO SIH 1 ' JO I "ON 133H S 319VÌ 33S 5-161 n - a s _ “ON ONIMVdQ
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soc1044
Abstract: SOC1044M H11Ax H11SBDXM_108R2 h11sbdxm H11LXM h11lxm5555r2 MOC3022 H11SADXM h11cx
Contextual Info: Date Created: 4/21/2004 Date Issued: 4/30/2004 PCN # 20033602-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.
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transistor marking code H11S
Abstract: H11S RA06H8285M
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA06H8285M RoHS Compliance ,820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA06H8285M is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to 851-MHz
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RD100HHF1
Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1
Contextual Info: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V
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H102D1
Abstract: H111D1 H102D1 equivalent H117D1 32481D H110D1 H157D1 H119D1 H103D1 H122DI
Contextual Info: S G S -A T E S Sem iconductors Digital I. C . 's - H L L Integrated Circuits— High Level Logic H100 Series H L L is a family of high threshold logic designed specifically for application in areas where noise is a hazard. A com prehensive range of gates, flip-flops, counters, decoders and level converters make this
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RA06H8285M-101
Abstract: H11S marking CODE H11S
Contextual Info: < Silicon RF Power Modules > RA06H8285M RoHS Compliance, 820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA06H8285M is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to 851-MHz range. The battery can be connected directly to the drain of the
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transistor marking code H11S
Abstract: H11S marking CODE H11S rf transistor mar 8 RA05H9595M RA05H9595M-101 MOSFET Amplifier Module 150 mhz amplifier module 5w
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range.
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RM15TB-H
Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A
Contextual Info: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;
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H11S
Abstract: RA13H8891MA RA13H8891MA-01 RA13H8891MA-E01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MA 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to
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MC0628R
Abstract: mc0628 MC0628R replacement FAIRCHILD SEMICONDUCTOR Fairchild cross KA3846 FDD8896 "drop-in replacement" FQPF3N60C FQP50N06 equivalent FDS8884
Contextual Info: Discontinued Product s 4296_ST42091 5092_F50188E 5FS1_NB5F009 73282 74ABT646CMSA 74ABT646CMSAX 74ABT646CMTC 74ABT646CSC 74AC251SJ 74AC299SJX 74AC74CW 74ACT151SJ 74ACT16646SSC 74ACTQ08SJX Replacement Product(s) NONE NONE FDS3580 None 74ABT646ADB 74ABT646ADB
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megamax
Abstract: DB15 CONNECTOR LTmp STAC compression modem EN50082-1 VT-100 RJ45 CONNECTOR jack lucent Lucent video "PPTP" rj45 jack ethernet
Contextual Info: MegaMAX For the Multiband MAX 6000 MegaMAX is software for the Multiband MAX 6000 that delivers high-quality, high-speed connections for bandwidth-heavy applications such as video-on-demand. MegaMAX software provides the flexibility to merge up to four T1/E1/PRI circuits into a single 6 Mbps T1/PRI
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RA13H8891MB-101
Abstract: H11S MOSFET Power Amplifier Module 900Mhz
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB RoHS Compliance , 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to
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