RA13H8891MB Search Results

MARKING CODE 13w

Abstract: 13W MARKING
Contextual Info: < Silicon RF Power Modules > RA13H8891MB RoHS Compliance, 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to 915-MHz range. The battery can be connected directly to the drain of the

transistor marking code H11S

Abstract: MOSFET Power Amplifier Module 900Mhz RF MOSFET MODULE H11S RA13H8891MB-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB RoHS Compliance , 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to

RA13H8891MB-101

Abstract: H11S MOSFET Power Amplifier Module 900Mhz
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB RoHS Compliance , 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to

MOSFET Power Amplifier Module 900Mhz

Abstract: H11S RF MOSFET MODULE RA13H8891MB-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB RoHS Compliance , 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to

Contextual Info: < Silicon RF Power Modules > RA13H8891MB RoHS Compliance, 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to 915-MHz range. The battery can be connected directly to the drain of the

H11S

Abstract: RA13H8891MB-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to

H11S

Abstract: RA13H8891MB-01 RA13H8891MB-E01 MOSFET Power Amplifier Module 900Mhz
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to

RA60H1317M1

Abstract: RA30H1317M RA35H1516M RA07H4047M RA03M8087M RA07H3340M RA07H4452M RA13H1317M RA13H3340M RA13H4047M
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-GEN-026-H Date : 18th Apr. 2003 Rev. date : 22th.Jun. 2010 Prepared : S.Kametani, Y.Tanaka Confirmed : T. Okawa Taking Charge of Silicon RF by Miyoshi Electronics SUBJECT: ELECTRO STATIC SENSITIVITY FOR

Power Semiconductors

Abstract: RF Power walkie talkie walkie talkie circuit reliability RA07M1317M RA45H4452M semiconductors walkie-talkie
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-GEN-030-E Date : 16th Jun. 2003 Rev. date : 22th.Jun. 2010 Prepared : T.Kajo,T.Okawa Confirmed : H.Nakao Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Reliability concept for Silicon RF Products

RD100HHF1

Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1
Contextual Info: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V

RA60H1317M1

Abstract: C100pF 4500 MOS RA13H3340M mitsubishi rf power module RA30H1317M RA07H4047M RA35H1516M RA07H3340M RA07H4452M
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-GEN-026-G Date : 18th Apr. 2003 Rev. date : 7th Jan. 2010 Prepared : S.Kametani, Y.Tanaka Confirmed : T. Okawa Taking Charge of Silicon RF by Miyoshi Electronics SUBJECT: ELECTRO STATIC SENSITIVITY FOR

RM15TB-H

Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A
Contextual Info: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;

walkie-talkie

Abstract: RF POWER RA07M1317M reliability Mitsubishi AA050MC01 RoHS 1000FIT RA45H4452M mitsubishi electric power semiconductors semiconductors
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-030-D Date : 16th Jun. 2003 Rev.date : 7th Jan. 2010 Prepared : T.Kajo,T.Okawa Confirmed : H.Nakao Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Reliability concept for Silicon RF Products

RA60H1317M1

Abstract: FET 4900 mitsubishi rf "RF Power Modules" 175mhz 12.5v 40w RA30H1317M RA13H1317M RA03M8087M RA30H4452M RA35H1516M
Contextual Info: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-026-E Date : 18th April 2003 Rev. date : 15th March ‘05 Prepared : K. Kajiwara Confirmed : T. Okawa SUBJECT: ELECTRO STATIC SENSITIVITY FOR MITSUBISHI RF POWER MODULE RA* series