RD12MVP1 Search Results

RD12MVP1

Abstract: RD12MVS1 2040D
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-VHF-034-B Date : 10th Feb. 2006 Rev. date : 22 th Jun. 2010 Prepared: E.Akiyama S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD12MVP1 single-amplifier RF characteristics data at f=135-175MHz,Vdd=7.2V

DIODE GP 704

Abstract: RD12MVP1 micro strip line
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a 7.0+/-0.2 0.2+/-0.05 0.65+/-0.2 RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power

RD12MVP1

Abstract: RD12MVS1 mitsubishi 5218 5253 1007
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-VHF-034-A Date : 10th Feb. 2006 Rev.date : 7th Jan. 2010 Prepared: E.Akiyama S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD12MVP1 135-175MHz RF characteristics data

transistor D 1666

Abstract: transistor 801 diagrams
Contextual Info: < Silicon RF Power MOS FET Discrete > RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W (a) OUTLINE DRAWING RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. (b) 7.0+/-0.2 0.2+/-0.05

RD12MVP1

Abstract: top marking mitsubishi rd series
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a 7.0+/-0.2 0.2+/-0.05 0.65+/-0.2 RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power

DIODE GP 704

Abstract: GP 724 DIODE
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a 7.0+/-0.2 0.2+/-0.05 0.65+/-0.2 RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power

RD12MVP1

Abstract: RD12MVS1
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-VHF-034 Date: 10th Feb. 2006 Prepared: E.Akiyama S.Kametani Confirmed: SUBJECT: T.Ohkawa RD12MVP1 135-175MHz RF characteristics data SUMMARY: This application note shows the RF characteristics Frequency Characteristics, Pin vs. Pout

Contextual Info: < Silicon RF Power MOS FET Discrete > RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W (a) OUTLINE DRAWING RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. (b) (b) 7.0+/-0.2 0.2+/-0.05

DIODE GP 704

Abstract: transistor mosfet 536 RD12MVP1 VGS-75 0452 mosfet
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a (b) RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

RD100HHF1

Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1
Contextual Info: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V