MTTF Search Results

FP11G

Abstract: FP1189-G
Contextual Info: FP1189 ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years The FP1189 is a high performance ½-Watt HFET

Contextual Info: FH1 High Dynamic Range FET Product Features • • • • • • • 50 – 4000 MHz Low Noise Figure 18 dB Gain +42 dBm OIP3 +21 dBm P1dB Single or Dual Supply Operation Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF > 100 years Applications •

NME2405SC

Abstract: NME2412SC NME4815SC nme2415d nme2415dc nme2405dc NME4805SC mer1s NME2412DC
Contextual Info: NME 24V & 48V Series www.murata-ps.com Isolated 1W Single Output DC/DC Converters Isolation Capacitance MTTF1 „ Single Isolated Output Efficiency „ RoHS Compliant Output Voltage FEATURES NME2405DC NME2409DC NME2412DC NME2415DC NME2405SC NME2409SC NME2412SC

rt6010

Abstract: 2200uf, 63v electrolytic capacitor j453 transistor x 313 63v 2200uF 200B MDS140L 25-mils J345 1030 PULSED 32uS MODE-S
Contextual Info: MDS140L 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz GENERAL DESCRIPTION The MDS140L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The

88-108 mhz w power

Abstract: 88-108 an power 88-108 mhz 55ht fm emitter 88-108 mhz Power w 88-108mhz fm transistor
Contextual Info: FM 150 150 Watts, 28 Volts Broadcast 88 - 108 MHz GENERAL DESCRIPTION The FM 150 is a high power COMMON EMITTER bipolar transistor. It is designed for FM systems in the frequency band 88-108 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF.

TAN15

Contextual Info: TAN15 15 Watts, 40 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The TAN15 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor

1035 transistor

Abstract: M.P transistor
Contextual Info: 1035 MP 35 Watt, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1035 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes

Contextual Info: Toshiba Matsushita Display Technology Co., Ltd 10.4TYPE COLOR TFT-LCD MODULE LTA104D182F p-Si TFT All information is subject to change without notice. Please read bottom notes. RoHS compatible FEATURES : (1) 10.4 SVGA color display with High Luminance (2) Built in Long Life Lamps(MTTF:50,000 h)

700 v power transistor

Contextual Info: TPR 700 700 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 700 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The

AH2G

Abstract: marking code AH2G AH2-G TriQuint SOT-89 TAPE AND REEL
Contextual Info: AH2 High Dynamic Range Amplifier Product Features 50 – 1000 MHz +40 dBm OIP3 -71dBc CTB -48dBc CSO 3.5 dB Noise Figure 14.5 dB Gain +20 dBm P1dB Lead-free/Green/RoHS-compliant SOT-89 Package • Single +5 V Supply • MTTF > 100 years • • • • •

M112

Abstract: MS2473
Contextual Info: MS2473 600 Watts, 50 Volts, Pulsed Avionics 1090 MHz GENERAL DESCRIPTION The MS2473 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the 1090MHz frequency band. The device has gold thin-film metallization for proven highest MTTF. Low thermal resistance

LTD121C3

Abstract: LTA121C32SF LTD121C30S 278.3
Contextual Info: Toshiba Mobile Display Co., Ltd 12.1 TYPE COLOR TFT-LCD MODULE LTA121C32SF p-Si TFT All information is subject to change without notice. Please read bottom notes. RoHS compatible FEATURES : (1) 12.1 SVGA color display with High Luminance (2) Built in Long Life Lamps(MTTF:60,000h)

Contextual Info: INFRARED PULSED LASER DIODE L6690-53 PRELIMINARY DATA FEATURES High speed rise time tr 2 ns typ. Output Power : 10 W (at DR=0.05 %) MTTF 20000hrs Compact APPLICATIONS Laser rader Range finder Optical trigger Security barrier Figure 1: Dimensional Outline (Unit: mm)

Contextual Info: INFRARED PULSED LASER DIODE L6690-53 PRELIMINARY DATA FEATURES High speed rise time tr 2 ns typ. Output Power : 10 W (at DR=0.05 %) MTTF 20000hrs Compact APPLICATIONS Laser rader Range finder Optical trigger Security barrier Figure 1: Dimensional Outline (Unit: mm)

Contextual Info: ASW235 5 ~ 6000 MHz MMIC Amplifier Features Description  19.5 dB Gain at 2 GHz  18 dBm P1dB at 2 GHz  30.5 dBm Output IP3 at 2 GHz  3.5 dB NF at 2 GHz  MTTF > 100 Years  Single Supply The ASW235, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide

c639

Contextual Info: ASX620 150 ~ 3000 MHz MMIC Amplifier Features Description  29.5 dB Gain at 900 MHz  33 dBm P1dB at 900 MHz  48 dBm Output IP3 at 900 MHz  MTTF > 100 Years  Two Power Supplies The ASX620, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide

Contextual Info: ASL52D6 High Gain, Low Noise Amplifier Description Features  21 dB Gain at 1950 MHz  34 dBm OIP3 at 1950 MHz  18 dBm P1dB at 1950 MHz  0.65 dB NF at 1950 MHz  S11 < -18 dB  MTTF > 100 Years  Single Supply ASL52D6 is an easy-to-use low noise, high gain,

LTM08C351

Abstract: DF19-2830SCFA DF19G-30S-1C TOSHIBA FL INVERTER ltm08c
Contextual Info: 21cm COLOR TFT-LCD MODULE 8.4 TYPE LTM08C351 (p-Si TFT) LIQUID CRYSTAL DISPLAY DIVISION PRODUCT INFORMATION FEATURES (1) 8.4” SVGA color display with High Brightness (350cd/m2). (2) Wide viewing angle. (3) Built in Long Life CCFLs (MTTF:50,000 h). ( Conditions / Ta:25℃, IFL:6mA(rms)(continuing lighting), fFL:40kHz )

NML0505S

Abstract: NML0509S NML0512S NML0515S NML1205S NML1209S NML1212S NML1215S 716S
Contextual Info: NML SERIES Isolated 2W Single Output DC-DC Converters SELECTION GUIDE Nominal Input Voltage Output Voltage Output Current Input Current at Rated Load MTTF1 Order Code V (V) (mA) (mA) (%) (pF) kHrs NML0505S 5 5 400 513 78 19 2327 NML0509S 5 9 222 492 81 27

tpr1000

Abstract: high frequency transistor
Contextual Info: TPR 1000 1000 Watts, 45 Volts, Pulsed Avionics 1090 MHz GENERAL DESCRIPTION The TPR 1000 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor

NME2405D

Abstract: NME2405S NME2409D NME2409S NME2412D NME2412S NME2415D NME2415S NME4805D NME4809D
Contextual Info: NME 24V & 48V SERIES Isolated 1W Single Output DC-DC Converters SELECTION GUIDE Nominal Input Voltage Output Voltage Output Current MTTF1 Order Code V (V) (mA) (%) (pF) kHrs NME2405D 24 5 200 70 40 201 NME2409D 24 9 111 75 59 185 NME2412D 24 12 83 80 78

Contextual Info: NTA SERIES Isolated 1W Dual Output SM DC-DC Converters SELECTION GUIDE Nominal Input Voltage Output Voltage Output Current V (V) (mA) (mA) (%) (pF) kHrs O rd e rC o d e5 Input Current at Rated Load Efficiency Isolation Capacitance MTTF1 NTA0505M 5 5 ±100

1075MP

Contextual Info: 1075MP 75 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55FW-1 The 1075MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for

Contextual Info: P410m 2.5-Inch SAS NAND Flash SSD Features P410m 2.5-Inch SAS NAND Flash SSD MTFDEAK100MAS-1S1AA, MTFDEAK200MAS-1S1AA, MTFDEAK400MAS-1S1AA Features • • • • • • • • • • • • • • Reliability – MTTF: 2 million device hours2 – Static and dynamic wear leveling