88-108 MHZ POWER W Search Results

88-108

Abstract: an power 88-108 mhz 88-108 mhz w power 88-108 mhz Power w
Contextual Info: FM 175 175 Watts, 28 Volts Broadcast 88 - 108 MHz GENERAL DESCRIPTION TheFM 175 is a high power COMMON EMITTER bipolar transistor. It is designed for pulsed systems in the frequency band 88-108 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest

88-108 mhz w power

Abstract: 88-108 an power 88-108 mhz 55ht fm emitter 88-108 mhz Power w 88-108mhz fm transistor
Contextual Info: FM 150 150 Watts, 28 Volts Broadcast 88 - 108 MHz GENERAL DESCRIPTION The FM 150 is a high power COMMON EMITTER bipolar transistor. It is designed for FM systems in the frequency band 88-108 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF.

NSBP-108

Abstract: an power 88-108 mhz
Contextual Info: Connectorized NSBP-108+ NSBP-108 Band Stop Filter 88 to 108 MHz Features Maximum Ratings Operating Temperature Storage Temperature RF Power Input -55 C to 100 C -55oC to 100oC 0.5W at 25oC o o • High FM Frequency Rejection • Good Return Loss, 20 dB Typ @ Pass Band

M97032

Abstract: M9703
Contextual Info: Coaxial NEW! Band Stop Filter NSBP-108 88 to 108 MHz Maximum Ratings Operating Temperature Storage Temperature RF Power Input Features • High FM Frequency Rejection • Good Return Loss, 20 dB Typ @ Pass Band -55 C to 100 C -55oC to 100oC 0.5W at 25oC o

MW314

Abstract: MW300
Contextual Info: MW314 VCOS FOR CUSTOM APPLICATIONS SPECIFICATIONS Frequency Range: 2132 MHz @ 0.5V 2225 MHz @ 3.0V Phase Noise: @10 kHz: ≤ -88 dBc/Hz @100 kHz: ≤ -108 dBc/Hz Tuning Sensitivity: ≥ 37.2 MHz/V Spurious Response 2nd Harmonics : ≥ -18 dBc Output Power:

blf574

Abstract: Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d
Contextual Info: AN10714 Using the BLF574 in the 88 MHz to 108 MHz FM band Rev. 01 — 26 January 2010 Application note Document information Info Content Keywords BLF574, 600 MHz performance, high voltage LDMOS, amplifier implementation, Class-B CW, FM band, pulsed power Abstract

TP9383

Contextual Info: , L/ nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. . TELEPHONE: 973 376-2922 TP9383 NPN RF POWER TRANSISTOR DESCRIPTION: TP9383 is a Common Emitter Device Designed for FM Broadcast Transmitter Applications in the 88 to 108 MHz Band. FEATURES INCLUDE:

4CX15000A

Abstract: 4cx15000 scans-048 DSAGER00031
Contextual Info: Svetlana 4CX15000A/8281 Radial Beam Power Tetrode lie Svetlana 4C X 15000A /8281 is designed for audio and radio frequency applications. It is particularly well-suited for use in VHF FM broadcast transmitters in the Band II 88 108 MHz frequency range. The Svetlana

FMB150

Abstract: an power 88-108 mhz ASI10588
Contextual Info: FMB150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB150 is a high power transistor designed for FM broadcast system in 88-108 MHz range. It has diffused ballasting resistor to improve MTBF and high VSWR capability. PACKAGE STYLE .500 4L FLG .112x45°

88-108 mhz Power amplifier w

Abstract: DSAGER00032 M/KT 9019
Contextual Info: YC130/9019 Radial Beam Power Tetrode he Svetlana YC13 0 /9 0 19 is designed for use in VHF FM transmitters in the Band II 88-108 MHz frequency range. The YC130/9019 is also an excellent choice for plate-modu­ lated Class C power amplifiers or in Class AB, audio frequency applications. The

ATC100B151J

Abstract: ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT
Contextual Info: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 0, 3/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.

mrf6vp2600h

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 2.1, 11/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.

"Voltage Controlled Oscillators"

Abstract: VL800 VL700 Voltage controlled oscillators Temex vlb VL1025 VL730 VL430 VL460 VL500
Contextual Info: VOLTAGE CONTROLLED OSCILLATORS Contents TIME &FREQUENCY VOLTAGE CONTROLLED OSCILLATORS Contents PAGE SURFACE MOUNT LOW COST 430 - 2500 MHZ 3-5 SURFACE MOUNT LOW COST LOW PHASE NOISE 3-7 3-4 Vol. 2 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex-components.com

NIPPON CAPACITORS

Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.

PSCQ-2-120

Contextual Info: 2 Way-90° Power Splitter/Combiner PSCQ-2-120 Typical Performance Curves Insertion Loss Isolation 2.0 20.0 Insertion Loss S-1 20.5 Insertion Loss S-2 2.4 21.0 Insertion Loss Average 2.6 Isolation dB Insertion Loss (dB) 2.2 2.8 3.0 3.2 21.5 22.0 22.5 23.0

inductor vk200

Abstract: 10A ferrite bead 25 ohm semirigid ZENER MARKING C8 ST vk200 ferrite bead ceramic capacitor 4.7 mf 50v variable resistor 4.7 k ohms VK200 FERRITE diode L2.70 MARKING code mf stmicroelectronics
Contextual Info: SD2932 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metallized N-channel MOS

ZENER MARKING C8 ST

Abstract: CAPACITOR 64 680 4J diode t25 4 L5 SD2932 neosid RG316-25 vk200 ferrite bead SD2932W diode marking 100b
Contextual Info: SD2932 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metalized N-channel MOS

choke vk200

Abstract: VK200 rfc vk200 rfc with 6 turns STMicroelectronics marking code date SD1460 marking code stmicroelectronics vk200 rf choke VK200-19/4B STMicroelectronics marking code Date Code Marking STMicroelectronics
Contextual Info: SD1460 RF POWER BIPOLAR TRANSISTORS FM BROADCAST APPLICATIONS FEATURES SUMMARY • 108 MHz Figure 1. Package ■ 28 VOLTS ■ EFFICIENCY 75% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 150 W MIN. WITH 9.2 dB GAIN DESCRIPTION The SD1460 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for VHF FM

RG316-25

Abstract: 25 ohm semirigid diode t25 4 L5 850 ohm potentiometer RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz vk200 ferrite bead 220 k ohm potentiometer VK200 INDUCTOR vk200.10 diode gp 434
Contextual Info: SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH PULL • POUT = 300 W MIN. WITH 15 dB GAIN @ 175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS

diode Zener t25 4 c5

Abstract: diode gp 434 RG316-25 diode t25 4 L5 diode t25 4 c5 SD2932 200B 700B ST40 neosid
Contextual Info: SD2932 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH PULL • POUT = 300 W MIN. WITH 15 dB GAIN @ 175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS

V560MC03

Abstract: SMV2165A-LF LF 936 CLV0391A-LF CLV0436A-LF CLV0600A-LF CLV0625E-LF CLV0700E-LF CLV0730A-LF CLV0798A-LF
Contextual Info: ISO 9001:2008 Certified The World Leader in VCOs & PLLs 2010 Product Selection Guide CLV Series VCOs FEATURES • Wide Frequency Range • Low Phase Noise • Low Harmonics 400 MHz - 4 GHz Vtune Vdc Kvco (MHz/V) (typ) Output Power (dBm) (typ) PN @10kHz (dBc/Hz)

MOROCCO B 108 B

Contextual Info: r=7 SGS-1H0MS0N SD1460 * 7# . M »ilL§O T M []@ § RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS « . . . . • 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION P o u t = 150 W MIN. WITH 9.2 GAIN dB PIN CONNECTION a 1 (of jO 4 DESCRIPTION

fs1020

Abstract: DFS2040 DFS80180 DFS20180 DFS4080 92SF UFS2040 mfs1020 dfs20 s0540
Contextual Info: Frequency Synthesizer Product Catolog The content of this specification may change without notification 1/28/10 Coaxial Low Phase Noise Frequency Synthesizer 1 to 18GHz Low Phase Noise Frequency Synthesizers Freq. Step Power 2 Output Range Size GHz (MHz)

Contextual Info: NXP LDMOS RF power transistor BLF578 LDMOS RF power transistor delivering 1000 W of CW output power Delivering 1000 W of CW output power with 26 dB of gain and 75% efficiency, this rugged LDMOS device is ideally suited for use in broadcast transmitters and industrial, scientific and