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STMicroelectronics STP35N60DM2 MOSFET N-CH 600V 28A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STP35N60DM2	Tube	988		1	1 $4.67 10 $4.67 100 $2.19 1000 $1.68 10000 $1.67	Buy Now
Avnet Americas	STP35N60DM2	Tube		16 Weeks	1,000	1 - 10 - 100 - 1000 $1.91 10000 $1.70	Buy Now
Mouser Electronics	STP35N60DM2					1 $4.67 10 $2.41 100 $2.19 1000 $1.68 10000 $1.68	Get Quote
Newark	STP35N60DM2	Bulk	945		1	1 $4.86 10 $3.97 100 $3.40 1000 $3.13 10000 $3.13	Buy Now
STMicroelectronics	STP35N60DM2				1	1 $4.58 10 $2.36 100 $2.15 1000 $1.77 10000 $1.77	Buy Now

TME	STP35N60DM2				1	1 $4.65 10 $3.88 100 $3.48 1000 $3.25 10000 $3.25	Get Quote
Avnet Silica	STP35N60DM2		1,000	17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STP35N60DM2			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STF35N60DM2 MOSFET N-CH 600V 28A TO220FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STF35N60DM2	Tube	906		1	1 $3.37 10 $3.37 100 $2.45 1000 $2.23 10000 $2.23	Buy Now
Avnet Americas	STF35N60DM2	Bulk		16 Weeks	1,000	1 - 10 - 100 - 1000 $2.55 10000 $2.23	Buy Now
Mouser Electronics	STF35N60DM2		646			1 $3.29 10 $2.45 100 $2.42 1000 $2.22 10000 $2.22	Buy Now
Newark	STF35N60DM2	Bulk			1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics	STF35N60DM2		656		1	1 $3.22 10 $2.40 100 $2.37 1000 $2.27 10000 $2.27	Buy Now

TME	STF35N60DM2				1	1 $4.16 10 $4.16 100 $4.16 1000 $4.16 10000 $4.16	Get Quote
Avnet Silica	STF35N60DM2		1,000	17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STF35N60DM2			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SIHP35N60EF-GE3 MOSFET N-CH 600V 32A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHP35N60EF-GE3	Tube	210		1	1 $6.28 10 $6.28 100 $3.39 1000 $2.83 10000 $2.83	Buy Now
Vishay Siliconix SIHP35N60E-BE3 N-CHANNEL 600V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHP35N60E-BE3	Tube	119		1	1 $6.72 10 $4.53 100 $3.29 1000 $3.29 10000 $3.29	Buy Now
Infineon Technologies AG SPW35N60C3FKSA1 MOSFET N-CH 650V 34.6A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPW35N60C3FKSA1	Tube	63		1	1 $9.39 10 $9.39 100 $5.23 1000 $4.48 10000 $4.48	Buy Now
Avnet Americas	SPW35N60C3FKSA1	Tube		15 Weeks	240	1 - 10 - 100 - 1000 $4.25 10000 $4.10	Buy Now
Mouser Electronics	SPW35N60C3FKSA1		34			1 $9.53 10 $9.51 100 $4.87 1000 $4.48 10000 $4.48	Buy Now
Newark	SPW35N60C3FKSA1	Bulk	173		1	1 $9.21 10 $9.17 100 $4.90 1000 $4.54 10000 $4.54	Buy Now
Rochester Electronics	SPW35N60C3FKSA1		94		1	1 - 10 - 100 $4.48 1000 $4.01 10000 $3.78	Buy Now

Chip Stock	SPW35N60C3FKSA1		23,723			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SPW35N60C3FKSA1			16 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	SPW35N60C3FKSA1		19,923			1 - 10 $7.73 100 $5.15 1000 $5.15 10000 $5.15	Buy Now

Find more 35N60 price and stock on Findchips.com

35N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IXKH 35N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD D G G D S S D(TAB) Features MOSFET Conditions VDSS TVJ = 25°C	Original	35N60C5 O-247	PDF
Contextual Info: IXKH 35N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS TVJ = 25°C	Original	35N60C5 O-247 20070625a	PDF
35n60c Abstract: ixkp35n60c5m Contextual Info: IXKP 35N60C5M ID25 = 11.5 A VDSS = 600 V RDS on max = 0.1 Ω COOLMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions	Original	35N60C5M O-220 20080310a 35n60c ixkp35n60c5m	PDF
IXKH35N60C5 Contextual Info: IXKH 35N60C5 COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	35N60C5 O-247 20090209c IXKH35N60C5	PDF
DSA003710 Contextual Info: IXKH 35N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS TVJ = 25°C	Original	35N60C5 O-247 20070625a DSA003710	PDF
35n60 Abstract: IXKH35N60C5 35n60c MOSFET IXYS TO-220 35n60c5 IXKP35N60C5 MOS-FET 1307 L-120 AB Contextual Info: IXKH 35N60C5 IXKP 35N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 35 A VDSS = 600 V RDS on) max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)	Original	35N60C5 O-247 O-220 20080523a 35n60 IXKH35N60C5 35n60c MOSFET IXYS TO-220 35n60c5 IXKP35N60C5 MOS-FET 1307 L-120 AB	PDF
35N60 Abstract: 35N60BD1 Contextual Info: IXDR 35N60 BD1 VCES = 600 V = 38 A IC25 VCE sat typ = 2.2 V IGBT with optional Diode High Speed, Low Saturation Voltage ISOPLUS 247TM C G G C E E G = Gate, C = Collector , Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V VCGR TJ = 25°C to 150°C; RGE = 20 kΩ	Original	35N60 247TM IXDR30N60BD1 35N60BD1	PDF
Contextual Info: IXDP 35N60 B VCES = 600 V IXDH 35N60 B IC25 = 60 A IXDH 35N60 BD1 VCE sat typ = 2.1 V IGBT with optional Diode High Speed, Low Saturation Voltage C C G TO-247 AD IXDH . G E G C E C (TAB) E IXDH 35N60 B IXDP 35N60 B Symbol Conditions IXDH 35N60 BD1 Maximum Ratings	Original	35N60 O-247 O-220 IXDH30N60B	PDF
Contextual Info: IXKH 35N60C5 IXKP 35N60C5 Advanced Technical Information ID25 = 35 A = 600 V VDSS RDS on max = 0.1 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP) G	Original	35N60C5 35N60C5 O-247 O-220	PDF
diode B4 Abstract: ixdn75n120 STO-227 IGBT D-Series 20n60 IXDH20N120AU1 20N60B 30N120 55N120 30N120D1 Contextual Info: SCSOA NPT IGBT D-Series Contents IGBT VCES IC max VCE sat TO-263 max TO-247 TC = 25°C TC = 25°C V A V 600 32 60 2.8 2.7 ➤ IXDP 20N60 B ➤ IXDP 35N60 B 34 38 60 100 150 3.4 3.0 2.9 2.8 2.7 IXDA 20N120 AS 1200 TO-268 STO-227 Page TO-220 B4 - 2 B4 - 4 ➤ IXDH 35N60 B	Original	O-263 O-247 O-268 STO-227 O-220 20N60 35N60 20N120 20N120 diode B4 ixdn75n120 STO-227 IGBT D-Series IXDH20N120AU1 20N60B 30N120 55N120 30N120D1	PDF
IXBH 40N160 Abstract: 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1 Contextual Info: NPT Insulated Gate Bipolar Transistors IGBT D series (SCSOA) V T = 1 5 0 °C ► New V ► IXDP 20N60B 600 v CE(aal) c lM typ. typ. Tc - 25°C Tc = 90°C A A ► IXDP 35N60B ► IXDH 35N60B ► IXDA 20N120A 'c •c CES PF 21 2.0 800 58 40 2.0 ^ 1600 □	OCR Scan	20N60B 35N60B 20N120A 20N120 30N120 75N120A T0-220 9N140 9N160 IXBH 40N160 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1	PDF
35n60 Abstract: 35N60 datasheet 35N60BD1 IXDH30N60 IXDH30N60B Contextual Info: IXDP 35N60 B VCES = 600 V = 60 A IXDH 35N60 B IC25 IXDH 35N60 BD1 VCE sat typ = 2.1 V IGBT with optional Diode High Speed, Low Saturation Voltage C C G TO-247 AD IXDH . G E G C E C (TAB) E IXDH 35N60 B IXDP 35N60 B IXDH 35N60 BD1 Symbol Conditions Maximum Ratings	Original	35N60 O-247 IXDH30N60B 35N60 datasheet 35N60BD1 IXDH30N60 IXDH30N60B	PDF
Contextual Info: IGBT with optional Diode IXDP 35N60 B VCES = 600 V = 60 A IXDH 35N60 B IC25 IXDH 35N60 BD1 VCE sat typ = 2.1 V High Speed, Low Saturation Voltage C G Preliminary Data TO-247 AD C G E G C E IXDH 35N60 B BD1 IXDP 35N60 B IXDH 35N60 Symbol Conditions VCES TJ = 25°C to 150°C	Original	35N60 O-247 35N60 O-220	PDF
Contextual Info: IXKH 35N60C5 COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D ﬂ D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	35N60C5 O-247 20090209c	PDF

30N120D1 Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1 Contextual Info: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120	OCR Scan	O-268 35-06C 40-06D OT-227B 50-12E 50-12BD 30N120D1 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1	PDF
35N60 Contextual Info: IXDR 35N60 BD1 VCES = 600 V = 38 A IC25 VCE sat typ = 2.2 V IGBT with optional Diode High Speed, Low Saturation Voltage ISOPLUS 247TM C G G C E E Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 20 kW 600	Original	35N60 247TM IXDR30N60BD1	PDF
Contextual Info: IXKH 35N60C5 COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	35N60C5 O-247 20080310b	PDF
Contextual Info: IXDR 35N60 BD1 VCES = 600 V IC25 = 38 A VCE sat typ = 2.2 V IGBT with optional Diode High Speed, Low Saturation Voltage ISOPLUS 247TM C G G C E E G = Gate, C = Collector , Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V Features ● ● VCGR TJ = 25°C to 150°C; RGE = 20 kΩ	Original	35N60 247TM IXDR30N60BD1	PDF
35N60 Abstract: 30N120 75N120 ixys ixdn 75 n 120 20n60 IXDN75N120 IXDH30N60 55N120 20N60 to220 ixdn55n Contextual Info: Discrete NPT IGBTs Contents NPT IGBT VCES IC max VCE sat TO-263 (.AS) typ. TC = 25°C TC = 25°C V A V 600 32 60 2.2 2.1 IXDP 20N60 B IXDP 35N60 B 34 38 50 60 100 150 2.8 2.4 2.4 2.4 2.3 2.2 IXDA 20N120 AS 1200 TO-247 TO-268 Page STO-227 ISOPLUS 247TM TO-220	Original	O-263 O-247 20N60 35N60 STO-227 O-268 247TM O-220 20N120 30N120 75N120 ixys ixdn 75 n 120 IXDN75N120 IXDH30N60 55N120 20N60 to220 ixdn55n	PDF
Contextual Info: 35N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited	Original	NGTB35N60FL2WG NGTB35N60FL2W/D	PDF
35n60c3 Abstract: 35n60 D219 Q67040-S4673 SPW35N60C3 D219A P-TO247 35n60c Contextual Info: 35N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.1 Ω ID 34.6 A • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances	Original	SPW35N60C3 P-TO247 Q67040-S4673 35N60C3 35n60c3 35n60 D219 Q67040-S4673 SPW35N60C3 D219A P-TO247 35n60c	PDF
35N60CFD Abstract: SPW35N60CFD JESD22 Q67045A5053 D219 Contextual Info: 35N60CFD CoolMOSTM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.118 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 34 A • Extremely low reverse recovery charge • Ultra low gate charge	Original	SPW35N60CFD PG-TO247 Q67045A5053 35N60CFD 009-134-A PG-TO247-3-21-41 35N60CFD SPW35N60CFD JESD22 Q67045A5053 D219	PDF
35N60CFD Abstract: SPW35N60CFD 35n60 JESD22 Q67045A5053 D341 transistor Contextual Info: 35N60CFD CoolMOS TM Power Transistor Product Summary Features V DS • New revolutionary high voltage technology 600 0.118 Ω R DS on ,max • Intrinsic fast-recovery body diode V ID 34 A • Extremely low reverse recovery charge • Ultra low gate charge	Original	SPW35N60CFD PG-TO247 Q67045A5053 35N60CFD 35N60CFD SPW35N60CFD 35n60 JESD22 Q67045A5053 D341 transistor	PDF
35n60c3 Abstract: SPW35N60C3 D219 D219A Q67040-S4673 35N60 Contextual Info: 35N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.1 Ω ID 34.6 A • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances	Original	SPW35N60C3 PG-TO247 Q67040-S4673 35N60C3 009-134-A O-247 35n60c3 SPW35N60C3 D219 D219A Q67040-S4673 35N60	PDF

35N60 Search Results

35N60 Price and Stock

STMicroelectronics STP35N60DM2

STMicroelectronics STF35N60DM2

Vishay Siliconix SIHP35N60EF-GE3

Vishay Siliconix SIHP35N60E-BE3

Infineon Technologies AG SPW35N60C3FKSA1

35N60 Datasheets Context Search

35n60c

IXKH35N60C5

DSA003710

35n60

35N60

diode B4

IXBH 40N160

35n60

30N120D1

35N60

35N60

35n60c3

35N60CFD

35N60CFD

35n60c3